• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.16 no.9
• /
• pp.6201-6213
• /
• 2015

The purpose of this study was to investigate the effect of Reality Orientation Therapy and Spaced Retrieval Therapy of the applied of CERAD-K type cognitive rehabilitation program for mild Alzheimer's patients. The tool used to this study was CERAD-K neuropsychological test consists of Boston Naming, a simple mental status, the word list recall, and configure behavior. A non-equivalent control group pretest-posttest design was used. The participants were 85 mild Alzheimer's patients (experimental group: 32, control group: 53) who registered G Health Center, in Gyeonggi province. Those Data were collected from 10:00 to 11:00, 14:00 to 15:00, twice a week on Tuesday and Friday, 8 session, from September 1 to September 30, 2014. Control group was participated daily routine program only in the G public health center.The data were analyzed using SPSS WIN 21.0 program. The results of this study were as follows;Boston Naming(F=3.22, p<.001), simple mental status(F=5.92, p<.001), and configure behavior(F=4.67, p<.001) were accepted, but word list recall(F=.75 p>.05) was not accepted. The study findings indicate that the Reality Orientation Therapy and Spaced Retrieval Therapy of the applied of CERAD-K type cognitive rehabilitation program is effective and can be recommended as intervention for mild Alzheimer's patients.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.5
• /
• pp.371-375
• /
• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.5
• /
• pp.69-76
• /
• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Korean Journal of Applied Biomechanics
• /
• v.24 no.3
• /
• pp.201-207
• /
• 2014

This study investigated the center of mass and lower extremity kinematic patterns between carved and basic paralell turn during alpine skiing. Six experienced skiers (age: $20.67{\pm}4.72yrs$, body mass: $72.67{\pm}7.15kg$, height: $171.00{\pm}5.51cm$) participated in this study. Each skier were asked to perform carved and basic paralell turn on a $22.95^{\circ}$ groomed slope. Each turn was divided into the initiation phase, steering phase 1 and 2. The results of this study show that the carved turn spent significantly less running time than basic paralell turn at all three phases (p<.05). Also vertical displacement of the center of mass was significantly greater in carved turn at all three phases, whereas inward leaning angle of the center of mass was significantly greater in carved turn at the steering phase 1 and 2 (p<.05). Bilateral knee and hip joint angle were significantly greater in basic paralell turn at the initiation phase and the steering phase 2 (p<.05). On the other hand, left knee and hip joint angle were significantly greater in basic paralell turn at the steering phase 1 (p<.05). In order to perform successful carved turn, we suggest that skiers should coordinate bilateral knee and hip joint angles to adjust the center of mass, depending on three ski turn phases.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.45 no.4
• /
• pp.562-567
• /
• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1299-1300
• /
• 2006

Floating p-well 전압 감지를 이용한 시간 지연 회로를 적용하여 punch-though형 절연 게이트 바이폴라 트랜지스터 (PT-IGBT)의 최적화된 보호 회로를 제안하였다. Floating P-well 축전기와 게이트 저항은 정상 스위칭 동작시 단락 회로 감지 동작 (false detection of fault)을 차단하며, floating p-well 전압은 단락회로 상황시 풀-다운 (pull-down) MOSFET의 문턱 전압 이상으로 상승되어 풀-다운 MOSFET을 턴-온(turn-on) 시킴으로서 IGBT의 게이트 전압을 감소시킨다. 이에 따라 IGBT의 컬렉터 전류는 자연스럽게 감소된다. 실험 결과를 통해, 단락회로 상황에서 최적화된 IGBT의 보호회로가 소프트-셧다운 (soft-shutdown) 특성을 보이는 것을 확인할 수 있다.

• Proceedings of the Korea Contents Association Conference
• /
• 2016.05a
• /
• pp.187-188
• /
• 2016

열대열 말라리아(Plasmodium falciparum, P. falciparum, P. f) 신속진단키트의 경우, P. falciparum에 특이적인 단백질로써 Histidine Rich Protein 2 (PfHRP2)가 사용되고 있다. 그러나 최근 연구에서 남아메리카와 중앙아메리카를 중심으로 pfhrp2/pfhrp3 유전자가 결여된 P. falciparum 열원충이 나타나는 것으로 보고된 바 있다. 본 연구에서는 생물정보학을 기반으로 PfHRP2 항원 단백질을 대체할 수 있는 새로운 P. falciparum 특이 항원 단백질을 선정하고자, PlasmoDB에서 5,777개의 P. falciparum 관련 단백질 리스트를 얻었다. 이후 NCBI BLAST를 통해 단백질 아미노산 서열을 분석하고 정상인에게 존재하지 않으며, 동시에 다른 말라리아 열원충(P. vivax, P. ovale, P. malariae, P. knowlesi)에도 존재하지 않는 P. falciparum 특이 아미노산 서열을 가진 단백질 15개를 추출하였다. IEDB analysis를 이용하여 에피토프, 수용성, 베타-턴, 접근성, 유연성, 면역원성을 분석하여 높은 평균값을 갖는 상위 3개 단백질을 선별하였다. KEGG pathway와 EMBL-EBI를 통해 선별된 3개 단백질의 혈액내 검출 가능성 및 아미노산 서열의 보존성을 분석하여 최종적으로 Glutamate-Rich Protein (GLURP)을 선정하였다. AIDA를 통해 단백질 아미노산 서열을 이용한 3차 구조 예측으로 GLURP의 구조 및 항체와의 결합을 도식화하였다. 최종적으로 선정한 GLURP는 pfhrp2/pfhrp3 유전자 결여 P. falciparum까지 특이적으로 진단이 가능하여 차세대 P. falciparum 특이 신속진단키트 개발에 도움이 될 수 있을 것으로 기대한다.

• Proceedings of the KIPE Conference
• /
• 2006.06a
• /
• pp.555-557
• /
• 2006

This paper represent improved On-line Turn off Angle control schemes for switched reluctance motors based on current control. For the purpose of the finding optimal commutation switching angle point, it is utilized him on and turn off position calculation with inductance vs. current vs. flux linkage analysis method. The goal of proposed paper is the maximization of the energy conversion per stroke and maximizing efficiency and obtaining approximately flat-topped current waveform. The proposed control scheme is demonstrated on a prototype experimental system.

• Journal of Korean Society of Transportation
• /
• v.22 no.6
• /
• pp.121-131
• /
• 2004

The K-shortest path algorithms are largely classified into two groups: oneis for finding loopless path (simple path), another loop paths. In terms of cimputational complexities, in general the loop-paths-finding ones are considered more efficient and easier to be handled than the loopless-paths-finding. The entire path deletion methods have been known as the best efficient algorithms among the proposed K-shortest path algorithms. These algorithms exploit the K-th network transformation to prevent the same path, which was already selected as the (K-1)th path, from being redetected. Nevertheless, these algorithms have a critical limitationto be applied in the practical traffic networks because the loops, in which the same modes and links can be unlimitedly repeated, are not preventable. This research develops a way to be able to selectively control loop-paths by applying link-label. This research takes an advantage of the link-based shortest path algorithms that since the algorithms can take care of two links simultaneouslyin the searching process, the generation of loops can be controlled in the concatenation process of the searched link and the preceded link. In concatenation of two links, since the precede link can be treated a sub-shortest to this link from the origination, whether both the node and the link of the searched link were already existed or not can be evaluated. Terefore, both the node-loopless path, in which the same node is not appeared, and the link-loopless, in which the same link is not appeared, can be separately controlled. Especially, the concept of the link-loopless path is expended to take into consideration reasonable route choice behaviors such as U-Turn, P-Turn, and Turn-Penalty, which are frequently witnessed in urban traffic network with intersections. The applicability of the proposed method is verified through case studies.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.99-100
• /
• 2006

절연 게이트 바이폴라 트랜지스터 (Insuialed atc Bipolar Transistor : IGBT)는 높은 전류구동 능력과 높은 입력 임피던스 특성으로 인해 대전력 스위칭 소자로 널리 응용되고 있다. 특히, 대용량 모터 구동을 위해 응용되는 경우, 모터의 부하 특성상, 모터의 단락에 의한 단락 회로 (Short-circuit fault) 현상을 비롯한 클램핑 다이오드의 파손으로 인한 unclamped 유도성 부하 스위칭 (UIS) 상황에서 견딜 수 있도록 설계되어야 한다. 이를 위해, 이전 연구를 통해 Floating p-well을 600V급 IGBT에 도입함으로써 UIS 상황에서 IGBT가 견딜 수 있는 에너지(항복 에너지)륵 증가시키고 Floating p-weil 전압을 감지함으로써 단락 회로 상황에서 IGBT가 보호될 수 있도록 보호회로를 제안하고 검증하였다. 그러나 이 보호회로는 수평형 금속 산화막 반도체 전계 효과 트랜지스터 (Latcral MOSFET)로 제작됨으로써 보호회로 기능을 수행하기 위해서는 넓은 면적을 요구하였다. 또한, 정상적인 동작 상황에서 오류를 감지 (오류 감지: False detection)하는 동작으로 인해 추가적인 filter를 요구함으로써 보호회로 동작 속도를 감소시켰다. 이러한 단점을 해결하기 위해, 수평형 절연 게이트 바이폴라 트랜지스터 (Lateral IGBT : LIGBT)를 보호회로에 적용함으로써 LIGBT의 높은 전류 구동능력을 이용하여 기존 보호회로 면적의 30% 수준의 보호회로를 구현하였다. 또한, 구현된 보호회로는 오류 감지 현상을 제거함으로써 보호회로의 동작 속도를 개선하였다. 제안된 보호회로와 1200V급 IGBT는 7장의 마스크를 이용한 표준 수평형 IGBT 공정을 이용하여 제작되었으며, 특히, 전자빔 조사를 이하여 턴오프 속도를 개선함으로써 고속 스위칭에 적합하도록 최적화 되었다.