• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.253-253
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• 2013

본 실험에서는 전구체(Precursor)로 TMA (Tris methyl Aluminum)를 사용한 ALD (Atomic Layer Deposition)와 PEALD (Plasma Enhanced Atomic Layer Deposition) 공정 중 발생하는 입자(particle)를 ISPM (In-Situ Particle Mornitor)로 관찰하였다. ALD과 PEALD 공정에서 Al2O3 박막을 형성하기 위해서 반응가스(Reactant)로 각 각 H2O와 O2 plasma를 사용하였다. 이러한 차이로 인해서 진공 챔버(Vacuum Chamber) 안에서의 각기 다른 매커니즘에 의해서 Al2O3의 박막이 형성된다. 또한 공정 중 발생할 수 있는 파티클(Particle) 생성 매커니즘의 차이점을 가진다. ALD의 경우 전구체와 반응가스 사이에 충분한 purge가 이루어지지 않거나 dead zone이 존재할 경우 라인과 챔버 상에 잔류한 전구체와 반응가스에 의해서 불완전한 반응물로 파티클이 생성될 수 있다. 반면 PEALD 경우는 반응가스(Reactant)로 O2 plasma를 극부(localization)적으로 형성하여 박막을 형성하므로 반응가스의 잔류의 영향은 없으나 고에너지의 플라즈마에 의해서 물리적 영향에 의한 파티클이 생성될 수 있다. 공정 중 발생하는 입자(Particle)은 수율 감소와 박막의 물성에 영향을 미칠 수 있다. 그러므로 두 공정 중 발생하는 파티클을 ISPM으로 관찰하였고, 각 공정에서 형성된 박막의 두께 균일도, 표면의 형상(morphology), 화학적 조성 및 전기적 특성을 측정하였다. 이를 통해서 ALD와 PEALD의 파티클과 박막특성을 비교하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.155.2-155.2
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• 2014

Plasma Enhanced Atomic Layer Deposition(PEALD)와 Atomic Layer Deposition(ALD) Techniques는 '정확한 두께 조절' 및 '우수한 균일도'를 가지는 신뢰할 수 있는 진공 기술이다. 본 연구에서는 다공성 구조를 가지는 기판을 대상으로 PEALD와 ALD Techniques을 이용한 $Al_2O_3$ 형성 공정의 증착 특성을 비교하였다. 각 공정은 공통적으로 Tris-Methyl-Aluminium(TMA)을 첫번째 전구체로 사용하였고 purge gas로는 Nitrogen를 사용하였다. 그리고 두번째 전구체로 PEALD 공정에서는 Oxygen Plasma를 사용하였고 ALD 공정에서는 Water를 사용하였다. 복잡한 다공성 구조를 가지는 기판은 $TiO_2$ Nano-Particle paste과 colloidal Silver paste를 소결시켜 제작하여 사용하였다. 각 공정의 차이점을 비교하기 위해서 배기단에 Capacitor Diaphram Gauge(CDG)와 Residual Gas Analyzer(RGA)를 통해서 압력과 잔류 가스를 모니터하였다. 그리고 각 공정을 통해서 porous한 Nano-Particles Network에 형성된 $Al_2O_3$막의 특성을 비교하기 위해서 FE-SEM과 EDX를 통해서 관찰하였다. 또한 좀 더 자세한 비교 분석을 위해서 $Al_2O_3$ 막이 형성된 porous한 Nano-Particles Networks의 각 각의 particles들을 분산시켜 TEM과 AFM를 통해서 관찰하였다. 나아가 전기적 물성의 차이점을 비교하기 위해서 IV 및 CV를 측정하였다. 위의 일련의 비교 실험을 통해서 'PEALD과 ALD을 이용한 다공성 기판의 증착 특성'에 대하여 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.851-852
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• 2010

• Journal of Powder Materials
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• v.20 no.1
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.125-128
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• 2023

Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO₂ used as a gate oxide have occurred. In order to overcome the limitation of SiO₂, many studies have been conducted on HfO₂ that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO₂, and has an appropriate band gap. In this study, HfO₂, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO₂ thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.