• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2001.11a
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• pp.93-98
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• 2001

• Macromolecular Research
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• v.12 no.6
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• pp.598-603
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• 2004

Cellulose nitrate (CN) composite membranes, containing cobalt porphyrin (CoP) complexes self-assembled within nanometer-sized rhenium clusters (ReCoP), have been prepared and their oxygen and nitrogen gas perme­abilities were analyzed. The solubility of ReCoP and the characteristics of the corresponding composite membranes were analyzed using a Cahn microbalance, FT-IR spectroscopy, wide-angle X-ray scattering, and differential scanning calorimetry. The nitrogen permeability through the CN composite membranes decreased upon addition of ReCoP and CoP, which implies that the presence of these oxygen carrier complexes affects the structure of the polymer matrix. The oxygen permeability through the composite membranes containing small quantities of ReCoP decreased, but it increased upon increasing the concentration. The oxygen gas transport was affected by the matrix at low ReCoP concentrations, but higher concentrations of ReCoP increased the oxygen permeability as a result of its reversible and specific interactions with oxygen, effectively realizing ReCoP carrier-mediated oxygen transport.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.4
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• pp.348-358
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• 2008

Reduction reactivity and carbon deposition characteristics of mass produced oxygen carrier particle(OCN-650) have been investigated by using hydrogen, methane, syngas, and natural gas as fuels. For all fuels, the maximum conversion and oxygen transfer capacity increased as the temperature increase. The reduction rate and the oxygen transfer rate increased as the temperature increase for methane. However, those values showed maximum at 900$^{\circ}C$ for hydrogen, syngas, and natural gas. To explain consistently the change of maximum conversion, reduction rate, oxygen transfer capacity, oxygen transfer rate and degree of carbon deposition for different fuels, new parameters such as reactive carbon contents and require oxygen per input gas were adopted.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.5
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• pp.554-560
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• 2017

Reduction reactivity of new oxygen carriers for chemical looping combustion system were investigated using $CH_4$ as a reduction gas in a bubbling fluidized bed reactor and compared with that of former SDN70 oxygen carrier. New oxygen carriers showed good reduction reactivity at different $CH_4$ concentration. N018-R2 particle represented better reactivity than SDN70 at high $CH_4$ concentration. N018-R2 particle showed higher fuel conversion and $CO_2$ selectivity than those of SDN70 particle within the temperature range of $750-900^{\circ}C$. Moreover, attrition loss of N018-R2 particle was almost same with that of SDN70 particle. Consequently, we could select N018-R2 particle as the best oxygen carrier.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.2
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• pp.213-222
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• 2011

To check adaptability of low ash coal(hyper coal) to chemical looping combustion, reaction characteristics of two coals (Roto and Hyper coal) with two oxygen carriers (NiO/bentonite, OCN703-1100) have been investigated in a thermogravimetric analyzer. Hyper coal represented low combustion rate and high ignition temperature, high volatile content and high devolatilization rate, and therefore, showed worse oxygen transfer during successive 10 cycle reduction-oxidation test than Roto coal. Finally we selected Roto coal as the candidate coal for chemical looping combustion. For Roto coal, OCN703-1100 particle showed better oxygen transfer than NiO/bentonite particle. During 10 cycle reduction oxidation test, change of the extent of oxidation (Wo) was negligible and we could conclude that both oxygen carriers have sufficient regeneration ability.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.5
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• pp.589-596
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• 2016

Effects of pressure, temperature, gas velocity, and fuel flow rate on reduction of three oxygen carriers, SDN70, OC-1, OC-2, were measured and investigated in a pressurized bubbling fluidized bed reactor. Among three oxygen carriers OC-2 was selected as the best oxygen carrier in view of fuel conversion and $CO_2$ selectivity. However, all oxygen carriers showed good reactivity even at high pressure conditions. SDN70 particle showed maximum reactivity at $900^{\circ}C$ and low reactivity at $950^{\circ}C$. However, reactivity decay of OC-1 and OC-2 particles at high temperature condition was negligible. The fuel conversion and the $CO_2$ selectivity slightly decreased as the gas velocity increased, whereas they are slightly increased as the fuel concentration increased.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.1
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• pp.90-96
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• 2018

Reaction characteristics and kinetics of a oxygen carrier (OCN717-R1SU) for chemical looping combustion (CLC) have been investigated using TGA by changing gas concentration (10-30 vol.% $CH_4$) and reaction temperature ($825-900^{\circ}C$). Reaction rate of OCN717-R1SU increased as temperature increased and it was found that reaction is delayed at the initial reaction regime. Johnson-Mehl-Avrami (JMA) model was adopted to explain the reaction phenomenon. The activation energy (E) determined by JMA model in reduction reaction of OCN717-R1SU is $151.7{\pm}2.03kJ/mol$ and pre-exponential factor and JMA exponent were also obtained. The parameters calculated in this study will be applied in design of the reactor and operation conditions for CLC process.