• 제목/요약/키워드: Oxynitride

검색결과 135건 처리시간 0.028초

Synthesis and Characterization of CrZr-O-N Films Using Cr-Zr Segment Targets by Unbalanced Magnetron Sputtering

  • Kim, Dong Jun;La, Joung Hyun;Ki, Sung Min;Lee, Sang Yul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.94-94
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    • 2013
  • The Cr-Zr-N films have much improved mechanical properties and very smooth surface roughness. However, in spite of their outstanding properties, the Cr-Zr-N coatings revealed their mechanical properties deteriorated severely with increasing Zr content at $500^{\circ}C$ ecause of very rapid oxidation. Recently oxynitride films have been widely studied due to their excellent unique mechanical properties and oxidation resistance. In this work, CrZr-O-N films with various O contents were synthesized by unbalanced magnetron sputtering with Cr-Zr segment targets (Cr:Zr volume ratios is 1:1) and all films were prepared in a nitrogen rich mixture of N2 and O2. Characteristics such as crystalline structure, hardness and chemical composition as a function of the O content were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), microhardness testing system and energy dispersive spectroscopy (EDS). Results showed that the thin films had dense and compact microstructure as O content in the films increases. The microstructure of the thin films consisted of mainly crystalline Cr (Zr)N phase and Cr2O3 phase. The maximum hardness and elastic modulus of the films was measured to be approximately 33.2 GPa and 280.6 GPa from the films with low content of O elements. Detailed experimental results will be presented.

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실리카 광도파로용 SiON 후막 특성에서 RF Power와 $SiH_4$/($N_2$O+$N_2$) Ratio가 미치는 영향 (The Effect of RF Power and $SiH_4$/($N_2$O+$N_2$) Ratio in Properties of SiON Thick Film for Silica Optical Waveguide)

  • 김용탁;조성민;서용곤;임영민;윤대호
    • 한국세라믹학회지
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    • 제38권12호
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    • pp.1150-1154
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    • 2001
  • 플라즈마 화학기상증착(PECVD)법을 이용하여 실리카 광도파막의 코어로 이용되는 규소질산화막(SiON)을 Si 웨이퍼 위에 SiH$_4$,$N_2$O, $N_2$가스를 혼합하여 저온(32$0^{\circ}C$)에서 증착하였다. Prism coupler 측정을 통해 SiON 굴절률 1.4663~1.5496을 얻었으며, SiH$_4$/($N_2$O+$N_2$) 유량비와 rf power가 각각 0.33과 150W에서 8.67$mu extrm{m}$/h의 증착률을 나타내었다. 또한 SiH$_4$/($N_2$O+$N_2$) 유량비가 감소함에 따라 SiON막의 roughness는 41~6$\AA$까지 감소하였다.

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출발 Si 분말의 입자크기에 따른 Sintered RBSN의 기계적특성 변화 (Effect of Raw-Si Particle Size on the Mechanical Properties of Sintered RBSN)

  • 이주신;문지훈;한병동;박동수;김해두
    • 한국세라믹학회지
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    • 제38권8호
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    • pp.740-748
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    • 2001
  • 출발원료 Si 분말의 입자크기를 다양하게 하여 질화반응 및 가스압 소결시 입자크기에 따른 산소함량의 차이에서 나타나는 상변화와 그로 인한 치밀화 거동, 미세구조 발달 및 기계적 특성에 대하여 고찰하였다. 145$0^{\circ}C$의 질화반응에서는 조대분말을 사용한 경우가 미세분말을 사용한 경우보다 높은 질화율을 나타냈으며, 각 분말크기에 따른 native oxide의 함량차에 따라 각기 다른 2차 결정상들이 검출되었다. 조대분말을 사용한 경우에는 제 2상의 석출로 인한 액상량의 부족으로 고온의 소결온도에서도 치밀화를 이루지 못해 낮은 강도값을 나타내었다. 한편, 미세분말을 사용한 경우에는 질화반응 후 석출된 제 2상이 소결온도가 증가함에 따라 용융되면서 치밀화를 이루어 높은 강도값을 나타내었다. 높은 강도값은 미세분말을 사용한 시편들에서 얻어졌으나 높은 파괴인성값은 상대적으로 큰 분말을 사용한 시편들에서 얻어졌는데, 이는 미세한 입자들로 구성된 기지상 내에 잘 발달된 주상정 입자들을 갖는 미세구조에 기인된 것으로 사료된다.

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Nanostructured Bulk Ceramics (Part IV. Polymer Precursor Derived Nanoceramics)

  • Han, Young-Hwan;Mukherjee, Amiya K.
    • 한국세라믹학회지
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    • 제47권3호
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    • pp.205-209
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    • 2010
  • In the last (fourth) section, the discussion will entail a silicon-nitride/silicon-carbide nanocomposite, produced by pyrolysis of liquid polymer precursors, demonstrating one of the lowest creep rates reported so far in ceramics at the comparable temperature of $1400^{\circ}C$. This was first achieved by avoiding the oxynitride glass phase at the intergrain boundaries. One important factor in the processing of these nanocomposites was the use of the electrical field assisted sintering method.

일반화된 회귀신경망과 유전자 알고리즘을 이용한 식각 마이크로 트렌치 모델링 (Modeling of etch microtrenching using generalized regression neural network and genetic algorithm)

  • 이덕우;김병환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 심포지엄 논문집 정보 및 제어부문
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    • pp.27-29
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    • 2005
  • Using a generalized regression neural network, etch microtrenching was modeled. All neurons in the pattern layer were equipped with multi-factored spreads and their complex effects on the prediction performance were optimized by means of a genetic algorithm. For comparison, GRNN model was constructed in a conventional way. Comparison result revealed that GA-GRNN model was more accurate than GRNN model by about 30%. The microtrenching data were collected during the etching of silicon oxynitride film and the etch process was characterized by a statistical experimental design.

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부분 가수분해된 AlN 분말로부터 산질화 알루미늄(AlON)의 합성 및 소결 (Synthesis of AlON from Partially Hydrolyzed AlN Powder and its Sintering)

  • 김두영;최상욱;남건태
    • 한국세라믹학회지
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    • 제31권11호
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    • pp.1362-1368
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    • 1994
  • The hydrolysis of aluminum nitride was increased gradually with increasing reaction time from 1 hrs to 24 hrs and/or with decreasing the addition of the reaction water from 100 mι 100mι. Amorphous aluminum hydrate, formed in the beginning of the reaction, was transformed to bayerite and to pseudoboehmite at below and above 8$0^{\circ}C$, respectively. Aluminum oxynitride was synthesized by heating the partially hydrolyzed aluminum nitride at 1$700^{\circ}C$ for 4 hrs or at 175$0^{\circ}C$ for 30 min. AlON specimen with 1 wt% of Y2O3 that was molded and then sintered pressurelessly at 190$0^{\circ}C$, exhibits 98% of the theoretical density and a translucency of 68% in the visible ray zone.

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passivasion 막의 Plasma 처리효과와 광전도 (A study on the plasma treatment effect of passivasion film and the photoconductance)

  • 이승환;김재호;홍형기;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 하계종합학술대회 논문집
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    • pp.383-385
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    • 1989
  • Nitrided oxides have been recently investigated for the application as a replacement of thermally grown $SiO_2$in the MIS devices. In this paper, thin oxides were nitrided in the $N_2$plasma ambient. After B - T stress is performed on the sample, it was noticed that the current density is increased. From the I - V measurement, dominant conduction mechanism of oxynitride films appeared to be Fowler - Nordheim emission. And also its breakdown strength is increased about 2.2 MV/cm compared with the oxide films.

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$SiC-Si_3N_4$ 세라믹공구의 소결시간과 조성변화가 절삭특성에 미치는 영향 (Effect of Sintering Time and Composition on Cutting Characteristics of $SiC-Si_3N_4$ Ceramic Tool)

  • 박준석;김경재;이성구;권원태;김영욱
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2001년도 춘계학술대회 논문집(한국공작기계학회)
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    • pp.321-326
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    • 2001
  • In the present study, $Si_3N_4-SiC$ ceramic composites that contained up to 20 wt% of dispersed SiC particles were fabricated via hot-pressing with an oxynitride glass. The microstructure, the mechanical properties, and the cutting performance of resulting ceramic composites were investigated. By fixing the composition as $Si_3N_4-20$ wt% SiC, the effect of sintering time on the microstructure, the mechanical properties, and the cutting performance were also investigated. For machining of gray cast i개n, the tool life increases with increasing the amount of SiC content in the composites; The tool life also increased with increasing the sintering time. The tool life of the home-made cutting tools was very close to that of commercial $Si_3N_4$ cutting tool. The superior cutting performance of $Si_3N_4-SiC$ ceramic cutting tools suggests the possibility to be a new ceramic tool material.

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Effect of Additive Composition on Fracture Toughness of In Situ-Toughened SiC−Si3N4 Composites

  • Lee, Young-Il;Kim, Young-Wook
    • 한국세라믹학회지
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    • 제44권4호
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    • pp.189-193
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    • 2007
  • Effect of additive composition on fracture toughness of in situ-toughened $SiC-Si_3N_4$ composites was investigated for five different additive compositions. The highest toughness $(6.4MPa{\cdot}m^{1/2})\;in\;SiC-Si_3N_4$ composites investigated herein was obtained when an Y-Mg-Si-Al-O-N oxynitride glass was used as a sintering additive. The improvement in fracture toughness was produced by enhanced bridging and deflection by $Si_3N_4$ grains.

RTN에 의해 제작된 MOS 소자의 C-V 특성 (C-V Characteristics of MOS Devices by Rapid Thermal Nitridation(RTN))

  • 장의구;최원은;윤돈영;이오성;김상용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.785-787
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    • 1988
  • The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

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