Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A SiGe HBT of Current Gain Modulation By using Passivation Ledge

Passivation Ledge를 이용한 SiGe HBT의 Current Gain Modulation

  • You, Byoung-Sung (Sogang University Electronic Engineering Department) ;
  • Cho, Hee-Yup (Sogang University Electronic Engineering Department) ;
  • Ku, Youn-Seo (Sogeong University Electronic Engineering Department) ;
  • Ahn, Chul (Sogang University Electronic Engineering Department)
  • 유병성 (서강대학교 전자공학과) ;
  • 조희엽 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2003.07.01
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Abstract

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

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