• Journal of Powder Materials
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• v.8 no.1
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• pp.49-54
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• 2001

The synthesis and characteristics of W-Ni-Fe nanocomposite powder by hydrogen reduction of ball milled W-Ni-Fe oxide mixture were investigated. The ball milled oxide mixture was prepared by high energy attrition milling of W blue powder, NiO and $Fe_2O_3$ for 1 h. The structure of the oxide mixture was characteristic of nano porous agglomerate composite powder consisting of nanoscale particles and pores which act as effective removal path of water vapor during hydrogen reduction process. The reduction experiment showed that the reduction reaction starts from NiO, followed by $Fe_2O_3$ and finally W oxide. It was also found that during the reduction process rapid alloying of Ni-Fe yielded the formation of $\gamma$-Ni-Fe. After reduction at 80$0^{\circ}C$ for 1 h, the nano-composite powder of W-4.57Ni-2.34Fe comprising W and $\gamma$-Ni-Fe phases was produced, of which grain size was35nm for W and 87 nm for $\gamma$-Ni-Fe, respectively. Sinterability of the W heavy alloy nanopowder showing full density and sound microstructure under the condition of 147$0^{\circ}C$/20 min is thought to be suitable for raw material for powder injection molding of tungsten heavy alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.93-99
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• 2019

A pressure sensor is a device that converts an applied physical pressure into an electrical signal. Such sensors have a range of applications depending on the pressure level, from low to high pressure. Sensors that use physical pressure, when compared to those operating under air pressure, are not widely applied as they are inefficient. To solve this problem, graphene oxide, which exhibits good mechanical and electrical characteristics, was used to increase the efficiency of these pressure sensors. Graphene oxide has properties that control the movement of charges within the dielectric. Exploiting these properties, we evaluated the change in electrical characteristics when pressure was applied according to the ratio and thickness of the oxidation graph added to the pressure sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.94-95
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• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

• Microbiology and Biotechnology Letters
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• v.34 no.2
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• pp.129-135
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• 2006

A gene encoding for a putative microsomal epoxide hydrolase (mEH) of a zebrafish, Danio rerio, was cloned and characterized. The putative mEH protein of D. rerio exhibited sequence similarity with mammalian mEH and some other bacterial EHs. A structural model for the putative mEH was constructed using homology modeling based on the crystallographic templates, 1 qo7 and 1 ehy. The catalytic triad consisting of $Asp^{233}$, $Glu^{413}$, and $His^{440}$ was identified, and the characteristic features such as two tyrosine residues and oxyanion hole were found to be highly conserved. Based on bioinformatic analysis together with EH activity assay, the putative protein was annotated as mEH of D. rerio. Enantiopure styrene oxide with enantiopurity of 99%ee and yield of 33.5% was obtained from racemic styrene oxide by the enantioselective hydrolysis activity of recombinant mEH of D. rerio for 45 min.

• Polymer(Korea)
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• v.35 no.3
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• pp.265-271
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• 2011

Graphene oxide (GO) was prepared by the Hummers and Offeman method from graphite. Reduced graphene oxide (EGO) and functionalized graphenes were synthesized from GO by using hydrazine hydrate and amine-functionalized alkyl groups, respectively. The structures of the GO, EGO, and functionalized graphenes were identified by FTIR and $^{13}C$ NMR. In addition, we examined the thermal stability, morphology and dispersibility of the materials in various organic solvents. AFM disclosed that GO and RGO consisted of one- or two-layer graphene regions throughout the film. However, the functionalized graphene films showed average thicknesses of 2.26~3.30 nm, The thermal stability of the functionalized graphenes was poorer than that of the EGO. The functionalized graphenes were well dispersed in toluene or chloroform, as evidenced by the lack of the characteristic graphite reflection in the solutions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of Climate Change Research
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• v.7 no.4
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• pp.427-432
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• 2016

Nitrous oxide is one of the main sources of greenhouse gases and its concentration has increased from 273 ppb in 1,750 to 315 ppb in 2005. Specially, nitrogen fertilizer used in agricultural soils is considered as an important source of atmospheric $N_2O$ emission. This study was conducted to estimate the difference of nitrous oxide emission as chamber position on furrow and ridge and crop existence in gas sampling chamber on upland. Four treatments used in this experiment were (1) no-fertilizer without crop in chamber on ridge, (2) fertilizer application without crop in chamber on ridge, (3) fertilizer application with crop in chamber on ridge, (4) fertilizer application without crop in chamber on ridge and furrow. Nitrous oxide emission at fertilizer application with crop in chamber on ridge were the highest while were the lowest at no-fertilizer without crop in chamber on ridge. There was no significant difference of nitrous oxide emission by chamber position, but total emission by crop existence in chamber was significant difference. Therefore, in order to estimate greenhouse gases emission using chamber method in upland, it should be considered in correlation with crop existence in chamber and characteristic changes like as the soil moisture, microbial flora by crop growth stage.