• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.127-129
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• 1994

For scale-down EEPROM, MONOS structures with the different thicknesses of gate insulators, are fabricated and the memory characteristics, such as swtching and retention characteristics are investigated. As a results, the devices with the top oxide of 20A thick were deteriorated in retentivity. However, 11V-programmable voltage for ΔV$\sub$FB/=4V and 10-year data retention were achieved in MONOS structure with the t7p oxide of 50 ${\AA}$ thick and nitride 45${\AA}$thick.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Journal of Astronomy and Space Sciences
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• v.30 no.2
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• pp.95-100
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• 2013

In this paper we examine a total of 16 dipolarization events that were observed by THEMIS spacecraft in space close to geosynchronous orbit, r < ${\sim}7\;R_E$. For the identified events, we examine the characteristics of the plasma flows and associated bubbles as defined based on $pV^{5/3}$, where p is the plasma pressure and V the volume of unit magnetic flux. First, we find that the flow speed in the near-geosynchronous region is very low, mostly within a few tens of km/s, except for a very few events for which the flow can rise up to ~200 km/s but only very near the dipolarization onset time. Second, the bubble parameter, $pV^{5/3}$, decreases by a much smaller factor after the dipolarization onset than for the events in the farther out tail region. We suggest that the magnetic dipolarization in the near-geosynchronous region generates or is associated with only very weak plasma bubbles. Such bubbles in the near-geosynchronous region would penetrate earthward only by a small distance before they stop at an equilibrium position or drift around the Earth.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.28-36
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• 1998

We have proposed a new non-inverting SOI buffer circuit for the high speed operation at low supply voltage. The body biases of main MOS devices in the proposed circuit are controlled dynamically via subsidiary MOS device connected efficiently to the body terminal. We showed current derivability of the body controlled devices obtained by device simulation and compared with that of conventional SOI devices. Delay time characteristics of the buffer circuit were analyzed by SPICE simulation and compared with those of conventional SOI CMOS buffer circuits. Delay time reduction of the SOI buffer over conventional SOI CMOS buffer with same area is about 36 % at $V_{S}$=1.2 V and $C_{L}$=2 pF. pF.

• Speech Sciences
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• v.5 no.2
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• pp.17-26
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• 1999

It has been claimed that Korean mid-vocalic voiceless unaspirated lax stops are phonetically realized with voicing throughout the oral closure phase. Acoustic measurements were undertaken to examine the claim with four Korean native speakers using /$V_1CV_2$/ words where the vowel ($V_1\;=\;V_2$) was /i, a, u/ and the C was voiceless unaspirated lax stops /p, t, k/. Findings: (1) During mid-vocalic stops /k/ and /p/ the vowel /u/ was accompanied generally by a significant increase in voice cessation time as percentage of the oral closure interval (PCT) than the vowel /a/, regardless of subjects, whereas in mid-vocalic alveolar stop /t/ the effects of vowels on PCT were subject-dependent, (2) The effects of vowels on PCT were significantly greater in mid-vocalic /k/ than /p/, regardless of subjects, (3) The mean PCT, averaged across six tokens, ranged from 17% to100%, giving overall mean 61% in which the standard deviation was ${\pm}30$, and (4) Overall % of the total of mid-vocalic unaspirated lax stops were produced with a substantial period of devocing and voicing lag. Considering these results, it is difficult to agree with the existing claims that Korean voiceless unaspirated lax stops are phonetically realized with voicing throughout the oral closure phase. Other phonetic variables, including the durations of pre/post-stop vowels, voice onset time, voice cessation time, and the duration of oral closure, were measured.

• Journal of Power Electronics
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• v.14 no.4
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• pp.722-732
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• 2014

The power-voltage (P-V) curve of photovoltaic (PV) arrays connected in parallel to bypass diodes would have several local maximum power points (LMPP) under partial shading conditions (PSC). Conventional maximum power point tracking (MPPT) methods fail to search for the global maximum power point (MPP) because the searched peak point may remain at the LMPP on the P-V curve under PSC. This study proposes an improved MPPT algorithm to ensure that PV arrays operate at global maximum power point (GMPP) under PSC. The proposed algorithm is based on a critical study and a series of observations of PV characteristics under PSC. Results show the regularity of voltage interval between LMPPs. The algorithm has the advantages of rapidly reaching GMPP, maintaining stability, and recovering GMPP quickly when the operating condition changes. Simulation and experimental results demonstrate the feasibility of the proposed algorithm.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2448-2453
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• 2008

The present study numerically investigates the flow and heat transfer characteristics of rib-induced secondary flow in a cooling channel with staggered V-shaped ribs, extruded on both walls. The rib-height-to-hydraulic diameter ration (h/$D_h$) is 0.17; the rib pitch-to-height ratio (p/h) equals 2.8; the Reynolds number is 50,000. Shear stress transport (SST) turbulence model is used as a turbulence closure. The present results are compared with those for a continuous V-shaped rib. Computational results show that, for average heat transfer rate the staggered V-shaped rib gives about 2.5 times higher values than the continuous V-shaped rib, while, for the streamwise pressure drop the former gives about 5 times higher values than the latter. Consequently, for the thermal performances, based on the equal pumping power condition, the staggered one gives about 2 times higher values than the continuous one. Also, for the staggered V-shaped rib, complex secondary flow patterns are generated in the duct due to the snaking flow in the streamwise direction, and more uniform heat transfer distributions are obtained.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.27 no.3
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• pp.292-298
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• 1994

An environmental study was done to examine the distribution of Vibrio mimicus in aquatic environments of Kwangan and Minrak beach, Pusan, Korea. Moreover, both bacteriological characteristics and lethal effects of isolated V. mimicus were observed. Sea water samples were collected monthly from January to September, 1993, and quantitatively analyzed for V. mimicus. This organism was isolated from April(water temperature was $16.3^{\circ}C$), whereas it was not isolated when the water temperature fell below $15^{\circ}C$. V. mimicus counts were not remarkably high, however this study at least describes the distribution and occurrence of the possible highest density in aquatic environments of this region. Among the confirmed V. mimicus strains, the author chose the strongest antibiotic resistant bacterium and named it V. mimicus K-1. This strain has antibiotic resistance to colistin, erythromycin, tetracycline, and penicillin, and most isolates had a higher level of antibiotic resistance than V. mimicus ATCC 33653. The optimum growth for V. mimicus K-1 was observed at $37^{\circ}C$, pH 7.5, and $1\%$ NaCl, respectively. This organism was mostly inactivated by Ultra Violet irradiation (30W, $50^{\circ}C$) for 70 seconds and death lethality increased in proportion to treatment temperature ($D_{50}=5.7min,\;D_{60}=\;2.1min,\;and\;D_{70}=0.7min$).