• 제목/요약/키워드: Oxygen Flow Rate

검색결과 689건 처리시간 0.025초

Blood Oxygen Level Sensor를 이용한 대뇌혈류증가 장치 (Cerebral blood flow enhancement device using Blood Oxygen Level Sensor)

  • 임정현;조인희;김영길
    • 한국정보통신학회논문지
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    • 제22권8호
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    • pp.1083-1089
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    • 2018
  • 대뇌혈류를 증가 시키는 수술은 뇌경색의 치료방법중 하나이다. 이러한 침습적인 방법을 보완하기 위해 사람의 혈압을 이용해, 사지에 압박을 가하여 대뇌 혈류를 증가 시키는 비 침습적인 장치도 등장하였다. 그러나 속도와 정확성이 떨어지는 문제점이 제기되었다. 본 논문에서는, 정확한 측정과 측정하는 데에 걸리는 시간을 기존의 장치보다 개선하기 위해, Blood Oxygen Level Sensor를 이용하여, 양팔에 압력을 주면서 각 팔의 Perfusion Index를 측정하여, Perfusion Index가 일정 값 이하로 떨어지는 순간의 75% 압력을 팔에 가하고, 다리에는 팔에서 구해진 압력 값을 이용해 계산하여 얻은 압력을 가한다. 기존의 혈압 측정식 대뇌혈류증가 장치와 같이, 혈류량을 20%이상 증가 시킬 수 있고, 또한 측정 시간도 단축한 결과를 얻어 뇌경색 환자에게 선택적으로 사용할 수 있다.

XRD의 결정구조로 살펴본 GZO 박막의 온도의존성 (Temperature Dependence of Bonding Structure of GZO Thin Film Analyzed by X-ray Diffractometer)

  • 오데레사
    • 반도체디스플레이기술학회지
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    • 제15권1호
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    • pp.52-55
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    • 2016
  • GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

Ar+O2 혼합가스 취입에 의한 용철의 탈탄 반응속도 (Decarbonization Kinetics of Molten Iron by Ar+O2 Gas Bubbling)

  • 손호상;정광현
    • 대한금속재료학회지
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    • 제47권2호
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    • pp.107-113
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    • 2009
  • Molten iron with 2 mass % carbon content was decarbonized at 1823 K~1923 K by bubbling $Ar+O_2$ gas through a submerged nozzle. The reaction rate was significantly influenced by the oxygen partial pressure and the gas flow rate. Little evolution of CO gas was observed in the initial 5 seconds of the oxidation; however, this was followed by a period of high evolution rate of CO gas. The partial pressure of CO gas decreased with further progress of the decarbonization. The overall reaction is decomposed to two elementary reactions: the decarbonization and the dissolution rate of oxygen. The assumptions were made that these reactions are at equilibrium and that the reaction rates are controlled by mass transfer rates within and around the gas bubble. The time variations of carbon and oxygen contents in the melt and the CO partial pressure in the off-gas under various bubbling conditions were well explained by the mathematical model. Based on the present model, it was explained that the decarbonization rate of molten iron was controlled by gas-phase mass transfer at the first stage of reaction, but the rate controlling step was transferred to liquid-phase mass transfer from one third of reaction time.

반응표면 기법을 이용한 생물반응조 표면포기기 최적설계 (Optimum Design of Surface Aerator Using Response Surface Method)

  • 윤정환
    • 한국가시화정보학회지
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    • 제7권2호
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    • pp.47-55
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    • 2010
  • In this study, we optimized the shape of the surface aerator that will be installed in a biological reactor using the response surface method. Response surfaces of mass flow rate, impeller torque, mass flow rate per impeller torque are generated and used to track the optimum shape of the aerator. MOGA(Multi-Objective Genetic Algorithm)method is adopted to find the optimum results. By increasing the mass flow rate per impeller torque, increase of oxygen supply efficiency to a reactor is anticipated. To verify the usability of the surface aerator, PIV measurements on flow fields inside a scale-downed biological reactor model are carried out.

DC magnetron sputtering 방법으로 형성한 Indium-Tin-Oxide(ITO) 박막의 특성 연구 (A Study on the Properties of Indium-Tin-Oxide(ITO) Films Deposited by DC magnetron sputtering method)

  • 안명환
    • 한국정보통신학회논문지
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    • 제10권3호
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    • pp.473-478
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    • 2006
  • DC 마그네트론 스퍼터링 방법으로 ITO 박막을 형성하였다. 박막 형성 시 스퍼터 전압을 변화시켜 음이온에 의한 손상을 최소화하였으며, 또한 기판온도와 산소유입량을 변화시켜 비저항 $1.6\times10^{-4}{\Omega}cm$, 광투과도 90% 이상의 값을 갖는 양질의 박막을 형성 할 수 있었다. 박막 형성 시 $O_2$ 가스의 유량이 4sccm 이상으로 산소공급이 과다할 경우는 ITO 박막의 비저항이 증가하고, 광 투과도가 포화됨을 알 수 있었다.

Energetics of the Heart Model with the Ventricu1ar Assist Device

  • Chung, Chanil-Chung;Lee, Sang-Woo;Han, Dong-Chul;Min, Byoung-Goo
    • 대한의용생체공학회:의공학회지
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    • 제17권1호
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    • pp.43-48
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    • 1996
  • We investigated the energistics of the physiological heart model by comparing predictive indexes of the myocardial oxygen consumption (MOC), such as tension-time index (R), tension-time or force-time inteual (FTI), rate-pressure product (RPP), pressure-work index, and systolic pressure-volume area (PVA) when using the electro-hydraulic left ventricular device (LVAD). We developed the model of LVAD incorporated the closed-loop cardiovascular system with a baroreceptor which can control heart rate and time-varying elastance of left and right ventricles. On considering the benefit of the LVAD, the effects of various operation modes, especially timing of assistance, were evaluated using this coupled computer model. Overall results of the computer simulation shows that our LVAD can unload the ischemic (less contractile) heart by decreasing the MU and increasing coronary flow. Because the pump ejection at the end diastolic phase of the natural heart may increase the afterload of the left ventricle, the control scheme of our LVAD must prohibit ejecting at this time. Since the increment of coronary flow is proportional to the peak aortic pressure after ventricle contraction, the LVAD must eject immediately following the closure of the aortic valve to increase oxygen availability.

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Reactive sputtering 법으로 증착된 AZO 박막의 전기적 및 구조적 특성 (Electrical and structural characteristics of AZO thin films deposited by reactive sputtering)

  • 허주희;이유림;이규만
    • 반도체디스플레이기술학회지
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    • 제8권1호
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    • pp.33-38
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    • 2009
  • We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

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