• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1733-1736
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• 2006

Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

• Journal of the Korean Chemical Society
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• v.14 no.2
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• pp.147-153
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• 1970

Band assignments in the infrared absorption spectra of the four substituted Urea compounds, Fenuron (3-phenyl-1,1-dimethyl urea), OMU (3-cyclooctyl-1,1-dimethyl urea), Herban (3-(hexahydro-4,7-methanoidan-5-yl)-l,1-dimethyl urea), and Monuron (3-(p-chlorophenyl)-1,1-dimethyl urea), are made by analyzing the spectra obtained with various solvents. The results suggest that Fenuron and Monuron, each of which contain an unsaturated benzene ring, have a strong tendency to bond through both the amino group and the carbonyl oxygen. Herban and OMU, however, exhibit a much greater change in strength of the carbonyl bond than of the amino bond. It means that a strong hydrogen bonding occurs only at the carbonyl oxygen in the compounds.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.6
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• pp.345-349
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• 2001

This study has investigated the effect of thermal stability and mechanical property of $Fe_{80-X}P_{10}C_6B_4M_X$(X=2, 4, 6, M=transition metal) amorphous alloys fabricated by the melt-spun process. The glass transition temperature($T_g$), crystallization temperature($T_x$) and hardness increase with decreasing electron concentration (e/a) from about 7.38 to 7.18. The decrease of e/a implies the increase in the attractive bonding state between the M elements and other constituent element. The decrease in a/e leads to the enhancement of the attractive bonding state among the constituent elements which is favorable for the increase in $T_g$, $T_x$ and hardness.

• Journal of the Korean Home Economics Association
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• v.25 no.1
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• pp.35-42
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• 1987

Since the 1930's, a rapid development of resin processing has contributed to making our clothing life convenient and rich. Wrinkle considered as the largest defect of cellulose fiber is generated from fixation of molecules which are divided by compression or crookedness. It can be protected by building a bridge between the molecules the joint combination of the inside of the fiber. The formaldehyde reactive resin which is used in processing resin is a chemical compound with more than 2 N-methylol or N-alkoxymethylol group and a chemical compound with N-methylol shows the property of W.W and D.P through the very complex bridge-bonding reaction under the OH group of cellulose and acid catalyst. However, if the processing is excessively carried out, resin-processed textile emits the formaldehyde when the bridge bonding agent reacts to amine type under the acid condition or the formaldehyde remains in the condition of non-reaction or the resin combinates by itself, or the methylol group of non-reactive resin is hydrolyzed due to the insufficient themomagnetic treatment.

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.941-948
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• 2010

Ab initio and density functional theory methods have been employed to study all theoretically possible conformers of fluoroacetic acid. Molecular geometries and energetic of cis and trans monomers and cis dimers in gaseous phase have been obtained using HF, B3LYP and MP2 levels of theory, implementing 6-311++G(d,p) basis set. It was found that cis rotamers are more stable. In addition, it was found that in comparison with acetic acid the strength of hydrogen bonding in fluoroacetic acid decreased. The infrared spectrum frequencies and the vibrational frequency shifts are reported. Natural population and atom in molecule analysis performed to predict electrostatic interactions in the cyclic H-bonded complexes and charges. The proton transfer reaction is studied and activation energy is compared with acetic acid proton transfer reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.561-564
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• 2000

Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

• Bulletin of the Korean Chemical Society
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• v.17 no.2
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• pp.128-131
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• 1996

From Raman spectra, the ${\nu}g$C=O frequencies of 4-substituted benzaldehydes were found to correlate with the ${\sigma}_p$ values of the 4-x atom or group as well as the acceptor number (AN) values of solvents. In various solvents, the ${\nu}g$C=O frequency of benzaldehyde decreased upon the increase of benzaldehyde concentration. This shift was mainly due to the hydrogen bonding between the carbonyl oxygen and/or aldehydic proton of benzaldehyde and the solvent molecules. Over the 1-80 volume % change, the ${\nu}g$C=O frequency of benzaldehyde down shifted from 1709.4 $cm^{-1}$ to 1700.2 $cm^{-1}$ in CCl4 solution and from 1703.0 $cm^{-1}$ to 1698.0 $cm^{-1}$ in $C_2H_5OH$ solution. This is due to the fact that hydrogen bonding between the benzaldehyde and C2H5OH was much stronger than that between the benzaldehyde and the other solvents.

• Bulletin of the Korean Chemical Society
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• v.3 no.1
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• pp.9-13
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• 1982

Sulfametrole, $C_9H_{10}N_4O_3S_2$, crystallizes in the monoclinic system, space group $P2_1/n$ , with a = 8.145(2), b = 16.505(4), c = 9.637(1)${\AA},{\beta}=103.72(1)^{\circ},D_m=1.52gcm^{-3}$,Z=4.Intensities for 3594(2143 observed) unique reflections were measured on a four-circle diffractometer with Mo $K{\alpha}$ radiation $({\lambda}=0.71069{\AA})$. The structure was solved by direct method and refined by full-matrix least squares to a final R of 0.070. The geometrical features of the thiadiazole ring indicate some ${pi}$-electron delocalization inside the ring. The least squares planes defined by the benzene and thiadiazole rings are nearly perpendicular to each other(dihedral angle; $93.9^{\circ}$ ). All the potential hydrogen-bond donor atoms in the molecule, N(1) and N(2), are included in the hydrogen bonding. The molecules through hydrogen bonding form three dimensional network.