• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.247-252
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• 2012

Crystal structure and chemical compositions of Plasma electrolytic oxidized layer of A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for plasma electrolytic oxidation was mixture of distilled water, $Na_2P_2O_7$, Cu, Cr metal salts and KOH. ${\eta}$-Alumina, as well as ${\alpha}$-alumina, was main crystal phase. Another crystals such as $(Al_{0.948}Cr_{0.052})_2O_3$ and $(Al_{0.9}Cr_{0.1})_2O_3$ were also formed in the oxide layer. It was thought that the effect of electrolyte compositions on the physical properties and crystal system of PEO layers was greater than the effect of Al alloy composition variation.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of Hydrogen and New Energy
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• v.20 no.2
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• pp.116-124
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• 2009

We investigated the influences of cobalt coating deposited by DC electroplating on the ferritic stainless steel, STS 430, as a protective layer on a metallic interconnect for SOFC applications. Cobalt coated STS 430 revealed a uniform and denser-packing oxide surface and a reduced growth rate of $Cr_2O_3$ scales after oxidation at $800^{\circ}C$in air. Cobalt coating layer was oxidized to $CoCo_2O_4$ and Co containing mixed oxide spinels such as $Co_2CrO_4$, $CoCr_2O_4$, and $CoCrFeO_4$. The area specific resistance value of Co coated sample was $0.020\;{\Omega}cm^2$ lower than that of uncoated at $800^{\circ}C$ in air during 500 h. After 1000 h oxidation, cobalt oxide coating layer suppressed chromium outward diffusion.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.672-677
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• 1998

The following work examines the growth rate and microstructure of the $AI_2O_3$-composite formation by melt oxdation of pentad AI-alloys. The I weight % of each metal elements Cu and Ni were added to AI-IMg-3Si-3Zn and AI-IMg- 3Si-5Zn alloys. The diffenent pentad AI-alloys were oxidized 20 hours long at 1373K and 1473K. The oxidation rates were determined by observing the weight gain. The macro- and microstructure of formed oxide layer were examined by optical microscopy. The AI-IMg-3Si-5Zn-lCu alloy revealed the best oxidation behavior, but formedoxide layer was inhomogeneous.The oxidation rate were accelerated, and the uniform growth of the oxide layer with fine microstructure were obtained by putting a thin layer of $SiO_2$ on the surface of the alloy.

• Archives of Metallurgy and Materials
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• v.66 no.3
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• pp.695-698
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• 2021

Influence of Si addition on oxide layer growth of Al-6 mass%Mg alloys in molten state was investigated in this study. After melt holding for 24 h, the melt surface of only Si-free alloy became significantly bumpy, while no considerably oxidized surface was observed even with 1 mass%Si addition. There was no visible change on the appearance of melt surfaces with increasing Si content. As a result of compositional analysis on the melt samples between before and after melt holding, the Si-added alloys nearly maintained their Mg contents even after the melt holding for 24 h. On the other hand, the Mg content in the Si-free alloy showed a great reduction. The bumpy surface on Si-free alloy melt showed a large amount of pores and oxide clusters in its cross-section, while the Si-added alloy had no significantly grown oxide clusters on the surfaces. As a result of compositional analysis on the surfaces, the oxide clusters in Si-free alloy contained a great amount of Mg and oxygen. The oxide layer on the Si-added alloy was divided into Mg-rich and Mg-poor areas and contained certain amounts of Si. Such a mixed oxide layer containing Si would act as a protective layer during the melt holding for a long duration.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.3
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• pp.235-243
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• 2014

Surface oxidation behavior of ZIRLO (ZIRconium Low Oxidation) hulls was investigated using an X-ray photoelectron spectroscopy (XPS) technique. The effects of oxidation time (10-336 h at $500^{\circ}C$) and temperature ($400-700^{\circ}C$ for 10 h) were studied. Deconvolution results of the hulls oxidized at $500^{\circ}C$ revealed that a $ZrO_2$ phase appeared after 24 h (11.86%), and an increase in the $ZrO_2$ ratio was observed when the hulls were oxidized for 336 h (17.93%). On the other hand, the ZrO phase which employed 5.68% in the 10 h oxidized sample disappeared when the oxidation time increased to 24 h. The XPS results also showed that an increase in the oxidation temperature resulted in an increase in the ratio of ZrO, which increased from 0 to 5.68, 8.31, and 9.16% when the oxidation temperature increased from 400 to 500, 600, and $700^{\circ}C$, respectively. $ZrO_2$ phase was observed only in the sample that was oxidized at $700^{\circ}C$. The mechanism of ZrO formation was not conclusive, but it was suggested that a formation of hydroxide might have been accelerated at elevated temperatures leading to a formation of a $Zr(OH)_4$ phase. The relationship between the surface oxidation status of the hulls oxidized at $500^{\circ}C$ and their chlorination reaction feasibility was discussed, and it was suggested that the thickness of the oxide layer is an important parameter that determines the chlorination reaction feasibility.

• Journal of Powder Materials
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• v.9 no.6
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• pp.433-440
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• 2002

Synthesis and compaction of Al-base nano powders by pulsed discharge method were investigated. The aluminum based powders with 50 to 200 nm of diameter were produced by pulsed wire evaporation method. The powders were covered with very thin oxide layer. The perspective process for the compaction and sintering of nanostructured metal-based materials stable in a wide temperature range can be seen in the densification of nano-sized metal powders with uniformly distributed hard ceramic particles. The promising approach lies in utilization of natural uniform mixtures of metal and ceramic phases, e.g. partially oxidized metal powders as fabricated in our synthesis method. Their particles consist of metal grains coated with oxide films. To construct a metal-matrix material from such powder, it is necessary to destroy the hard oxide coatings of particles during the compaction process. This goal was realized in our experiments with intensive magnetic pulsed compaction of aluminum nanopowders passivated in air.

• Proceedings of the KWS Conference
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• 2000.10a
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• pp.256-259
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• 2000

High viscosity mixing powder is a very useful material for laser cladding. This material has a high viscosity so that it can be sticked to substrate. Therefore, Laser cladding can be performed on a curved or slope surface. Laser cladding can be easily performed with the material instead of wire that is difficult to be manufactured in some case. In this experiment, it was used a high viscosity mixing powder which consists of a high temperature flux and a bronze powder. And AC2B alloy material was used as a substrate. Flux prevents the clad layer from being oxidized and increases bonding property between substrate and cladding material. It makes possible to laser cladding at low level energy.