• Laser Solutions
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• v.15 no.3
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• pp.7-10
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• 2012

Dimensions (line/space) of circuits in IC substrates for high-end chips (e.g. CPU, etc.) are anticipated to decrease as small as $10{\mu}m/10{\mu}m$ in 2014. Since current etch-based circuit-patterning processes are not able to address the urgent requirement from industry, laser-based circuit patterning processes are under active research in which UV laser is used to engrave embedded circuits patterns into IC substrates. In this paper, we used a nanosecond UV laser to directly fabricate embedded circuit patterns into IC substrates with/without ceramic powders. In experiments, we engraved embedded circuit patterns with dimensions (width/depth) of abut $10{\mu}m/10{\mu}m$ and $6{\mu}m/6{\mu}m$ into the IC substrates. Due to the recoil pressure occurring during ablation, the circuit patterning of the IC substrates with ceramic powders showed the higher ablation rate.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• ETRI Journal
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• v.35 no.4
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• pp.625-631
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• 2013

For the formation of solder bumps with a fine pitch of 130 ${\mu}m$ on a printed circuit board substrate, low-volume solder on pad (LVSoP) technology using a maskless method is developed for SAC305 solder with a high melting temperature of $220^{\circ}C$. The solder bump maker (SBM) paste and its process are quantitatively optimized to obtain a uniform solder bump height, which is almost equal to the height of the solder resist. For an understanding of chemorheological phenomena of SBM paste, differential scanning calorimetry, viscosity measurement, and physical flowing of SBM paste are precisely characterized and observed during LVSoP processing. The average height of the solder bumps and their maximum and minimum values are 14.7 ${\mu}m$, 18.3 ${\mu}m$, and 12.0 ${\mu}m$, respectively. It is expected that maskless LVSoP technology can be effectively used for a fine-pitch interconnection of a Cu pillar in the semiconductor packaging field.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.15-22
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• 2013

Low-Temperature-cofired ceramics (LTCC) antenna packages have been extensively researched and utilized in recent years due to its excellent electrical properties and ease of implementing dense package integration topologies. This paper introduces some of the key research and development activities using LTCC packaging solutions for 60 GHz antennas at Samsung Electronics [1]. The LTCC 60 GHz antenna element topology is presented and its measured results are illustrated. However, despite its excellent performance, the high cost issues incurred with LTCC at millimeter wave (mmWave) frequencies for antenna packages remains one of the key impediments to mass market commercialization of mmWave antennas. To address this matter, for the first time to the author's best knowledge this paper alleviates the high cost of mmWave antenna packaging by devising a novel, broadband antenna package that is wholly based on low-cost, high volume FR4 Printed Circuit Board (PCB). The electrical properties of the FR4 substrate are first characterized to examine its feasibility at 60 GHz. Afterwards a compact multi-layer antenna package which exhibits more than 9 GHz measured bandwidth ($S_{11}{\leq}-10$ dB) from 57~66 GHz is devised. The measured normalized far-field radiation patterns and radiation efficiency are also presented and discussed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.1
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• pp.114-122
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• 2014

This paper describes a study of the design conditions of a planar surface dielectric barrier discharge (DBD) reactors for generating negative air ions. The capacity of negative air ion generated by the surface DBD reactor is affected by the shape, area ratio and the location of the discharge and induction electrodes of it. To study the optimal design conditions of DBD reactors, the electrodes printed on the substrate of a PCB board is utilized to conduct kind of experiments: the distance of the each electrode along with the X-Y axis, the area ratio of the discharge electrode to induction electrode, and the symmetrical and asymmetrical location of two electrodes. The ion generation capacity is inverse proportional to the gap increases along with X-Y axis. And the optimum ion concentration generated by the ionizer was inspected when the electrodes area ratio was 3 and 5 times of the symmetrical and asymmetrical experimental condition respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.873-877
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• 2005

The burr of micro drilling and micro cutting on thin metal film is a major obstacle to mass production for micro PCB boards in micro technologies of personal computing and telecom explosion. As the burr affects on the assembling process, it is necessary to study continuously on control or elimination of the burr. In order to get higher valued products, it is also needed to competitive techniques with the high resolution. In this paper, we studied experimentally the burr generation that when it is processed on the copper foil by laser in micro-hole machining. Unlike mechanical machining the burr produced on substrate is a resultants of melt and re-solidification of a melten metal which was heated and treated by laser. And higher laser energy increases the size of burr. Therefor in micro-drilling with laser, it is difficult to reduce the effects of burr for very thin metal sheets. We investigated the stale of the burr and analyzed the laser ablation Cu micro machining with respect to laser intensity and processing time.

• Journal of Advanced Navigation Technology
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• v.20 no.4
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• pp.344-351
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• 2016

In the present study, a dual-band multiple-input-multiple-output (MIMO) antenna covering WLAN frequency bands of 2.4 GHz (2.4 ~ 2.484 GHz) and 5 GHz (5.15 ~ 5.825 GHz) is newly presented to avoid use of decoupling structure for increasing isolation. The antenna consists of two L-shaped slots with n-shaped slots etched on the floating ground plane surrounded by open ended L-shaped slots which are placed in the left and right corner of PCB respectively. The proposed antenna is designed and fabricated on one side of FR4 substrate with dielectric constant of 4.3, thickness of 1.6 mm, and size of $50{\times}50mm2$. It has been observed that the measured impedance bandwidths ($S_{11}{\leq}-10dB$) are 0.3 GHz (2.28 ~ 2.58 GHz) in 2.4 GHz frequency band and 0.89 GHz (5.11 ~ 6 GHz) in 5 GHz frequency band respectively. In addition, It has been observed that the whole efficiency are more than 80 % in the whole operating frequency band and envelope correlation coefficient of the antenna is less than 0.05 as a very small value in spite of nothing of the decoupling structure.

• Journal of Navigation and Port Research
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• v.31 no.6
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• pp.503-507
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• 2007

In this paper, the ultra-widebend, microstrip patch antenna with the bandwidth of 3 GHz was implemented for ultra-wideband(UWB) wireless communication applications. In order to cover the very wide bandwidth of 3 GHz, a multi-resonance antenna was designed, each resonance frequency was separated into five frequency bend, 7.5, 8.1, 8.7, 9.3, and 9.9GHz with the interval of 600MHz BW. And for wideband characteristics of each antenna, U-slot antennas were designed at each center frequency. Designed five U-slot antennas were connected in series for multi-resonance of 3GHz BW and wideband matching was also designed for impedance matching transmission line calculated. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\epsilon}_r=4.8,\;h=0.6$ and loss tangent=0.0009 respectively. The implemented antenna's radiation patterns and gain were directivity characteristics and $1.46{\sim}4.08dBi$ at the five separated center frequency.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.