• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.813-815
• /
• 2008

We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.336.2-336.2
• /
• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.6
• /
• pp.408-411
• /
• 2018

We fabricated highly flexible Mn-doped $SnO_2$ (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was $47.54{\times}10^{-3}{\Omega}^{-1}$ for the dilution ratio of 1:130.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.4
• /
• pp.32-43
• /
• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.5
• /
• pp.500-506
• /
• 2024

The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.6
• /
• pp.341-344
• /
• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• ETRI Journal
• /
• v.42 no.6
• /
• pp.912-921
• /
• 2020

Quantum-dot cellular automata (QCA) is an alternative complementary metal-oxide-semiconductor (CMOS) technology that is used to implement high-speed logical circuits at the atomic or molecular scale. In this study, an optimal 2-to-4 decoder in QCA is presented. The proposed QCA decoder is designed using a new formulation based on the MV32 gate. Notably, the MV32 gate has three inputs and two outputs, which is equivalent two 3-input majority gates, and operates based on cellular interactions. A multilayer design is suggested for the proposed decoder. Subsequently, a new and efficient 3-to-8 QCA decoder architecture is presented using the proposed 2-to-4 QCA decoder. The simulation results of the QCADesigner 2.0.3 software show that the proposed decoders perform well. Comparisons show that the proposed 2-to-4 QCA decoder is superior to the previously proposed ones in terms of cell count, occupied area, and delay.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.36 no.4
• /
• pp.259-265
• /
• 2016

This paper presents a study on the use of pulsed phase thermography in the measurement of thermal barrier coating thickness with a numerical simulation. A multilayer heat transfer model was ussed to analyze the surface temperature response acquired from one-sided pulsed thermal imaging. The test sample comprised four layers: the metal substrate, bond coat, thermally grown oxide and the top coat. The finite element software, ANSYS, was used to model and predict the temperature distribution in the test sample under an imposed heat flux on the exterior of the TBC. The phase image was computed with the use of the software MATLAB and Thermofit Pro using a Fourier transform. The relationship between the coating thickness and the corresponding phase angle was then established with the coating thickness being expressed as a function of the phase angle. The method is successfully applied to measure the coating thickness that varied from 0.25 mm to 1.5 mm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.147-147
• /
• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.