• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.180-180
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• 2010

본 연구에서는 P-Type의 NiO를 Glass기판의 ITO전극위에 RF-스퍼터링 방법으로 증착하였으며, NiO 완충층의 두께 변화에 따른 OLED (Organic Light Emitting Diode) 소자의 발광 특성에 대해 연구하였다[1, 2]. NiO는 우수한 전기 광학적 특성을 가지고 있어 OLED소자의 구동전압, 발광 효율 등의 특성을 향상 시킬 수 있다[3]. NiO 완충층의 두께 변화는 스퍼터링 증착시간을 통해 5-20 nm로 조절하였으며 소자의 구조는 Glass/ITO/NiO(0~20nm)/NPB(40nm)/Alq3(60nm)/LiF(0.5nm)/Al(120nm)형태로 제작하였다. ITO/NPB 계면에 NiO 완충층을 삽입함으로써 OLED 발광소자의 구동전압을 ~8V에서 ~5V (NiO, 10nm)로 낮출 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Resources Recycling
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• v.12 no.3
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• pp.38-45
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• 2003

ionic equilbria of nickel chloride in hydrochloric acid solutions were analyzed by considering chemical equilibria, mass and charge balance equations. The activity coefficients of solutes were calculated by using Bromley equation. It was found that most of species containing nickel existed as $Ni^{2+}$ 와 $NiCl^{+}$. The mole fractions of nickel hydroxides were very low in the con-centration ranges considered in this study and the mole fraction of$Ni_4$ $(OH)_{4}^{4+}$ increased greatly with the pH of the solution. The pH values of $NiCl_2$ $-HCl-NaOH-H_2$O system at $25^{\circ}C$ calculated in this study agreed well with those experimentally measured up to ionic strength of 9.4m.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.137-138
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• 2011

구리 이온은 -0.40V (vs. SCE)에서 전기화학적 환원이 일어나는 반면, 니켈 이온은 -1.19V (vs. SCE)에서 전착이 발생한다. 따라서, 단일 도금욕조 내에서 Ni-Cu 합금도금층을 제조하기 위해서는 두 금속 이온종 간의 전위차를 줄여주어야 하는데, 이를 위해 본 연구에서는 $Na_3C_6H_5O_7{\cdot}2H_2O$를 착화제로 사용하였다. 다양한 Ni-Cu 합금 도금층의 조성을 얻기 위하여 기본 도금욕 내 황산니켈과 황산구리의 비율을 10:1로 설정하였다. 도금 공정 조건에 따른 합금 도금층 조성 변화를 관찰하기 위하여 도금액 pH와 교반 속도에 따른 도금층 조성 변화를 분석하였으며, 도금액의 UV-VIS과 도금층의 XRD 와 SEM 측정을 통하여 도금욕과 도금층 간의 상관 관계를 유추하였다. 본 도금액에 사용된 $Na_3C_6H_5O_7{\cdot}2H_2O$ 착화제의 효과는 pH3에서 가장 현저하였으며, pH 변화 및 교반 속도 변화를 이용하여 다양한 합금 조성을 얻을 수 있었다.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.11-17
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• 2003

The effect of$ZrO_2$addition on the microstructure and electrical properties of Ni-Mn oxide NTC thermistors was studied. Major phases present in the sintered bodies of $Ni_{1.0}Mn_{2-x}Zr_xO_4$ were the solid solutions of Ni-Mn-Zr oxides with a cubic spinel structure and the $ZrO_2$ with a tetragonal structure. The $ZrO_2$ was formed by the partial decomposition or incomplete formation of the Ni-Mn-Zr oxides during sintering. With increasing the amount of added $ZrO_2$, the $ZrO_2$ phase increased. The relationship between log resistivity (log p) and the reciprocal of absolute temperature (1/T) of the NTC thermistors prepared was linear, indicative of NTC characteristics. The resistivity, B constant and activation energy of the thermistors increased with increasing $ZrO_2$ content.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.303-307
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• 2008

$NiO,\;Cu_2O,\;Mn_2O_3$ and $Cr_2O_3$ as p-type semiconductors were added in CoO with 15 wt.% ethylene glycol binder and measured the butane gas sensing characteristics. The highest sensitivity is obtained for the NiO-CoO sensors. CoO-20 at.% NiO sensor with 15 wt.% ethylene glycol binder sintered at $1100^{\circ}C$ for 24 h exhibits high sensitivity of 90 % to 5000 ppm butane gas at the sensor temperature of $250^{\circ}C$, compared to low sensitivities at the low operating temperature for commercial sensors. Response and recovery times are, respectively, within few seconds and 1min in the static flow system, indicating rapid adsorption and desorption of butane gas on sensor surface even at this low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.423-426
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• 2012

$Al_2O_3$/NiO powder was obtained through hydrolysis-condensation reactions and thermal treatments. An organic additive, triblock copolymer surfactant P123, was added to the starting materials to control the surface area and morphology. The synthesized powder was characterized by X-ray diffractometry (XRD), field-emission scanning electron microscopy (FE-SEM) and a Brunner-Emmett-Teller surface analysis (BET). The heterogeneous catalytic activity of this powder was applied to an epoxidation reaction of styrene and was monitored using a gas chromatograph with mass spectrophotometry (GC/MS).

• Journal of Electrochemical Science and Technology
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• v.4 no.1
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• pp.34-40
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• 2013

The structural and electrochemical properties of $Li_{0.99}Ni_{0.46}Mn_{1.56}O_4$ ($Fd{\bar{3}}m$, disordered spinel) cathode material were studied and compared with stoichiometric $LiNi_{0.5}Mn_{1.5}O_4$ ($P4_332$, ordered spinel). First cycle discharge capacity of $Li_{0.99}Ni_{0.46}Mn_{1.56}O_4$ was similar to that of $LiNi_{0.5}Mn_{1.5}O_4$ at C/3 and 1C rate, but cycling performance of $Li_{0.99}Ni_{0.46}Mn_{1.56}O_4$ was better than that of $LiNi_{0.5}Mn_{1.5}O_4$ especially at high rate of 1C. This can be explained by performing synchrotron based in-situ XRD and results of GITT measurements. It is considered that faster lithium ion diffusion in the $Li_{0.99}Ni_{0.46}Mn_{1.56}O_4$ cathode results in the improvement of the rate capability. To study structural changes during cycling, synchrotron in-situ XRD patterns of both the samples were recorded at C/3 and 1C rate. Compared to stoichiometric $LiNi_{0.5}Mn_{1.5}O_4$, disordered $Li_{0.99}Ni_{0.46}Mn_{1.56}O_4$ spinel sample has pseudo one phase behavior and one step phase transition between two cubic phases. So, $LiNi_{0.5}Mn_{1.5}O_4$ would experience a much greater strain and stress, originating from the two phase transitions between three cubic phases and suffer from capacity loss during cycling especially at high rate.