• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.719-725
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• 2019

We propose a 2.4-GHz CMOS power amplifier (PA) with a bypass structure to improve the power-added efficiency (PAE) in the low-power region. The primary winding of the output transformer is split into two parts. One of the primary windings is connected to the output of the power stage for high-power mode. The other primary winding is connected to the output of the driver stage for low-power mode. Operation of the high power mode is similar to conventional PAs. On the other hand, the output power of the driver stage becomes the output power of the overall PA in the low power mode. Owing to a turning-off of the power stage, the power consumption is decreased in low-power mode. We designed the CMOS PA using a 180-nm RFCMOS process. The measured maximum output power is 27.78 dBm with a PAE of 20.5%. At a measured output power of 16 dBm, the PAE is improved from 2.5% to 12.7%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.43-47
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• 2024

This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.

• Journal of electromagnetic engineering and science
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• v.9 no.1
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• pp.32-37
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• 2009

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.795-801
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• 2014

This paper presents an efficiency enhancement for the high power amplifier using DDBS(Digitally-controlled Dynamic Bias Switching) method which dynamically provides the power amplifier with two bias voltage levels according to the input envelope signal. It is quite easy to adjust the control signal by using a digital processing. The fabricated DDBS PA was evaluated using an 64 QAM FDD LTE signal, which has a center frequency of 2.6 GHz, a bandwidth of 10 MHz and a PAPR of 9.5 dB. The DDBS increases the power amplifier's PAE(Power-Added Efficiency) from 40.9 % to 48 %, at an average output power level of 43 dBm.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.802-809
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• 2001

A linear power amplifier for the VHF frequency-hopping(FH) transmitter using an adaptive predistortion linearizer is designed. An analog polynomial linearizer as predistorter is employed. The recursive least square(RLS) algorithm is employed in the optimization process to minimize the errors between the predistorter and postdistorter output signals. Experimental results show that the adjacent channel power of the designed power amplifier is reduced by of 10 dB.

• Journal of Positioning, Navigation, and Timing
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• v.10 no.3
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• pp.229-234
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• 2021

In this paper, a study was conducted on the power amplifier control required to design an eLoran transmitter system using a low-height antenna. The eLoran transmitter developed during the eLoran technology development project conducted in Korea used a small 35 m antenna due to the difficulty of securing a site for antenna installation. This antenna height is very low compared to the height of 750 m which is required for eLoran 100 kHz signal transmission without any radiation loss. In the case of using such a small antenna, not only the radiation efficiency of the transmission is lowered, but also the power module control must be performed more precisely in order to transmit the eLoran standard signal. The equivalent RLC circuit of the transmitter system was implemented and transient analysis was conducted to derive the input required voltage for satisfying the output requirement. The voltage waveform was also generated by the RLC circuit analysis to generate the eLoran signal. Furthermore, we suggest power width modulation method to control eLoran power amplifier module more sophisticatedly.