• Title/Summary/Keyword: PD and FD

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Relationship between Diversity and Productivity at Ratargul Fresh Water Swamp Forest in Bangladesh

  • Sharmin, Mahmuda;Dey, Sunanda;Chowdhury, Sangita
    • Journal of Forest and Environmental Science
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    • v.32 no.3
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    • pp.291-301
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    • 2016
  • One of the most concerned topics in ecology is the relationship between biodiversity and ecosystem functioning. However, there are few field studies, carried out in forests, although many studies have been done in controlled experiments in grasslands. In this paper, we describe the relationship pattern between three facets of diversity and productivity at Ratargul Fresh Water Swamp Forest (RFWSF) in Bangladesh, which is the only remaining fresh water swamp forest of the country. Sixty sample plots were selected from RFWSF and included six functional traits including leaf area (LA), specific leaf area (SLA), leaf dry matter content (LDMC), tree height, bark thickness and wood density. In analyzing TD, we used Shannon diversity and richness indices, functional diversity was measured by Rao's quadratic entropy (Rao 1982) and Faith's (1992) index was used for phylogenetic diversity (PD). It was found that, TD, FD and PD were positively related with productivity (basal area) due to resource use complementarity but surprisingly the best predictor of tree productivity was FD. The results contribute to the understanding the effects of biodiversity loss and it is essential for conservation decision-making and policy-making of Ratargul Fresh Water Swamp Forest.

3.125Gbps Reference-less Clock/Data Recovery using 4X Oversampling (레퍼런스 클록이 없는 3.125Gbps 4X 오버샘플링 클록/데이터 복원 회로)

  • Lee, Sung-Sop;Kang, Jin-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.10 s.352
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    • pp.28-33
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    • 2006
  • An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

Two Anhydrous Zeolite X Crystal Structures, $Pd_{18}Ti_{56}Si_{100}Al_{92}O_{384} and Pd_{21}Tl_{50}Si_{100}Al_{92}O_{384}$

  • Yun, Bo Yeong;Song, Mi Gyeong;Lee, Seok Hui;Kim, Yang
    • Bulletin of the Korean Chemical Society
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    • v.22 no.1
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    • pp.30-36
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    • 2001
  • The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

A SiGe HBT of Current Gain Modulation By using Passivation Ledge (Passivation Ledge를 이용한 SiGe HBT의 Current Gain Modulation)

  • You, Byoung-Sung;Cho, Hee-Yup;Ku, Youn-Seo;Ahn, Chul
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.771-774
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    • 2003
  • Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ>0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

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