• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.650-652
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• 2002

In this paper, specimens was manufactured in general method annexing PAN-PZT+0.8wt%Mn+1wt% Nb ceramics doped by Sr(0.0 ~ 1.2 wt%). and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the rombohedral structure and consequently the specimen characterized by MPB was manufactured. According to dopping with Sr, electromechanical factor(kp) little is changed. kp was maximum value 31.31[%] at Sr 1.2[wt%]. mechanical quality factor(Qm) was maximum value 371.879 at Sr 0.6[wt%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.147-151
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• 2002

액정표시장치(LCD; Liquid Crystal Display)는 표현된 정보를 가시화하기 위해 램프의 백라이트가 필수적인데 대부분 부피가 작고 효율과 휘도특성이 좋은 냉음극 방전램프가 사용된다. 램프는 고압으로 구동되며 높은 전압을 얻기 위해 일반적으로 권선 변압기를 사용한다 그러나 권선 변압기의 경우 자체의 철심이나 권선의 손실로 인하여 출력 효율의 한계가 있으며, 고압을 위해 감긴 코일은 부피를 크게 하며 무겁게 만든다. 이를 해결하기 위해 본 논문에서는 변압기 자체 손실을 줄이고 소형화가 가능하며 높은 승압비을 가진 PAN-PZT계의 적층형 압전 변압기를 제작하였으며, 회로의 손실을 줄이기 위한 영전압 스위칭(ZVS; Zero Voltage Switching)과 그리고 LCD패널과 인버터의 불필요한 간섭현상(EMI; Electro-Magnetic Interference)을 줄일 수 있으며 소형화가 가능한 풀 브리지형 압전 인버터를 설계하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.795-800
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• 2003

The dielectric and piezoelectric properties of the xPb(A $l_{0.5}$N $b_{0.5}$) $O_3$-(1-x)Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$ [xPAN-(1-x)PZT] thin films by pulsed laser deposition (PLD) were investigated as a function of PAN contents. The effect of texture on dielectric and piezoelectric properties of the 0.05PAN-0.95PZT thin films having the highest piezoelectric constant( $d_{33}$) was studied more precisely. For 0$\leq$x$\leq$0.15 compositions in xPAN-(1-x)PZT thin films, the well-developed perovskite phase with (111) preferred orientation was obtained at the deposition temperature of 50$0^{\circ}C$. With increasing PAN content, remanent polarization and coercive field decreased. The dielectric constant increased with an increase of PAN content until it reached 1450 at $\chi$= 0.05, and then decreased for higher PAN content. The maximum points of dielectric constant coincides with the maximum points of the piezoelectric constant $d_{33}$.33/.33/././.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.194-196
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• 2002

액정표시장치(LCD; Liquid Crystal Display)는 표현된 정보를 가시화하기 위해 램프의 백라이트가 필수적인데 대부분 부피가 작고 효율과 휘도특성이 좋은 냉음극 방전램프가 사용된다. 램프는 고압으로 구동되며 높은 전압을 얻기 위해 일반적으로 권선 변압기를 사용한다. 그러나 권선 변압기의 경우 자체의 철심이나 권선의 손실로 인하여 출력 효율의 한계가 있으며, 고압을 위해 감긴 코일은 부피를 크게 하며 무겁게 만든다 이를 해결하기 위해 변압기 자체 손실을 줄이고 소형화가 가능하며 높은 승압비을 가진 PAN-PZT계의 적층형 압전 변압기를 제작하였다. 또한 회로의 손실을 줄이기 위한 영전압 스위칭(ZVS; Zero Voltage Switching)과 그리고 LCD패널과 인버터의 불필요한 간섭현상(EMI; Electro-Magnetic Interference)을 줄일 수 있으며 소형화가 가능한 하프 브리지형 압전 인버터를 설계하였다.

• Journal of Powder Materials
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• v.23 no.2
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• pp.112-119
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• 2016

A powder injection molding process is developed and optimized for piezoelectric PAN-PZT ceramics. Torque rheometer experiments are conducted to determine the optimal solids loading, and the rheological property of the feedstock is evaluated using a capillary rheometer. Appropriate debinding conditions are chosen using a thermal gravity analyzer, and the debound specimens are sintered using sintering conditions determined in a preliminary investigation. Piezoelectric performance measures, including the piezoelectric charge constant and dielectric constant, are measured to verify the developed process. The average values of the measured piezoelectric charge constant and dielectric constant are 455 pC/N and 1904, respectively. Powder injection molded piezoelectric ceramics produced by the optimized process show adequate piezoelectric performance compared to press-sintered piezoelectric ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.65.1-65.1
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• 2000

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1661-1663
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• 2000

This study was to measure the dielectric characteristics of 0.05Pb($Al_{0.5}Nb_{0.5}$)-0.95Pb($Zr_{0.52}Ti_{0.48})O_3$[PAN-PZT] system ceramics according to the variation of $Cr_{2}O_3$, $Fe_{2}O_3$ addition amount. 0.0$\sim$1.2[wt%] and according to sintering temperature after creating the specimens with a general sintering way. The results of this study were summarized as follows : the dielectric constant at 20[$^{\circ}C$] reduced dy increasing additive on the whole. The dielectric loss was minimum value of 12.77[%], sintered at 1200[$^{\circ}C$], dopped with $Cr_{2}O_3$ 0.3[wt%] and minimum value of 10.89[%], sintered at 1200[$^{\circ}C$], dopped with $Fe_{2}O_3$ 0.6[wt%]. The variation rate of dielectric constant according to the change of frequency was decreased slowly by increasing frequency. The temperature coefficient of capacitance turned out increasing the stability of the temperature, decreased $Cr_{2}O_3$ 0.3wt% showed its minimum value 0.59[%/$^{\circ}C$], the maximum value 0.9[%/$^{\circ}C$] with $Cr_{2}O_3$ 3wt%.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.