• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.865-871
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• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.229-232
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• 2000

C-axis oriented zinc oxide thin films were deposited on glass substrate by reactive Facing Targets Sputtering (FTS) system. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alphastep (Tencor) analyses. The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature $300^{\circ}C$, inter targets distance 100mm. In the conditions, the rocking curve of zinc oxide thin films deposited on ZnO/Glass was $3.9^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.55-62
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• 2024

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω^-1).

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.985-987
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• 2004

A plastic substrate for flexible display is developed. The gas barrier property in the substrate is improved through depositing metal and metal oxide multi layer on plastic film by PVD process. The metal/metal-oxide multiplayer on plastic film shows excellent gas barrier property and optical property.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.