• 제목/요약/키워드: PCVD

검색결과 15건 처리시간 0.021초

돼지 써코바이러스 2형 국내분리주의 유전학적 특성 규명 (Genetic characterization and phylogenetic analysis of porcine circovirus type 2 field strains isolated from Korean pocine circovirus disease (PCVD) pigs)

  • 김문;한정희
    • 한국동물위생학회지
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    • 제32권1호
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    • pp.1-10
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    • 2009
  • In order to obtain the genetic information of the Korean isolates of porcine circovirus 2 (PCV2), complete genomes of five isolates from Korean PCVD weaned pigs with wasting syndromes were sequenced and compared with those of other published PCV2 isolates. Of the five PCV2 isolates, four (1767 nucleotides) were classified into PCV2b, and one (1,768 nucleotides) was PCV2a. Moreover, it appeared that PCV2b is now the dominant genotype circulating in Korea herds. Total complete genomes of four PCV2b isolates shared $99.1{\sim}99.4%$ nucleotide sequence homology each other, and were only $95.4{\sim}96.2%$ similar to one PCV2a isolate. ORF2 genome of four PCV2b isolates shared over 99% nucleotide sequence and deduced amino acid sequence identity to each other. Nevertheless, those were much divergent with the PCV2a isolate of this study and ranged from $92.3{\sim}92.7%$ nucleotide homology and $91.9{\sim}92.3%$ deduced amino acid sequence homology, respectively. The amino acid sequence alignments of the putative capsid protein identified three major regions of amino acid heterogeneity at residues $59{\sim}91$, $121{\sim}136$ and $190{\sim}210$. Two of those correspond with dominant immunoreactive areas. Phylogenetic analysis based on the complete genome of PCV2 isolates showed that four PCV2b isolates of this study existed the closest relationship with European strains (Netherland, UK and France). One PCV2a isolate was closely related to Japan and North America strains.

PCVD법에 의한 a-C:H 및 a-CN:H 박막의 특성 평가에 관한 연구 (A Study on Properties of Hydrogenated a-C and a-CN thin films Prepared by Plasma Chemical Vapor Deposition)

  • 김대욱;이경황;박종원;박광수
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.110-111
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    • 2011
  • 비정질 탄소계 박막은 높은 경도, 내마모성, 내화학성 및 전기저항특성을 갖는 박막으로 다양한 산업분야에 응용 및 적용 연구가 진행되고 있다. 특히, 탄소계 박막은 자동차 및 기계 산업분야에 있어서 우수한 물리적 특성인 고경도 및 저마찰 특성을 이용한 금속 표면의 기능성 부여를 목적으로 활발하게 연구가 이루어지고 있다. 본 연구는 사출금형 표면의 고경도 저마찰화를 목적으로 비정질 탄소계 박막을 사출금형 소재 (KP4)에 제작하고, 이들 코팅막에 대한 경도, 밀착력, 마찰계수 등의 물리적 특성을 평가하였다. 또한, 탄소계 코팅막 제작 공정 조건이 코팅막의 물리적 특성에 미치는 영향에 대하여 고찰하였다.

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펄스 SiH4 플라즈마 화학기상증착 공정에서 입자 성장에 대한 펄스 변조의 영향 (Effects of Pulse Modulations on Particle Growth m Pulsed SiH4 Plasma Chemical Vapor Deposition Process)

  • 김동주;김교선
    • 산업기술연구
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    • 제26권B호
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    • pp.173-181
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    • 2006
  • We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

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STD61 강의 내열특성향상을 위한 표면경화에 관한 연구 (A Study in the Heat Resistance Properties of STD61 Steel using the Surface Hardening Method)

  • 이구현
    • 연구논문집
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    • 통권26호
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    • pp.121-132
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    • 1996
  • The carburising surface modification treatment of the die steel has been used for improving wear resistance and heat cycle strength of the die and preventing a pitting on the surface because the carbides are forming in the matrix during carburising. Generally, the hot forging die was used after quenching-tempering treatment or nitriding after quenching-tempering treatment. The nitriding after carburising on the surface of a hot die steel and a wear resistance die steels was suggested by SOUCHARD, JACQUOT. and BUVRON. This surface modification treatment improved the adhesive and abrasive wear resistance and friction coefficient. The process was introduced to the forging die of stainless steel, titanium alloy steel, alloy and medium carbon steel and the physical properties of the die after the treatment were improved. The surface hardening treatment of the nitriding, the carburising, the boriding, and TD process were used to improved the life time of the forging die. Also, the coating process of PVD, CVD and PCVD were used and the hard chromium plating was occasionally used. Therefore, this study analyzed the effects of the carburising time and the conditions of nitriding on STD61 steel. The case depth, the surface hardness, the forming carbide size and shape during overcarburising process on the die steel were also examined.

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Gas phase diagnostics of high-density $SiH_4/H_2$ microwave plasma

  • Toyoda, Hirotaka;Kuroda, Toshiyuki;Ikeda, Masahira;Sakai, Junji;Ito, Yuki;Ishijima, Tatsuo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.94-94
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    • 2010
  • As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

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