• International Journal of Oral Biology
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• v.44 no.2
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• pp.55-61
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• 2019

The purpose of this study was to evaluate the effect of mangosteen extract complex (MEC; Garcinia mangostana L. and propolis extracts) on the inhibition of inflammation and prevention of alveolar bone loss using a ligature-induced periodontitis model. Rat molars were ligatured with silk, and $1{\mu}g/mL$ of lipopolysaccharide of Porphyromonas gingivalis was injected into the buccal and palatal gingivae of the teeth with or without treatment with the MEC. Changes in the expression levels of prostaglandin $E_2$ ($PGE_2$), interleukin-8 (IL-8), inducible nitric oxide synthase (iNOS), matrix metalloproteinase-8 (MMP-8), cyclooxygenase (COX)-1, and COX-2 in gingival tissues were evaluated using enzyme-linked immunosorbent assays. Alveolar bone loss around the ligated molars was examined using micro-computed tomography. The expression levels of $PGE_2$, IL-8, iNOS, MMP-8, COX-1, and COX-2 in gingival tissues were significantly reduced in the group treated with a mixture of $16{\mu}g$ of mangosteen extract powder and $544{\mu}g$ of propolis extract powder (ligation [Lig] + lipopolysaccharide extracted from P. gingivalis KCOM 2804 [L] + MEC 1:34). Additionally, alveolar bone loss was significantly reduced in the Lig + L + MEC 1:34 group compared with that in other groups. These results indicate that the MEC could be useful in preventing and treating periodontitis.

• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.543-546
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• 2000

Ferroeleclric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4$\mu$m. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.06%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively. The pyroelectric coefficient of the x=0.65 specimen sintered at 125$0^{\circ}C$ was 5.64$\times$10$^{-8}$ C/cm$^2$K, respectively.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Journal of the Korean Ceramic Society
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• v.16 no.1
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• pp.31-37
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• 1979

The middle point of composition within the system $MgO-Al_2O_3-SiO_2$ has been studied for applicability as ceramics dielectrics. A Kyul Sung Tale of high purity, magnesia clinker of Sam-wha chemical company, C.P. aluminium oxide, calcium carbonate, red lead, barium carbonate which was made into frit were used the raw materials. A number of steatite ceramics were prepared under carefully controlled condition and the water absorption, linear shrinkage, power factor, dielectric constant and dielectric loss were measured at elevated temperature. When we used magnesia clinker as flux, the quantity of this flux was 0.05mole, sintering temperature was continued for 2 hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose power factor was 0.142%, water absorption was zero, linear shrinkage was 8.76%, dielectric constant was 5.63, dielectric loss was 0.00799. When we used red lead as flux, the quantity of this flux was 0.033mole and 0.066mole, sintering temperature was continued for 2hrs. at 1, 26$0^{\circ}C$. From this conditions, we could get the data whose water absorption was zero, linear shrinkage was 8.03%, and 8.48%, power factor was 0.136% and 0.062%, dielectric loss was 0.0072 and 0.0037. When we used barium carbonate made into frit as flux, the quantity of this flux was 0.02mole, sintering temperature was continued for 2hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose water absoption was zero, linear shrinkage was 8.44%, power factor was 0.138%, dielectric constant was 5.69, dielectric loss was 0.0074.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.6
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• pp.533-539
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• 2010

Ni-YSZ supported button cells were prepared by spray-coating YSZ and screen-printing YSZ-LSM powder as an electrolyte and oxygen electrode on Ni-YSZ cermet disks. In order to identify the polarization loss mechanism in high temperature electrolysis current-voltage characteristics coupled with electrochemical impedance spectroscopy were investigated as a function of temperature, current load, and the humidity. The effects of the different current collectors of platinum and silver for oxygen electrodes were compared. With Ag current collector two polarization losses were distinguished. The high frequency component was attributed to the Ni-YSZ cermet which was less susceptible to temperature variation but increasing in loss with humidity. The lower frequency component was attributed to the LSM electrode. Platinum current collector led to a much lower polarization loss.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.41-47
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• 2012

This paper deals with the electrical characteristics related to power loss, equivalent resistance, and leakage currents flowing through new and deteriorated zinc oxide(ZnO) arrester elements subjected to the mixed DC and 60[Hz] AC voltages. The test specimens were deteriorated by 8/20[${\mu}s$] impulse current of 2.5[kA]. The leakage current-applied voltage($I-V$) characteristic curves of ZnO surge arrester elements were measured as a parameter of the ratio of the peak of 60[Hz] AC voltage to the peak of total voltage. As a consequence of test results, in case of the same applied voltage, the leakage currents flowing through the deteriorated ZnO arrester elements were higher than those flowing through the new ZnO surge arrester elements. The cross-over phenomenon in $I-V$ curves of ZnO surge arrester elements measured as a parameter of the mixed ratio of DC and AC voltages was observed at the low current domain. The effect of DC voltage on the leakage current flowing through ZnO surge arrester elements is pronounced at the same magnitude of test voltages. In addition, the larger the applied number of 8/20[${\mu}s$] impulse current of 2.5[kA] is, the greater the power loss is, in particular, the more severe the power loss increases at higher applied voltages.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.405-412
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• 2006

In order to realize a stably propagating flame in a narrow channel, flame instabilities resulting from flame-wall interaction should be avoided. In particular flame quenching is a significant issue in micro combustion devices; quenching is caused either by excessive heat loss or by active radical adsorptions at the wall. In this paper, the relative significance of thermal and chemical effects on flame quenching is examined by means of quenching distance measurement. Emphasis is placed on the effects of surface defect density on flame quenching. To investigate chemical quenching phenomenon, thermally grown silicon oxide plates with well-defined defect distribution were prepared. ion implantation technique was used to control defect density, i.e. the number of oxygen vacancies. It has been found that when the surface temperature is under $300^{\circ}C$, the quenching distance is decreased on account of reduced heat loss; as the surface temperature is increased over $300^{\circ}C$, however, quenching distance is increased despite reduced heat loss effect. Such abberant behavior is caused by heterogeneous surface reactions between active radicals and surface defects. The higher defect density, the larger quenching distance. This result means that chemical quenching is governed by radical adsorption that can be parameterized by oxygen vacancy density on the surface.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.340-348
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• 2011

Effects of various inorganic-metal oxide (Zr, Zn, Si, Al and Ca as promoters and stabilizers) additive on the reduction rate of iron oxide and the composition of forming hydrogen using the steam-iron cycle operation was investigated. The reduction rate of redox agent with additive was determined from weight change by TGA. The changes of weight loss and reduction rate according to redox agent with various additive affected the hydrogen purity and cycle stability of the process. The cyclic micro reactor showed that hydrogen purity exceeding 95% could be obtained by the water splitting with Si/Fe, Zn/Fe, Zr/Fe redox agents. The redox agents with these elements had an affect on redox cycle stability as a good stabilizer for forming hydrogen by the steam-iron process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.226-226
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• 2012

The electronic and electrical properties of nickel oxide (NiO) thin films were investigated by reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and Hall Effect measurements. REELS spectra revealed that the band gap of the NiO thin film was increased from 3.50 eV to 4.02 eV after annealing the sample at $800^{\circ}C$. Our XPS spectra showed that the amount of Ni2O3 decreased after annealing. The Hall Effect results showed that the doping type of the sample changed from n type to p type after annealing. The resistivity decreased drastically from $4.6{\times}10^3$ to $3.5{\times}10^{-2}$ ${\Omega}{\cdot}cm$. The mobility of NiO thin films was changed form $3.29{\times}10^3$ to $3.09{\times}10^5cm^2/V{\cdot}s$. Our results showed that the annealing temperature plays a crucial role in increasing the carrier concentration and the mobility which leads to lowering resistivity of NiO thin films.