• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.55-56
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• 2007

The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• East Asian mathematical journal
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• 제25권1호
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• pp.89-96
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• 2009

In this paper, we present a unique common xed point theorem under weak compatible mappings of type(A), which extends and generalizes a result of Achari [1].

• Journal of Periodontal and Implant Science
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• 제35권1호
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• pp.31-41
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• 2005

Fimbriae (fimA) of Porphyromonas gingivalis are filamentous components on the cell surface and are thought to play an important role in the colonization and invasion of periodontal tissue. P. gnigivalis fimA gene encoding fimbrillin, a subunit of fimbriae, has been classified into 5 genotypes (types I to V) based on the nucleotide sequences. In the present study, we examined the prevalence of these fimA genotypes in patients with dental implant and the relationship between prevalence of these genotypes and peri-implantitis. Dental plaque specimens obtained from 80 peri-implant sulci of 50 patients with dental implants were analyzed by 16S rRNA fimA gene-directed PCR assay. P. gingivalis were detected in 74.4% of the samples of the control group (healthy peri- implant sulci; probing depth<5mm) and in 92.0% of the samples of the test group (peri-implant sulci with peri-iimplantitis; probing $depth{\geqq}5mm$). Among the P. gingivalis-positive samples of the control group, the most prevalent fimA type was type I (29.3%), followed by type II (26.8%). In contrast, a majority among the P. gingivalis-positive samples of the test group was type II (56.S%), followed by type I (43.5%). TypeII fimA genotype organisms were detected more frequently in the test group and a significant difference in the occurrence of type II was observed between test and the control groups. A correlation between specific fimA types and peri-implant health status was found in type II (OR 3.545) and only a weak relationship was revealed in typeIV(OR 3.807). These findings indicate that P. gingivalis strains that possess type II fimA are predominant in peri-implant sulci with peri-implantitis and are closely associated with peri-implant health status. P. gingivalis with type II fimA may be involved in peri-implantitis.

• 통합자연과학논문집
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• 제10권1호
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• pp.33-39
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• 2017

Consider the problem of estimating a $p{\times}1$ mean vector ${\theta}(p-q{\geq}3)$, $q=rank(P_V)$ with a projection matrix $P_v$ under the quadratic loss, based on a sample $X_1$, $X_2$, ${\cdots}$, $X_n$. We find a James-Stein type decision rule which shrinks towards projection vector when the underlying distribution is that of a variance mixture of normals and when the norm ${\parallel}{\theta}-P_V{\theta}{\parallel}$ is restricted to a known interval, where $P_V$ is an idempotent and projection matrix and rank $(P_V)=q$. In this case, we characterize a minimal complete class within the class of James-Stein type decision rules. We also characterize the subclass of James-Stein type decision rules that dominate the sample mean.

• KSBB Journal
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• 제24권4호
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• pp.393-396
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• 2009

단백질을 동물세포내부로 직접 주입할 수 있는 살모넬라 균주의 T3SS를 활용하여 모델 단백질인 lipase를 세포외부로 분비하는 시스템을 제작하였다. T3SS의 effector 단백질인 SlrP, SptP의 N-말단부분과 lipase를 fusion하였다. Lipase 분비실험의 결과 S. typhimurium SL1344 (sptP-tliA) 균주의 경우 lipase 활성도가 약 2.6배 증가하는 결과를 얻을 수 있었다. 본 실험결과를 바탕으로 T3SS에 관한 연구가 더욱 활발히 이루어진다면, T3SS를 신개념 약물전달시스템으로 활용이 가능해 지리라 예상된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Korean Journal of Acupuncture
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• 제27권1호
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• pp.13-22
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• 2010

Objectives: The information on the depth where pulse wave appears is as important as pulse waveform. The aim of this study was to classify pulse pattern using pressure-height(P-H) volume-curve by 5 applied pressure levels to find out the information on the depth of pulse and interpret the floating & sinking pulse in oriental medical pulse diagnosis. Methods: We used 3 dimensional pulse imaging analyser (DMP-3000, DAEYOMEDI Co., Korea), which measures radial pulse waveforms noninvasively by way of tonometric method at 5 applied pressure levels, and shows P-H volume-curves by applied pressure. 448 subjects were enrolled, pulse waveforms were measured and the P-H volume-curves were gained on the three locations of Chon, Kwan, and Cheok. Results: Gained P-H volume curves were classified into 3 types ; increase type, decrease type, and increase-decrease type. Increase-decrease type appeared more often on Chon and Kwan, while increase type appeared more often on Cheok. In a few cases, decrease-type appeared on Chon and Kawn, however it never appeared on Cheok. Conclusions: Through the classification of pulse by P-H volume-curve, we gained the information on the depth of pulse. We speculate the decrease type as floating pulse, the increase-decrease type as middle pulse, and the increase type as sinking pulse in oriental medical pulse diagnosis. After more researches on P-H volume-curve by applied pressure, the P-H volume-curve may be used as an important factor for pulse diagnosis.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국재료학회지
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• 제26권4호
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.