• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.522-526
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• 2007

Structural features and electrochemical performances of cokes pyrolized from oxidized cokes were examined, and compared with KOH-activated coke. Needle cokes ($d_{002}=3.5{\AA} $), having a graphene layer structure, were changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an $NaCLO_3$/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized coke was expanded to $6.9{\AA} $ with increasing oxygen content. After heating at $200^{\circ}C$, the oxidized coke was pyrolized to the graphene layer structure with inter-layer distance of $3.6{\AA} $. However, the change of the inter-layer distance of the needle coke was not observed in the KOH activation process. On the other hand, an intercalation of electrolyte ions into the pyrolized coke, observed at first charge, occurred at 1.0 V, in which the value was lower than that of KOH-activation coke. The cell capacitor using pyrolized coke exhibited a lower internal resistance of $0.57{\Omega}$ in 1 kHz, and a larger capacitance per weight and volume of 30.3 F/g and 26.9 F/ml at the two-electrode system in the potential range 0~2.5 V than those of the cell capacitor using KOH-activation of coke. This better electrochemical performance may be associated with structure defects in the graphene layer derived from the process of the inter-layer expansion and shrinkage.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1066-1068
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• 1995

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1588-1598
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• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Journal of Powder Materials
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• v.20 no.6
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• pp.432-438
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• 2013

In this study, analysis on the oxidation behavior was conducted by a series of high-temperature oxidation tests at both $800^{\circ}C$, $900^{\circ}C$ and 1000 in the air with sintered STS 316L. The weight gain of each oxidized specimen was measured, the oxidized surface morphologies and composition of oxidation layer were analyzed with Scanning Electron Microscope-Energy Dispersive x-ray Spectroscopy (SEM-EDS), finally, the phase change and composition of the oxidized specimen were shown by X-Ray Diffraction (XRD). As a result, the weight gain increased sharply at $1000^{\circ}C$ when oxidation test was conducted for 210 hours. Also, a plentiful of pores were observed in the surface oxidation layers at $900^{\circ}C$ for 210 hours. In addition, the following conclusions on oxidation behavior of sintered STS 316L can be obtained: $Cr_2O_3$ can be formed on pores by influxing oxygen through open-pores, $(Fe_{0.6}Cr_{0.4})_2O_3$ can be generated on the inner oxidation layer, and $Fe_2O_3$ was on the outer oxidation layer. Also, $NiFe_2O_4$ could be precipitated if the oxidation time was kept longer.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.2_2
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• pp.397-402
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• 2024

Silicon carbide materials undergo an oxidation reaction in a high-temperature oxidizing environment and show different characteristics depending on the test temperature and time. In particular, the added oxides form a secondary phase within the sintering process and exhibit different oxidation characteristics depending on the added sintering materials. Therefore, to evaluate the oxidation characteristics, the weight of the test piece and the thickness of the oxidation layer were observed, and the structure and oxidation characteristics of the material were analyzed using SEM. SEM observation showed that an oxide layer was formed on the surface of the liquid sintered silicon carbide material after it was oxidized at 1200 ℃, 1300 ℃, and 1400 ℃ for 10 hours, respectively. Then, a bending test was performed at each temperature on the test piece with the oxidation layer formed to evaluate the change in flexural strength. The strength was 466.6 MPa at 1200 ℃, 363.1 MPa at 1300 ℃, and 350.8 MPa at 1400 ℃. Al₂O₃-SiO₂ oxidized at 1200 ℃ for 10 hours showed an increase in strength of about 21.0 MPa compared to the data before the oxidation test.

• Journal of Hydrogen and New Energy
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• v.2 no.1
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• pp.47-56
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• 1990

Pure titanium rods were oxidized by anodic oxidation, furnace oxidation and flame oxidation and used as a electrode in the photodecomposition of water. The maximum photoelectrochemical conversion efficiency(${\eta}$) was found for flame oxidized electrode ($1200^{\circ}C$ for 2 min in air), 0.8 %. Anodically oxidized electrodes have minimum photoelectrochemical conversion efficiencies, 0.3 %. Furnace oxidized electrode ($800^{\circ}C$ for 10min in air) has 0.5% phtoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The efficiency shows a parallelism with the presence of the metallic interstitial compound $TiO_{O+X}$(X < 0.33) at the metal-semiconductor interface, the thickness of the sub oxide layer and that of the external rutile scale.

• Corrosion Science and Technology
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• v.17 no.2
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• pp.45-53
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• 2018

A new 80Ti-15Ta-5Zr wt% alloy surface was protected by anodic oxidation in phosphoric acid solution. The protective oxide layer (TiO2, ZrO2 and Ta suboxides and thickness of 15.5 nm) incorporated $PO{_4}^{3-}$ ions from the solution, according to high resolution XPS spectra. The AFM analysis determined a high roughness with SEM detected pores (20 - 50 nm). The electrochemical studies of bare and anodically oxidized Ti-15Ta-5Zr alloy in Carter-Brugirard saliva of different pH values and saliva with 0.05M NaF, pointed to a nobler surface for the protected alloy, with a thicker electrodeposited oxide layer acting as a barrier against aggressive ions. The oxidized alloy significantly decreased corrosion current densities and total quantity of ions released into the oral environment in comparison with the bare one, at higher polarisation resistance and protective capacity of the electrodeposited layer. The impedance data revealed a bi-layered oxidation film formed by: a dense, compact, barrier layer in contact with the metallic substrate, decreasing the potential gradient across the metal/oxide layer/solution interface, reducing the anodic dissolution and a more permissive, porous layer in contact with the electrolyte. The open circuit potential for protected alloy shifted to nobler values, with thickening of the oxidation film signifying long-term protection.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.109-116
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• 2016

To achieve the fabrication of high-quality Ag-coated Cu particles through a wet chemical process, we reported herein pretreatment conditions using an ammonium-based mixed solvent for the removal of a $Cu_2O$ layer on Cu particles that were oxidized in air for 1 hr at $200^{\circ}C$ or for 3 days at room temperature. Furthermore, we discussed the results of post-Ag plating with respect to removal level of the oxide layer. X-ray diffraction results revealed that the removal rate of the oxide layer is directly proportional to the concentration of the pretreatment solvent. With the results of Auger electron spectroscopy using oxidized Cu plates, the concentrations required to completely remove 50-nm-thick and 2-nm-thick oxides within 5 min were determined to be X2.5 and X0.13. However, the optimal concentrations in an actual Ag plating process using Cu powder increased to X0.4 and X0.5, respectively, because the oxidation in powder may be accelerated and the complete removal of oxide should be tuned to the thickest oxide layer among all the particles. Back-scattered electron images showed the formation of pure fine Ag particles instead of a uniform and smooth Ag coating in the Ag plating performed after incomplete removal of the oxide layer, indicating that the remaining oxide layer obstructs heterogeneous nucleation and plating by reduced Ag atoms.