• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.26-30
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• 2013

For the realization of high-k insulator, aluminum oxide ($Al_2O_3$) was deposited by using an oxygen ion beam assisted deposition (IBAD) during e-beam evaporation. From the thickness of the $Al_2O_3$ layer evaporated with IBAD process, it was possible to investigate the etching effect of ion beam at higher energies during e-beam evaporation. It was also possible to obtain a higher capacitance as a result of IBAD in spite of the reduced thickness of $Al_2O_3$.

• Journal of Technologic Dentistry
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• v.11 no.1
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• pp.83-88
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• 1989

This investigation was performed to evaluate the effect of four different preteatment techniques on the bond strength of porcelain to non-precious metal alloy. Samples of total of 40 were divided into 4 groups according to the 4 variables which included the 50$\mu$alumina oxide air abrasion, method, the as retention bead method, the L-retention bead method, the Etching method. The completed metal-porcelain samples were compressed in Instron loading machine until gross fracture occured to examine the effect of the complex variables on the bond strength of porcelain to non precious metal alloy. The result obtained were as follows : 1. The difference of bond strength according to four different pretreatment techniques was statistically significant(p<0.01). 2. The difference of bond strength between the ss-retention bead method and the L-retention bead method was not significant statistically(p>0.05) 3. The difference of bond strength between the retention bead method and the etching method was statistically significant(p<0.01). 4. The difference of bond strength between the retention bead method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01). 5. The difference of bond strength between the etching method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.503-504
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.641-642
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• 2011

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.271-279
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• 1993

Experiments on electorchemical etching of aluminum foils with high cubic textures were carried out in this study. Etching behaviours and pit shapes with respect to various conditions of eletrochemical etching were in-vestigated. When HCl and NaCl solutions were used as electrolytes, the highest capacitanes were observed in solutions of 1MHCl and 5M NaCl. It was foundd that capacitance was improved by addition of H2SO4 to HCl so-lution which is considered to be due to the suppression of oxide film formation on the aluminum surface. The homogeneous distribution of each pits obtained in the HCl solution, while the degree of weight loss was lowest in the Nacl solution. The best etching properties in 1M HCl solution were obtained at the etching condi-tions of 0.15 A/$\textrm{cm}^2$, 150sec and$ 90^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.