• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1087-1090
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• 2004

Samples of yttrium oxide doped with trivalent europium have been prepared by ceramic techniques, under different synthesis conditions; barium chloride ($BaCl_2$) and sodium tetraborate ($Na_2B_4O_7$) were tested as flux. The improvement of luminescence properties in dependence on substitution of $Eu^{3+}$ for $Y^{3+}$ in the host lattice, under electron and UV excitations is demonstrated The obtained results are discussed with respect to the employed processing method.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.18-20
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• 2006

The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a life time test. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.408-408
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• 2008

EL(electro luminescent)은 밝기가 균일하고, 대면적화가 용이하고 플렉시블화가 가능한 소자로 활용될 수 있다는 장점을 가지고 있다. 특히 최근에는 휴대폰의 슬림화추세로 key pad용 백라이트 광원으로 빌리 사용되고 있다. EL 에 사용되는 형광체 파우더인 ZnS는 여러 종류의 dopant를 첨가 합성하여 여러 가지 컬러를 구현할 수 있다. ZnS모체는 적절한 온도조건에서 열처리하면, 첨가된 dopant가 아닌 자체결함에 기인하는 발광이 나타난다. 따라서 본 연구에서는 ZnS 모체파우더에 인위적으로 열처리 온도를 변화시켜가면서, 그에 따른 상변화를 관찰하였다. 또한 상변화로 따른 PL특성을 관찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.49-49
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• 2009

Phosphors with oxide host material, YAG:$Ce^{3+}$ and $(Ca,Sr,Ba)_2SiO_4:Eu^{2+}$ yellow phosphor, has been used for LED applications. The WLEDs using these phosphors are widely used for LCD backlighting, automobile, and general lighting applications since they have high conversion efficiency and good thermal and chemical stability which can meet necessary life time of LED products up to now. With advances of LED chip technology, the external quantum efficiency and driving current in chip get higher so that the phosphors for high power chip are required to maintain high conversion efficiency and stability at high temperature due to the heat dissipated from LED chips. In addition, higher color rendering index of LED lighting and color reproducibility of LCD than those of LEDs with single yellow phosphors are required. In order to overcome these technical issues rising from evolution of LED technology, new phosphors are in demand and nitride phosphors, one of the promising new candidate materials, will be discussed here.

• Journal of Biomedical Engineering Research
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• v.28 no.6
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• pp.756-767
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• 2007

For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.181-184
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• 2003

GaN계 청색 여기용 광원으로 최적인 $Y_{3}AI_{5}O_{12}:Ce$계 phosphor를 고상반응으로 제조하여 white LED용 yellow 형광체로 신뢰성을 검토하였다. 출발시료는 metal hydrous oxide로 합성한 분말에 활성제로서 $Ce^{3+}$ 이온의 농도를 변화시키면서 로내의 온도와 시간을 변수로 하여 형광체를 제조하였다. 그 결과 $1650^{\circ}C$에서 2시간 소성시킨 분말의 경우, 입자 크기가 $3{\mu}m$이하인 순수 YAG 형광체를 얻을 수 있었으며 $Ce^{3+}$이온농도를 변화시킨 결과 0.03~0.05mol% 일 때가 가장 우수하여 해외제품수준을 능가하는 우수한 발광특성을 나타내었다. 이때 CIE1931 색좌표 값은 x=0.385, y=0.433으로서 green yellow 색을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.155-159
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• 2007

Blue light-emitting phosphors having the excitation spectrum range of the medium-long ultraviolet ($280nm{\sim}400nm$) have been prepared by solid state reaction method. As a starting material the natural alkaline feldspar powder produced from the domestic mine field in Buyeo, Chungnam-do. The photoluminescence characteristics and crystal structures have been analyzed for the phosphor samples. The powder mixture of the natural alkaline feldspar and the rare-earth oxide was calcined at $800{\sim}1000^{\circ}C\;for\;3{\sim}4h$ in air. The calcined samples we fully ground at room temperature and then heat-treated in the mild reducing gas atmosphere of $5%H_2-95%N_2$ mixture at $1100{\sim}1150^{\circ}C\;for\;3{\sim}4h$. The natural alkaline feldspar material consists of the monoclinic orthoclase ($KAlSi_3O_8$) and the triclinic albite ($NaAlSi_3O_8$) phases. At the $0.5wt%Eu_2O_3$ addition the PL spectrum showed the maximum intensity and with further increase of $Eu_2O_3$ the PL intensity decreased. The albite phase disappeared in the $Eu_2O_3$ doped phosphors. The effect of the co-doped activator on the PL characteristics have been also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.171.2-171.2
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• 2015

Nowadays, trivalent rare-earth ($RE^{3+}$) ions activated metal oxides have been proved to be excellent host materials due to their various applications. Facile wet-chemical technique have been considered as the best synthetic route due its intensive interest in the preparation of nanostructures. Europium ion doped lanthanum hydroxide ($La(OH)_3:Eu^{3+}$) phosphors were synthesized by the facile wet chemical method using the hexamethylenetetramine (HMTA) as a mediated surfactant. The thermal behavior for the $La(OH)_3:Eu^{3+}$ phosphors was investigated by thermogravimetric and differential thermal analysis method. The morphological studies were measured by scanning electron microscope and transmission electron microscope measurements, indicating three-dimensional (3D) flower-like $La(OH)_3:Eu^{3+}$ nanorod bundles. After subsequent annealing process, the lanthanum oxide ($La_2O_3:Eu^{3+}$) phosphor exhibited similar kind of morphology. The synthesized $La(OH)_3:Eu^{3+}$ and $La_2O_3:Eu^{3+}$ samples were characterized by X-ray powder diffraction and Fourier transform infrared spectroscopy. Furthermore, photoluminescence and cathodoluminescence properties were studied in details.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.437-441
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• 2006

The red emitting OLEDs using $Alq_3$:Rubrene-GDI4234 phosphors have been fabricated and characterized . In the device fabrication, 2- TNATA [4,4',4' - tris (2- naphthylphenyl - phenylamino ) - tripheny lamine] as the hole injection material and NPB [N,N'-bis (1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as the hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum evaporation. And then, red color emissive layer was deposited using $Alq_3$ as the host material and Rubrene(5,6,11,12-tetraphenylnaphthacene)-GDI4234 as the dopants. finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:Rubrene-GDI4234/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Red OLEDs fabricated in our experiments showed the color coordinate of CIE(0.65, 0.35) and the maximum power efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.97-102
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• 2002

Recently, the phosphorescent organic light-emitting devices (OLEDs) have been extensively studied for their high internal quantum efficiency. In this study, we synthesised several phosphorescent metal complexes, and certified their composition using NMR. We also investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_{3}$. The devices with a structure of indium-tin-oxide(ITO)/N,N'-diphenyl-N,N'-(3-methylphenyI}-1,1'-biphenyl-4,4'-diamine (TPD)/metal complex doped in host materials/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/tris (8-hydroxyquinolinato) Aluminum($Alq_{3}$)/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of tris(2-phenylpyridine)iridium ($Ir(ppy)_{3}$), we fabricated several devices and investigated their characteristics.