• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.682-684
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• 2003

본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널 길이는 0.9$\mu\textrm{m}$로 하였으며, 온도는 300K와 77K일 때의 특성을 조사하였다. 게이트 전압이 -1.5V로 인가되었을 때, 실온에서는 -0.97V의 문턱전압 값을 얻었으나 77K에서는 -1.15V의 문턱전압 값을 얻었다. 이것은 실온에서의 Si pMOSFET가 갖는 문턱전압 값(-1.36V)보다 동작특성이 우수함을 알 수 있었다.

• 한국정보통신학회논문지
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• 제7권3호
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• pp.474-477
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• 2003

본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널길이는 0.9$\mu\textrm{m}$로 하였으며, 온도는 300K와 77K일 때의 특성을 조사하였다. 게이트 전압이 -1.5V로 인가되었을 때, 실온에서는 -0.97V의 문턱전압 값을 얻었으나 77K에서는 -1.15V의 문턱전압 값을 얻었다. 이것은 실온에서의 Si pMOSFET가 갖는 문턱전압 값(-1.36V)보다 동작특성이 우수함을 알 수 있었다.

• 전기학회논문지P
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• 제58권4호
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• pp.437-446
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• 2009

Solar, as an ideal renewable energy, it has inexhaustible, clean and safe characteristics. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.773-776
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• 2003

본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널 길이는 0.9$\mu\textrm{m}$로 하였으며, 온도는 300K와 77K일 때의 특성을 조사하였다. 게이트 전압이 -1.5V로 인가되었을 때, 실온에서는 -0.97V의 문턱전압 값을 얻었으나 77K에서는 -1.15V의 문턱전압 값을 얻었다. 이것은 실온에서의 Si pMOSFET가 갖는 문턱전압 값(-1.36V)보다 동작특성이 우수함을 알 수 있었다.

• 전기학회논문지P
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• 제58권3호
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• pp.339-346
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• 2009

Photovoltaic (PV) energy is a renewable and harmless energy which offers many advantages. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation and module temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• 한국동물위생학회지
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• 제39권4호
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• pp.221-226
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• 2016

The animal welfare issues in cattle breeding include breeding environment, elimination, and castration. Among these, castration is unavoidable because it decreases cattle aggressiveness, improves meat quality, and enhances feed efficiency. In this study, the degree of stress associated with various methods of castration treatment was investigated for animal welfare in Hanwoo breeding. Cortisol levels dramatically increased right after castration in both the SoF and SoV groups. However, the increase in the SoF group was significantly (P<0.05) higher than that in the SoV group, and the range of decrease was also smaller. Among the behavioral characteristics, standing was significantly (P<0.05) higher in the SoV ($374.93{\pm}21.51$) and SoF ($379.93{\pm}21.30$) groups based on the behavioral time (min/12 hours) compared to that in the NC group ($359.37{\pm}19.69$). The SoF and SoV groups did not show any significant (P<0.05) difference. In terms of behavioral frequency, the NC group demonstrated a significantly (P<0.05) high frequency of drinking, self-grooming, scratching, and rubbing, and a significantly (P<0.05) less frequency of fighting behavior. The feeding time significantly (P<0.05) decreased in the SoV and SoF groups, and their frequencies of pairwise grooming were significantly (P<0.05) less. Based on the results, the cattle experienced less stress during castration by a veterinarian than during treatment using a move-stop.

• 전기학회논문지P
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• 제58권4호
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• pp.521-525
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.