• Journal of Powder Materials
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• v.15 no.3
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• pp.221-226
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• 2008

Silver coated copper composite powders were prepared by electroless plating method by controlling the activation and deposition process variables such as feeding rate of silver ions solution, concentration of reductant and molar ratio of activation solution $(NH_4OH/(NH_4)_2SO_4)$ at room temperature. The characteristics of the product were verified by using a scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic absorption (A.A.). It is noted that completely cleansing the copper oxide layers and protecting the copper particles surface from hydrolysis were important to obtain high quality Ag-Cu composite powders. The optimum conditions of Ag-Cu composite powder synthesis were $NH_4OH/(NH_4)_2SO_4$ molar ratio 4, concentration of reductant 15g/l and feeding rate of silver ions solution 2 ml/min.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.499-505
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• 2006

Field emission of GaN and GaP nanowires, synthesized by thermal chemical vapor deposition, and their emission stabilities under oxygen and argon environments were investigated. The field emission current of GaN nanowires was seriously deteriorated under oxygen environment, while that of GaP was not. Both wires did not show any noticeable change under argon environment. The existence of oxide outer shell layers in the GaP nanowires was proposed to be a main reason for this emission stability behavior. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from that of carbon nanotubes.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.666-670
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• 2001

To improve the corrosion resistance of separator wet-seal area which is the barrier of commercialization of molten carbonate fuel cell(MCFC), Ni/Y/Al coating layer was fabricated by Ni electroplating and Y, Al e-beam PVD on AISI 316L stainless steel. NiAlY alloy coating layer was formed by heat treatment in reduction atmosphere at $800^{\circ}C$ for 5hr. Immersion test in molten carbonate salt at $650^{\circ}C$ was performed on as- received AISI 316L stainless steel and NiAlY coated specimen. According to cross sectional SEM/EDS observations, corrosion resistance of separator wet-seal area was improved by formation of dense oxide layers of Al and Y.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.277-284
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• 2006

The alloys were prepared by a non-consumable vacuum arc melting and homogenized at $1050^{\circ}C$ for 24 hrs. Two kind of surface modifications were performed alkali treatment in 5.0M NaOH solution subsequent and heat treatment in vacuum furnace at $600^{\circ}C$, and were oxidizing treatment at the temperature range of 550 to $750^{\circ}C$ for 30 minutes. After surface modification, these samples were soaked in SBF which consists of nearly the same ion concentration as human blood plasma. Cytotoxicity tests were performed in MTT assay treated L929 fibroblast cell culture, using indirect methods. A porous and thin activated layer was formed on Titanium and Ti-8Ta-3Nb alloy by the alkali treatment. A bone-like hydroxyapatite was nucleated on the activated porous surfaces during the in vitro test. However, Ti-8Ta-3Nb alloys showed better bioactive properties than Titanium. According to XRD results, oxide layers composed of mostly $TiO_2$(rutile) phases. Cytotoxicity test also revealed that moderate oxidation treatment lowers cell toxicity and Ti-8Ta-3Nb alloy showed better results compared with Titanium.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.484-489
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• 2002

Hot-pressure sintered laminar composites with alumina/zirconia or mullite/zirconia as an outer layer and alumina/zircon (resulting in reaction-bonded mullite/zirconia during sintering) as an inner layer were fabricated by tape casting and lamination. Various forms of crack were observed in sintered laminar composites, these cracks included channel cracks in the outer layer, transverse cracks in the inner layer and interface cracks debonding interlayer. Based on detailed microscopic observations, the cracks were attributed to thermal expansion mismatch between the oxides consisting of the each layer. In particular, the interlayer and transverse cracks were confirmed in the laminates consisted of the mullite/zirconia system as the outer layers, however, those cracks were not observed in the alumina/zirconia system used. In addition, the crack propagation did not exhibit same behavior in the two kinds of outer layer when the indentation load was applied.

• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.34-39
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• 2009

In this study, a needle coke was oxidized in a mixture of dilute nitric acid and sodium chlorate ($NaClO_3$) solutions and followed by heat treatment. The samples were analyzed with using XRD, FESEM, elemental analyzer, BET, and Raman spectroscopy. Double layer capacitance was measured with the charge and discharge measurements. The consisting layers of the needle coke were expanded to single phase showing only (001) diffraction peak by the acid treatment for 24 hours. The oxidized coke returned to a graphite structure appearing (002) peak after heat treatment above $200^{\circ}C$. The structure returned could be more easily accessible to the ions by the first charge, and improve the double layer capacitance at the second charge. The two-electorde cell from acid treated coke and $300^{\circ}C$ heat treatment exhibited the maximum capacitances of 32.1 F/g and 29.5 F/ml at the potential of $0{\sim}2.5\;V$.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.250-256
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• 2017

A graphene electrode with a novel in-plane structure is proposed and successfully adopted for use in supercapacitor applications. The in-plane structure allows electrolyte ions to interact with all the graphene layers in the electrode, thereby maximizing the utilization of the electrochemical surface area. This novel structure contrasts with the conventional out-of-plane stacked structure of such supercapacitors. We herein compare the volumetric capacitances of in-plane- and out-of-plane-structured devices with reduced multi-layer graphene oxide films as electrodes. The in-plane-structured device exhibits a capacitance 2.5 times higher (i.e., $327F\;cm^{-3}$) than that of the out-of-plane-structured device, in addition to an energy density of $11.4mWh\;cm^{-3}$, which is higher than that of lithium-ion thin-film batteries and is the highest among in-plane-structured ultra-small graphene-based supercapacitors reported to date. Therefore, this study demonstrates the potential of in-plane-structured supercapacitors with high volumetric performances as ultra-small energy storage devices.