• 한국재료학회지
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• 제12권3호
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• 한국자기학회지
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• 제12권4호
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• pp.127-131
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• 2002

자성터널접합(magnetic tunnel junction: MTJ)소자의 AlO$_{x}$터널장벽 절연층을 플라즈마 산화법으로 2번에 나누어 금속증착.산화를 반복하여 만들어 보았다. 이중산화I그룹은 10A의 $\AA$의 Al 하부 절연막을 증착하고 산화시간을 10 s로 완성한 후 그 위에 13$\AA$의 Al을성막하고 50, 80, 120s간 산화시켜 완성한 절연막의 특성을 알아보았다. 이중산화II그룹은 10$\AA$봐 Al하부 절연막의 산화시간을 30~120 s간 달리하고 그 위에 13 $\AA$의 Al을 성막하고 210 s간 산화시켜 완성한 절연막의 특성을 알아보았다. 이중산화공정으로 제조된 시편은 전 실험범위에서 자기저항비(magnetoresistance： MR)는 27% 이상으로 우수하였고, 이는 13 $\AA$의 Al을 증착하고 한번만 산화시키는 통상의 단일산화에 비해 MR비가 우수하고 공정범위가 넓었다. 수직단면 투과전자현미경(transmission electron microscope： TEM)으로 미세구조를 확인한 결과 이중산화가 단일산화보다도 더 얇고 균일한 두께를 유지함을 알 수 있었다 X선광전자분석(X-ray photoelectron spectroscopy： XPS)으로 확인한 결과 이중산화는 절연막층 하부 CoFe 자성층의 Fe의 산화를 방지하여, 결과적으로 단일산화법에 비해서 하부자성층의 산화를 방지하여 긴 산화시간 공정 범위에서도 우수한 MR비를 가질 수 있었다.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.151-152
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• 2002

An oxidized surface layer was intentionally formed on a sputtered $MoS_2$ film by introducing oxygen gas in the final stage of sputtering process. The film showed longer life than the normal Ar-sputtered film when the surface layer was slightly oxidized. A XPS analysis revealed co-existence of $MoS_2$ and $MoO_3$ in the surface layer. suggesting that the existence of some amount of oxides in the surface layer had beneficial effect. A confusing result was obtained: the life was much shorter than normal Ar-sputtered film when the film was exposed to $O_2$ environment for 1 minute after normal Ar-sputtering, although almost no oxide was detected in XPS analysis.

• 센서학회지
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• 제8권2호
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• pp.202-209
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• 1999

본 연구에서는 기존의 열산화막과 거의 버금가는 전기적 및 화학적인 성질을 가진다고 알려져 있는 다공질 실리콘 산화막을 이용하여 마이크로스트립 전송선을 제작하였다. 실리콘 기판의 결정상태를 유지하면서 표면적과 화학적 활성이 큰 다공질 실리콘층(porous silicon layer)을 형성한 다음, 이를 열산화 하여 수 십 ${\mu}m$ 두께의 산화막을 실리콘 기판 상에 제조하였다. 수십 ${\mu}m$ 이상의 양질의 산화막을 얻기 위한 다공질 실리콘의 산화시에 스트레스에 의한 웨이퍼의 휘어짐을 방지하기 위하여 다단계의 열산화 공정을 수행하였다. 제조된 실리콘 산화막 상에 마이크로스트립 전송선을 제작하고 그 마이크로웨이브 특성을 측정하여 MMIC 기판으로서의 응용 가능성을 조사하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1999년도 제3회 압연심포지엄 논문집 압연기술의 미래개척 (Exploitation of Future Rolling Technologies)
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• pp.412-422
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• 1999

Scale defects generated on the strip surface in a tandem finishing mill line are collected from the strip trapped among the production mills by freezing the growing scale on the strip by the melt glass coating and shutting down the line simultaneously. The samples observed of its cross sectional figure showed the process of scale defect formation where the defects are formed at the base metal surface by thicker oxidized scale during each rolling passes. The properties of the oxidized layer growth both at rolling and inter-rolling are detected down sized rolling test simulating carefully the rolling condition of the production line. The thickness of the oxidized layer at each rolling pass are simulated numerically. The critical scale thickness to avoid the defect formation is determined through the expression of mutual relation between oxidized layer thickness and the lanks of the strip called quality for the scale defects. The scale growth of scale less than the critical thickness and also to keep the bulk temperature tuning the water flow rate and cooling time appropriately. Two units of Inerstand Cooler are designed and settled among the first three stands in the production line. Two units of scale defect is counted from the recoiled strip and the results showed distinct decrease of the defects comparing to the conventionaly rolled products.

• 대한전기학회논문지
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• 제45권1호
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• pp.93-99
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• 1996

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

• 한국분말재료학회지
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• 제19권3호
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• pp.196-203
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• 2012

$TiO_2$ was successfully formed on a Ti specimen by MAO (Micro-Arc-Oxidation) method treated in $Na_3PO_4$ electrolyte. This study deals with the influence of voltage and working time on the change of surface microstructure and phase composition. Voltage affected the forming rate of the oxidized layer and surface microstructure where, a low voltage led to a high surface roughness, more holes and a thin oxidized layer. On the other hand, a high voltage led to more dense surface structure, wider surface holes, a thick layer and fewer holes. Higher voltage increases photocatalytic activity because of better crystallization of the oxidized layer and good phase composition with anatase and rutile $TiO_2$, which is able to effectively separate excited electrons and holes at the surface.

• 대한전자공학회논문지SD
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• 제40권8호
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• pp.560-564
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• 2003

본 논문에서는 RTP(rapid thermal process)를 이용한 새로운 산화방법을 고안했으며, 이는 짧은 시간에 다공질 실리콘을 산화시킴으로써 이 기술은 여타 방법에 비해 경제적이고 간편한 방법으로 짧은 시간에 두꺼운 산화막을 성장시킬 수 있는 장점을 가지고 있다. 먼저, 양극반응을 통해 PSL(porous silicon layer)을 형성한 후 이를 저온 산화시킨 후에 급속 열처리 산화공정(RTO: rapid thermal oxidation)를 이용해서 OPSL(oxidized porous silicon layer)을 제조하고, 그 물성 및 전기적 특성을 조사하여, 열 산화로 제작된 OPSL과 그 특성을 비교하였다. 시편의 절연 파괴전압은 약 3.9 MV/cm의 값을 보여 벌크 산화막보다는 적은 값이지만 절연 재료로서는 충분한 값이고, 누설전류는 0 ∼ 50 V의 인가 전압에서 100 ∼ 500 ㎀의 값을 보였다. 그리고, XPS 결과는 RTO 공정 추가가 저온 산화막의 완전 산화에 크게 기여함을 확인하였으며, 저온 산화막의 표면 및 내부에서도 산화반응이 완전하게 이루어졌음을 확인하였다. 이 결과로부터 저온 OPSL을 제조할 때, RTO 공정이 OPSL의 산화 및 치밀화(densification)의 증가에 크게 기여함을 알 수 있었다. 따라서, 이의 방법으로 제조된 OPSL은 저온을 요구하는 공정에서 소자의 절연막, 전기적인 분리층 그리고 실리콘 고주파용 기판 등으로 활용될 수 있을 것으로 보인다.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.225-230
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• 2016

Effect of electrolyte composition and concentration on PEO coating layer were investigated. Mg alloy, Surface of AZ31 and AZ91 were oxidized using PEO with different electrolyte system, Na-P and Na-Si. and applied voltage and concentration. We measured thickness, roughness, X-ray crystallographic analysis and breakdown voltage of the oxidized layer. When increasing concentration of electrolyte, the thickness of oxide layer also increased too. And roughness also increased as concentration of electrolyte increasing. Breakdown voltage of coated layer showed same behavior, the voltage goes high as increasing thickness of coating layer, as increasing concentration of electrolyte, and increasing applied voltage of PEO. $Mg_2SiO_4$ phase were observed as well as MgO.