• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.397-397
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• 한국표면공학회지
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• 제32권1호
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• pp.49-60
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• 1999

The protective oxide scales and coatings formed on high temperature materials must be preserved in high temperature atmosphere. And the thermal stresses induced by thermal cycling and the growth stresses by the formation of oxide scales can cause the loss of adherence and spalling of the oxide scales and coated layers. Among the coating processes Al diffusion coating is favored due to thermochemical stability and superior adherence in an hostile atmosphere. In this study, protective oxide forming element, Al was coated on Ni, Inconel 600 and 690 by diffusion coating process varying coating temperature and time. And the surface stability and adherence of oxide scales formed on those Al diffusion coated materials were evaluated by thermal cycling test. Al diffusion coated specimens showed superior cyclic oxidation resistance compared to bare ones and specimens coated for longer period had better cyclic oxidation resistance, due to the abundant amount of Al in the coated layer. Meanwhile Al diffusion coated Inconel 600 and 690 showed improved cyclic oxidation resistance by the effect of Al in the coated layer and Cr in the substrate. Comparing both Al diffusion coated Inconel 600 and 690, Al diffusion coated Inconel 690 maintained better adhesion between coated layer and substrate by virtue of the bridging effect resulting from the segregation of Cr in the interdiffusion zone.

• Corrosion Science and Technology
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• 제2권5호
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• pp.225-232
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• 2003

High temperature oxidation of SUS430 and SUS304 stainless steels in 16.7 kPa $O_2$ - 20.3 kPa $H_2O$ - balanced N2 atmosphere at 1273 K was studied focused on the scale spalling during cooling after an isothermal oxidation. Spalling of the oxide scale during cooling occurred only for SUS304 stainless steel. The oxide scale was composed of two layers and they detached at the interface between them. The reason for the spalling could not be explained only by thermal stresses applied to the specimen during heating and cooling. A new mechanism for scale spalling was proposed based on combination of thermal stresses and thermal shock caused by a fast Martensite transformation of substrate metal.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.355-358
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• 2016

We present the alignment characteristics of LC (liquid crystal) molecules on solution-derived HLO (hafnium lanthanum oxide) films fabricated using IB (ion-beam) irradiation. We then demonstrated that LC molecules can be homogeneously and uniformly aligned on the HLO film irradiated at an IB incident energy of 1.2 keV. Physicochemical analysis methods such as atomic force microscopy and X-ray photoelectron spectroscopy were used to verify the LC alignment mechanism on the IB-irradiated HLO film. In addition, the electro-optical performance of a TN (twisted-nematic) cell fabricated using the IB-irradiated HLO film exhibited characteristics superior to those of the conventional TN cell fabricated using a rubbed polyimide layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.544-547
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• 2004

Glass frits for dielectric layers are mostly used for screen printing process. Several additives have already been known to be well matched with lead-oxide glasses system. The use of lead oxide, however, creates environmental problems, so many recent studies on lead-free glasses compositions have been carried out. A study of the suitability between additives and lead-free glass system is needed. In this study, we have used a screen-printing method to make thick films of lead-oxide glass and lead-free glass using different additives, and analyzed and compared the transmittance of the thick films.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1459-1461
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• 1998

This paper provides the results of analysis of lightening arrester failed in the field. XRD was used for qualitative analysis and SEM for microstructure analysis of zinc oxide (ZnO) block. The failure of lightening arrester might occur due to the following reasons: the uneven size of zinc oxide grains and cement layers. the re-crystallization of zinc oxide grains resulting from electrical stress around impurities, and the presence of too large pores($\simeq$ 50 ${\mu}m$).

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.