Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.344-344
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- 2010
Electrical characteristic of $SiO_2/HfO_2/Al_2O_3$ (OHA) as engineered tunnel barrier with various heat treatment condition
$SiO_2/HfO_2/Al_2O_3$ (OHA) 터널 장벽의 열처리 조건에 따른 전기적 특성
- Son, Jung-Woo (Kwangwoon University) ;
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Cho, Won-Ju
(Kwangwoon University)
- Published : 2010.06.16
Abstract
A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.