• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.601-606
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• 1998

ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

• Journal of Magnetics
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• 제11권1호
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• pp.12-15
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• 2006

Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

• 한국표면공학회지
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• 제40권3호
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• 한국가스학회:학술대회논문집
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• 한국가스학회 2001년도 추계학술발표회 논문집
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• pp.285-290
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• 2001

• 한국수소및신에너지학회논문집
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• 제22권6호
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• pp.884-894
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• 2011

Effects of temperature, volatile content, particle diameter and solid input weight were investigated in the batch fluidized bed reactor using OCN703-1100 particle as oxygen carrier and Roto coal and char as fuels. Two solid fuels represented the best reactivity at different temperature, $900^{\circ}C$ for Roto coal and $950^{\circ}C$ for char, respectively. However, we selected $900^{\circ}C$ as the best operating temperature because the improvement of reactivity of char at $950^{\circ}C$ was negligible. Char represented better reactivity than Roto coal because char contains low volatile than Roto coal. For both solid fuels, reactivities were improved with increasing of the particle diameter. These results were explained by solid mixing tests in a transparent fluidized bed using two char particles having different particle size ranges and OCN703-1100 particle. The bigger particle showed better solid mixing with OCN703-1100 particle, and therefore, represented better reactivity. For both solid fuels, reactivities were improved with increasing of the solid input weight within the experimental conditions of this study because the weight of coarse particles increased with the solid input weight increased, and therefore, these coarse particles can mix well with the oxygen carrier.

• 한국수소및신에너지학회논문집
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• 제27권2호
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• pp.201-210
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• 2016

To develop a pressurized chemical looping combustor, conceptual design of 0.5 MWth chemical looping combustor was performed by means of mass and energy balance calculations. Based on the conceptual design, reactivity of oxygen carrier and solid circulation rate were selected as key parameters. Sensitivity analysis of those key parameters were conducted with the change of oxygen carrier utilization percent from 5 to 50% and proper solid circulation rate and solid conversion rate to meet 98% of $CO_2$ selectivity were confirmed. Feasibility of 0.5 MWth pressurized chemical looping combustor was confirmed by experimental studies to find real solid circulation rate and $CO_2$ selectivity within the operating conditions based on the conceptual design. We could varied very wide range of solid circulation rate in two interconnected fluidized bed system. We also got enough $CO_2$ selectivity more than 98% in semi-continuous chemical looping combustor using OCN717 oxygen carrier. Consequently, feasibility of 0.5 MWth pressurized chemical looping combustor was confirmed.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.635-641
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• 2018

To select the operating condition of 0.5 MWth chemical looping combustion system, minimum fluidization velocity, transition velocity to fast fluidization and solid circulation rate were measured using mass produced new oxygen carrier (N016-R4) which produced by spray drying method for 0.5 MWth chemical looping combustion system. A minimum fluidization velocity decreased as the pressure increased. The measured transition velocity to fast fluidization was 2.0 m/s at ambient temperature and pressure. The measured solid circulation rate increased as the solid control valve opening increased. We could control the solid circulation rate from 26 to $93kg/m^2s$. Based on the measured minimum fluidization velocity and transition velocity to fast fluidization, we choose appropriate operating conditions and demonstrated continuous solid circulation at high pressure condition (5 bar-abs) up to 24 hours.

• KSBB Journal
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• 제6권3호
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• pp.231-240
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• 1991

Recently, developments of large scale and high density cell culture methods have been the objects of many researches, because the demand of various pharmaceutical products produced by animal cell culture has been rapidly increasing. The cell culture equipment should have the requirements such as sufficient oxygen transfer and mixing, low shear stress and surface tension, and small foaming. In order to develop a proper bioreactor meeting these requirements simultaneously, a perfluorocarbon having high solubility of oxygen was sprayed into the medium as an oxygen carrier instead of air. Also, a new impeller was developed and combined together with the perfluorocarbon spraying system so as to design a new bioreartor for cell cultivation. The new impeller had better characteristics of mixing and oxygen transfer than the paddle and cell-lift impellers based on the same, shear rate. But, it was observed that the volumetric oxygen transfer coefficient of the new bioreactor decreased with increasing cell density during E. coli fermentation.

• Korean Chemical Engineering Research
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• 제50권5호
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• pp.843-849
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• 2012

매체순환식 가스연소기 산소공여입자로 NiO 계열 산소공여입자를 사용할 경우 고온 조건(> $900^{\circ}C$)에서 온도가 증가함에 따라 환원반응 배출기체 중 CO 농도가 증가하게 되며, 이에 의해 연료전환율과 $CO_2$ 선택도가 감소하게 된다. 이러한 고온 환원반응성 저하를 개선하기 위한 방법으로 매체순환 가스연소기에 적용 가능한 금속산화물들에 대해 온도변화에 따른 평형 CO 농도를 계산 및 비교하여 반응성 개선이 가능한 금속산화물을 선정하였다. 선정된 금속산화물을 NiO 계열 산소공여입자와 물리적으로 혼합하는 방법을 적용하여 고온 환원반응성 개선이 가능한지를 회분식 유동층 실험장치를 이용하여 측정 및 해석하였다. $900{\sim}1000^{\circ}C$ 범위에서 기존 NiO 계열 입자(OCN706-1100) 만을 사용한 경우에 비해 $Co_3O_4$ 계열 입자($Co_3O_4/CoAl_2O_4$)를 10% 혼합한 경우가 연료전환율 및 $CO_2$ 선택도가 높게 나타났으며 환원반응 배출기체 중 CO의 농도가 감소하는 경향을 나타내어 $Co_3O_4$ 계열 산소공여입자를 함께 사용하는 방법으로 고온 환원반응성 개선이 가능함을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.