• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1381_1382
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• 2009

Nondestructive tests were performed on two 4.16kV motors. Epoxy-mica coupler(80pF) was connected to 4.16 kV motor stator windings. The voltage applied to the stator windings was 2.4 kV, 3.0kV, 3.5kV and 4.16kV, respectively. Digital partial discharge detector(PDD) and turbine generator analyzer(TGA) were used to measure partial discharge(PD) activity. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). The PD levels in pC were measured with PDD. PD patterns of stator windings were indicated the internal discharge. PD patterns are consistent with the result of measurement using PDD and TGA.

• Journal of Forest and Environmental Science
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• v.22 no.1
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• pp.71-75
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• 2006

Water relations of Kalopanax pictus leaves obtained from the P-V curve. In the upper leaves of Kalopanax pictus seedlings, the original osmotic pressure at maximum turgor was -1.44 MPa, and the osmotic pressure at incipient plasmolysis point was -1.84 MPa, and the relative water content at incipient plasmolysis point was 78.2%.

• Microbiology and Biotechnology Letters
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• v.17 no.3
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• pp.213-218
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• 1989

To investigate the possibility of using alkalophilic Bacillus sp. K-11 as a host for molecular cloning, plasmid pUB110 and pBD64 were introduced into alkalophilic Bacillus sp. K-17 by protoplast transformation system. Protoplasts of Bacillus sp. K-11 were prepared by treatment with 200 $\mu\textrm{g}$/$m\ell$ Iysozyme in SMM buffer containing 0.4M sucrose. Optimal temperature, pH and culture time for protoplast formation were 4$0^{\circ}C$, 7.0 and 4hrs, respectively. Cell wall was regenerated efficiently on DM3 medium containing 0.8% agar and 0.5M sodium succinate. Under these conditions for protoplast formation and regeneration, the highest transformation efficiency was obtained with cells incubated for 4hrs, and using 30%(V/V) of 40%(W/V) PEG6,000, In characteristics of transfer-mants, plasmid pUB110 was more stable than plasmid pBD64 in Bacillus sp. K-17. Maximum xylanase production of both transformants carrying pUB110 and pBD64, respectively was similar, but under the same conditions, enzyme secretion by transformant carrying pUB110 was earlier than that of transformant carrying pBD64.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• 한국해양학회지
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• v.26 no.1
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• pp.59-66
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• 1991

Laboratory studies were carried out to measure the sound velocity (V/SUB p/) and quality factor (Q/SUB p/, inverse attenuation) in the horizontal (H) and vertical (V) direction on the core sampled sediment of deep-sea basin (1,850 meter water depth), East Sea of Korea (Sea of Japan). Sampled core was about 250 cm long and 500 kHz ultrasonic p-wave transducer was used for a sound soured. V/SUB p/ varies from 1,480 m/sec to 1,500 m/sec, it is not clear which direction is faster, V/SUB PH/ or V/SUB pv/, within${\pm}$ 1.0% anisotropy (A/SUB p/). It is thought because the core sediment facies is highly (or slightly) bioturbated homogeneous mud with very high porosity (more than 80%). The general trend of Q/SUB p/ is decreasing 10 to 5 with the buried depth, it is strongly affected by the variation of sediment texture (increasing silt, decreasing clay) with increasing of CaCO$_3$ and organic matter content, But Q/SUB PH/ is jumping up to 14.9 near the bottom of core sediment as including volcanic ash richly. The relationship between V/SUB PH/ and Q/SUB PH/ shows the mirror image nearly, it is interpreted that not only the geotechnical properties and texture but also sea-water characteristics (high Q/SUB p/, low V/SUB p/) according to rich water content affect strongly in the upper part of the unconsolidated deep-sea basin sediment.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.255-262
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• 1994

Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.797-798
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• 2010