• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.682-684
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range of 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.474-477
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range or 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.437-446
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• 2009

Solar, as an ideal renewable energy, it has inexhaustible, clean and safe characteristics. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.773-776
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.3
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• pp.339-346
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• 2009

Photovoltaic (PV) energy is a renewable and harmless energy which offers many advantages. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation and module temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• Korean Journal of Veterinary Service
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• v.39 no.4
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• pp.221-226
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• 2016

The animal welfare issues in cattle breeding include breeding environment, elimination, and castration. Among these, castration is unavoidable because it decreases cattle aggressiveness, improves meat quality, and enhances feed efficiency. In this study, the degree of stress associated with various methods of castration treatment was investigated for animal welfare in Hanwoo breeding. Cortisol levels dramatically increased right after castration in both the SoF and SoV groups. However, the increase in the SoF group was significantly (P<0.05) higher than that in the SoV group, and the range of decrease was also smaller. Among the behavioral characteristics, standing was significantly (P<0.05) higher in the SoV ($374.93{\pm}21.51$) and SoF ($379.93{\pm}21.30$) groups based on the behavioral time (min/12 hours) compared to that in the NC group ($359.37{\pm}19.69$). The SoF and SoV groups did not show any significant (P<0.05) difference. In terms of behavioral frequency, the NC group demonstrated a significantly (P<0.05) high frequency of drinking, self-grooming, scratching, and rubbing, and a significantly (P<0.05) less frequency of fighting behavior. The feeding time significantly (P<0.05) decreased in the SoV and SoF groups, and their frequencies of pairwise grooming were significantly (P<0.05) less. Based on the results, the cattle experienced less stress during castration by a veterinarian than during treatment using a move-stop.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.521-525
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.