• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.750-757
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• 2002

A new lateral trench LTEIGBT with p+ diverter was proposed to suppress latch-up of LTIGBT The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEICBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occured at an anode current density of 540A/$\textrm{cm}^2$. In addition, the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. The forward blocking voltage of the conventional LTIGBT of the same size was no more than 105V, We fabricated the proposed LTEIGBT with a p+ diverter after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90㎃ and 70㎃, respectively, at the same breakdown voltage of 150V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.342-345
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• 2002

A new lateral trench electrode IGBT with p+ diverter was Proposed to suppress latch-up of LTIGBT. The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEIGBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occurred at an anode current density of 540A/$\textrm{cm}^2$. And the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. That of the conventional LTIGBT of the same size was no more than 105V. When the gate voltage is applied 12V, the forward conduction currents of the Proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90mA and 70mA, respectively, at the same breakdown voltage of 150V.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1315-1316
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• 2007

This is paper, a new structure to effectively improve the Vce(sat) voltage and latch-up current in NPT type IGBTs with hole barrier layer and diverter. The hole barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n-layer. And the diverter significantly reduce hole current from flowing into the p-layer and improve latch up current. Analysis on the Breakdown voltage shows identical values compared to existing Conventional IGBT structures. This shows an improvement on Vce(sat) and Latct-up current without lowering other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• Journal of Cerebrovascular and Endovascular Neurosurgery
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• v.26 no.1
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• pp.65-70
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• 2024

We present a case of intracranial aneurysm located in the P1 segment of left posterior cerebral artery in the context of tetralogy of Fallot. Complex variations included right aortic arch with abnormal branching. Also, the bilateral vertebral arteries were absent, with a type I persistent proatlantal intersegmental artery of the left side. The aneurysm was treated with endovascular intervention with a Tubridge flow diverter and was noted to be completely cured on 6-month follow-up. We discuss the many considerations in this patient including developmental and modern-era treatment.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of Cerebrovascular and Endovascular Neurosurgery
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• v.25 no.3
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• pp.275-287
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• 2023

Objective: Flow diverting stents (FDS) are a validated device in the treatment of intracranial aneurysms, allowing for minimally invasive intervention. However, after its approval for use in the United States in 2011, post-market surveillance of adverse events is limited. This study aims to address this critical knowledge gap by analyzing the FDA Manufacturer and User Facility Device Experience (MAUDE) database for patient and device related (PR and DR) reports of adverse events and malfunctions. Methods: Using post-market surveillance data from the MAUDE database, PR and DR reports from January 2012-December 2021 were extracted, compiled, and analyzed with R-Studio version 2021.09.2. PR and DR reports with insufficient information were excluded. Raw information was organized, and further author generated classifications were created for both PR and DR reports. Results: A total of 2203 PR and 4017 DR events were recorded. The most frequently reported PR adverse event categories were cerebrovascular (60%), death (11%), and neurological (8%). The most frequent PR adverse event reports were death (11%), thrombosis/thrombus (9%) cerebral infarction (8%), decreased therapeutic response (7%), stroke/cerebrovascular accident (6%), intracranial hemorrhage (5%), aneurysm (4%), occlusion (4%), headache (4%), neurological deficit/dysfunction (3%). The most frequent DR reports were activation/positioning/separation problems (52%), break (9%), device operates differently than expected (4%), difficult to open or close (4%), material deformation (3%), migration or expulsion of device (3%), detachment of device or device component (2%). Conclusions: Post-market surveillance is important to guide patient counselling and identify adverse events and device problems that were not identified in initial trials. We present frequent reports of several types of cerebrovascular and neurological adverse events as well as the most common device shortcomings that should be explored by manufacturers and future studies. Although inherent limitations to the MAUDE database are present, our results highlight important PR and DR complications that can help optimize patient counseling and device development.