• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.3-9
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• 2000

Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.1
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• pp.25-32
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• 2007

We investigated the silicide reaction stability between 10 nm-Col-xNix alloy films and silicon substrates with the existence of 4 nm-thick natural oxide layers. We thermally evaporated 10 nm-Col-xNix alloy films by varying $x=0.1{\sim}0.9$ on naturally oxidized single crystal and 70 nm-thick polycrystalline silicon substrates. The films structures were annealed by rapid thermal annealing (RTA) from $600^{\circ}C$ to $1100^{\circ}C$ for 40 seconds with the purpose of silicidation. After the removal of residual metallic residue with sulfuric acid, the sheet resistance, microstructure, composition, and surface roughness were investigated using a four-point probe, a field emission scanning electron microscope, a field ion bean4 an X-ray diffractometer, and an Auger electron depth profiling spectroscope, respectively, to confirm the silicide reaction. The residual stress of silicon substrate was also analyzed using a micro-Raman spectrometer We report that the silicide reaction does not occur if natural oxides are present. Metallic oxide residues may be present on a polysilicon substrate at high silicidation temperatures. Huge residual stress is possible on a single crystal silicon substrate at high temperature, and these may result in micro-pinholes. Our results imply that the natural oxide layer removal process is of importance to ensure the successful completion of the silicide process with CoNi alloy films.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.111-114
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• 2003

Effects of substrate materials on the microstructure and the sensitivity of $SnO_2$thin film gas sensors have been studied. Various substrates were studied, such as oxidized silicon, sapphire, polished alumina, and unpolished alumina. It was observed that strong correlation exists between the electrical resistance and the CO gas sensitivity of the manufactured sensors and the surface roughness of $SnO_2$thin films, which in turn was related to the surface roughness of the original substrates. X$SnO_2$thin film gas sensor on unpolished alumina with the highest surface roughness showed the highest initial resistance and CO gas sensitivity. The transmission electron microscopy observation indicated that shape and size of the columnar microstructure of the thin films were not critically affected by the type of substrates.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.11-18
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• 2002

This paper presents a CPW phase shifter and shunt stub with air-bridge on a 10-${\mu}m$-thick oxidized porous silicon(OPS) substrate using surface micromachining. The line dimensions of the CPW phase shifter was designed with S-W-Sg = 100-30-400 ${\mu}m$. And the width and length of the air-bridge with "ㄷ“ shape were 100 ${\mu}m$ and 400-460-400 ${\mu}m$, respectively. In order to achieve low attenuation, stepped air-bridge CPW phase shift was proposed. The insertion loss of the stepped air-bridge CPW phase shift is more improved than that of no stepped air-bridge CPW phase shift. The measured phase characteristic of the fabricated CPW phase shifter is close to 180$^{\circ}$ over a very broad frequency range of 28 GHz. The measured working frequency of short-end series stub is 28.7 GHz and the return loss is - 20 dB. And the measured working frequency of short-end shunt stub is 28.9 GHz and the return loss is - 23 dB at midband. As a result, the pattering of stub in the center conductor of CPW lines can offer size reduction and lead to high density chip layouts.

• Journal of Korea Foundry Society
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• v.40 no.6
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• pp.135-145
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• 2020

Aluminum cast iron has excellent oxidation resistance, sulfurization resistance, and corrosion resistance. However, the ductility at room temperature is insufficient, and at temperatures above 600?, the strength drops sharply and practicality is limited. In the case of heat-resistant cast iron, high-temperature materials containing Cr and Ni account for 30 to 50% or more. However, these high-temperature materials are expensive. Aluminum heat-resistant cast iron is considered as a substitute for expensive heat-resistant materials. Oxidation due to the aging temperature and holding time conditions increases more in 0 wt.% Al-cast iron than in 2 and 4 wt.% Al-cast iron according to oxidized weight and gravimetric oxide layer thickness measurements. As a result of observing the cross-section of the oxide layer, it was found to contain 0 wt.% of Al-cast iron silicon oxide-containing SiO₂ or Fe₂SiO₄ oxide film. In cast iron containing aluminum, the thickness of the internal oxide layer due to aluminum increases as the aging temperature and retention time increase, and the amount of the iron oxide layer generated on the surface decreases.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.342-349
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• 2002

New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.168-172
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• 2001

Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 $^{\circ}C$ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 nm and the grain size was about 40 nm for annealing temperatures over 600 $^{\circ}C$. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 $^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.22-28
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• 1992

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.