• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Economic and Environmental Geology
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• v.50 no.5
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• pp.375-387
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• 2017

Amphibolite-hosted Fe-Ti mineralization at the Soyeonpyeong Island, located in central western part of the Korean Peninsula is a typical orthomagmatic Fe-Ti oxide deposit in South Korea. The amphibolite intruded into NW-SE trending Precambrian metasedimentary rocks. Lower amphibolite is characterized by igneous layering, consisting of feldspar-dominant and amphibole-Fe-Ti oxide-dominant layers. The igneous layering shows complicated and/or sharp contact. In contrast, upper amphibolite has a more complicated lithofacies (garnet-bearing, coarser, and schistose), and massive Fe-Ti oxide ore alternates with schistose amphibolite. NS- and EW-trending fault systems lead to redistribute upper amphibolite-hosted Fe-Ti orebody and igneous layering of lower amphibolite, respectively. The whole-rock compositions of amphibolite and Fe-Ti oxide ore reflect their constituent minerals. Amphibolite shows significantly positive Eu anomalies whereas Fe-Ti oxide ore has weak negative Eu anomalies. Plagioclase (Andesine to oligoclase) and Fe-Ti oxide minerals have constant composition regardless of their distribution. Amphibole has a compositionally variable but it doesn't reflect the chemical evolution. Mineral compositions within individual layers and successive layers are relatively constant not showing any stratigraphic evolution. This suggests that there are no successive injections of Fe-rich magma or assimilation with Fe-rich country rocks. Contrasting Eu anomalies between amphibolite and Fe-Ti oxide ore also suggest that extensive plagioclase fractionation during early crystallization stage cause increase in $Fe_2O_3/FeO$ ratio and overall Fe contents in the residual magma. Thus, Fe-rich residual liquids may migrate at the upper amphibolite by filter pressing mechanism and then produce sheeted massive Fe-Ti mineralization during late fractional crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.85-85
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• 2013

A ceramic coating material with nano-sized silicon oxide on AISI 4340 steel for a thermal conductor at a high temperature was analyzed to find an optimum coating process. Average surface roughness of the coating layers prepared by dipping process was about $5.26{\mu}m$. Potassium silicate addition as a binder of the coating material tended to improve its hardness. A pencil scratch hardness testing showed that a loading more than 800 g made fragments of the coating layer.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.95.1-95.1
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• 2011

In this work, graphene was prepared by modified Hummers method and prepared graphene was applied to electrode materials for supercapacitor. In addition, to enhance the electrochemical performance of graphene, carbon black was deposited onto graphene via chemical reduction. The effect of the carbon black content incorporated on the electrochemical properties of the graphene-based electrodes was investigated. It was found that nano-scaled carbon black aggregates were deposited and dispersed onto the graphene by the chemical reduction of acid treated carbon black and graphite oxide. From the cyclic voltammograms, carbon black-deposited graphene (CB-GR) showed improved electrochemical performance, i.e., current density, quicker response, and better specific capacitance than that of pristine graphene. This indicates that the carbon black deposited onto graphene served as an conductive materials between graphene layers, leading to reducing the contact resistance of graphene and resulted in the increase of the charge transfer between graphene layers by bridge effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1216-1219
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• 2007

We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.249-252
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• 1997

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their possible application as large-area display-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue light-emitting multilayer organic electroluminescence devices were fabricated vsing Poly (9-vinylcarbaEole) (PVK) and 2- (4-tert-butylphenyl)-5-(4$^{#}$-bis-phenyl) 1,3,4-oxadiazole (PBO) as hole trasport and electron transport material, respectively, where trim(8-hyd roxyquinolinate) aluminum (Al $q_3$) was used as a luminescenct material. A cell structure of glass sub- strate/indume-tin-oxide(ITO)/PCK/Al $q_3$/PBD/Mg:In was employed. Blue emission peak at 510nm was observed with this cell structure.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.344-344
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• 2010

A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1563-1565
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• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.