• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.156-159
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• 2008

The electrical characteristic of SiGe-on-SOI (SGOI) wafer with different Ge concentration were evaluated by pseudo-MOSFET. Epitaxial SiGe layers was grown directly on top of SOI with Ge concentrations of 16.2, 29.7, 34.3 and 56.5 at.%. As Ge concentration increased, leakage current increased and threshold voltage shifted from 3 V to 7 V in nMOSFET, from -7 V to -6 V in pMOSFET. The interface states between buried oxide and top of Si was significantly increased by the rapid thermal annealing (RTA) process, and so the electrical characteristic of SGOI wafer degraded. On the other hand, additional post RTA　annealing (PRA) showed that it was effective in decreasing the interface states generated by RTA processes and the electrical characteristic of SGOI wafer enhanced higher than initial state.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.461-466
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• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Clinical and Experimental Pediatrics
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• v.57 no.5
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• pp.211-216
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• 2014

Asthma comprises a heterogeneous group of disorders characterized by airway inflammation, airway obstruction, and airway hyperresponsiveness (AHR). Airway inflammation, which induces AHR and recurrence of asthma, is the main pathophysiology of asthma. The fractional exhaled nitric oxide (FeNO) level is a noninvasive, reproducible measurement of eosinophilic airway inflammation that is easy to perform in young children. As airway inflammation precedes asthma attacks and airway obstruction, elevated FeNO levels may be useful as predictive markers for risk of recurrence of asthma. This review discusses FeNO measurements among early-childhood wheezing phenotypes that have been identified in large-scale longitudinal studies. These wheezing phenotypes are classified into three to six categories based on the onset and persistence of wheezing from birth to later childhood. Each phenotype has characteristic findings for atopic sensitization, lung function, AHR, or FeNO. For example, in one birth cohort study, children with asthma and persistent wheezing at 7 years had higher FeNO levels at 4 years compared to children without wheezing, which suggested that FeNO could be a predictive marker for later development of asthma. Preschool-aged children with recurrent wheezing and stringent asthma predictive indices also had higher FeNO levels in the first 4 years of life compared to children with wheezing and loose indices or children with no wheeze, suggesting that FeNO measurements may provide an additional parameter for predicting persistent wheezing in preschool children. Additional large-scale longitudinal studies are required to establish cutoff levels for FeNO as a risk factor for persistent asthma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Journal of Power System Engineering
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• v.19 no.2
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• pp.64-69
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• 2015

Marine diesel engines with high thermal efficiency and fuel diversity used for propulsive power have been taking charge of important position on marine transport. However, marine environment has recently focused on emissions such as nitrogen oxide and sulfur oxide which is generated from combustion of low grade fuels. EGR(Exhaust gas recirculation) system is one of effective methods to reduce the nitrogen oxide emission from marine diesel engines. In general, it is considered that recirculating gas influences fuel combustion and emissions in diesel engines. However, along with positive effects of EGR, the EGR system using fuels of including high sulfur concentration should be considered about re-combustion and activation of sulfur dioxide in recirculating gas. Therefore, in experimental study, an author investigates effects of sulfur dioxide mixture concentration in intake air on combustion and exhaust emission characteristics in a direct injection diesel engine. In results, change of sulfur dioxide concentrations in intake air had negligible impact on combustion chamber pressure, rate of heat release and emissions compared with effects of oxygen decreasing and carbon dioxide increasing of EGR.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.250-255
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• 2008

A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.

• Composites Research
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• v.29 no.4
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• pp.132-137
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• 2016

Based on mussel-inspired polydopamine (PDA), a novel technique to fabricate carbon nanowire (CNW) arrays is presented for a possible use of porous carbon electrode in electrochemical energy storage applications. PDA can give more porosity and nitrogen-doping effect to carbon electrodes, since it has high graphitic carbon yield characteristic and rich amine functionalities. Using such outstanding properties, the applicability of PDA for electrochemical energy storage devices was investigated. To achieve this, the decoration of the CNW arrays on carbon fiber surface was performed to increase the surface area for storage of electrical charge and the chemical active sites. Here, zinc oxide (ZnO) nanowire (NW) arrays were hydrothermally grown on the carbon fiber surface and then, PDA was coated on ZnO NWs. Finally, high temperature annealing was performed to carbonize PDA coating layers. For higher energy density, manganese oxide ($MnO_x$) nanoparticles (NPs), were deposited on the carbonized PDA NW arrays. The enlarged surface area induced by carbon nanowire arrays led to a 4.7-fold enhancement in areal capacitance compared to that of bare carbon fibers. The capacitance of nanowire-decorated electrodes reached up to $105.7mF/cm^2$, which is 59 times higher than that of pristine carbon fibers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.253-259
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• 2002

This paper deals with the effects of grounding conductors for metal oxide surge arresters. When surge arresters are improperly installed, the results can cause costly damage of electrical equipments. In particular, the route of surge arrester connection is very important because bends and links of leads increase the impedances to lightning surges and tend to nullify the effectiveness of a grounding conductor. Therefore, there is a need to know how effective installation of lightning surge arresters is made in order to control voltage and to absorb energy at high lightning currents. The effectiveness of a grounding conductor and 18 [㎸] metal oxide distribution line arresters was experimentally investigated under the lightning and oscillatory impulse voltages. Thus, the results are as follows; (1) The induced voltage of a grounding conductor is drastically not affected by length of a connecting line, but it is very sensitive to types of grounding conductor. (2) The coaxial cable having a low characteristic impedance is suitable as a grounding conductor. (3) It is also clear from these results that bonding the metal raceway enclosing the grounding conductor to the grounding electrode is very effective because of skin effect. (4) The induced voltages of grounding conductors for the oscillatory impulse voltages are approximately twice as large as those for the lightning impulse voltages.