• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.172-172
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.191-192
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• 2008

• 대한기계학회논문집B
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• 제30권12호
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• pp.1211-1217
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• 2006

This study is focused on oxidation prevention of STS430, which is generally used as solid oxide fuel cell(SOFC) interconnect at intermediate operating temperatures with oxidation-proof coatings. Inconel, $La_{0.6}Sr_{0.4}CoO_3(LSCo)$ and $La_{0.6}Sr_{0.4}CoO_3(LSCr)$ were chosen as coating materials. Using a radio frequency magnetron sputtering method, each target material was deposited as thin film on STS430 and was analyzed to find out favorable conditions. In this study, LSCr-coated STS430 can reduce electrical resistance to 1/3 level, compared with uncoated STS430. Also, long-term durability test at $700^{\circ}C$ for 1000 hours tells that LSCr thin layer performs an important role to prohibit serious degradations. Superior oxidation-resistant characteristic of LSCr-coated STS430 is attributed to the inhibition of spinel structure formation such as $MnCr_2O_4$.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Journal of Electrochemical Science and Technology
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• 제13권4호
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• pp.497-503
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• 2022

Spinel ferrites (Ni_xFe_3-xO₄; x = 0.25, 0.5, 0.75 and 1.0) have been prepared at 550℃ by egg white auto-combustion route using egg white at 550℃ and characterized by physicochemical (TGA, IR, XRD, and SEM) and electrochemical (CV and Tafel polarization) techniques. The presence of characteristic vibration peaks in FT-IR and reflection planes in XRD spectra confirmed the formation of spinel ferrites. The prepared oxides were transformed into oxide film on glassy carbon electrodes by coating oxide powder ink using the nafion solution and investigated their electrocatalytic performance for OER in an alkaline solution. The cyclic voltammograms of the oxide electrode did not show any redox peaks in oxygen overpotential regions. The iR-free Tafel polarization curves exhibited two Tafel slopes (b₁ = 59-90 mV decade^-1 and b₂ = 92-124 mV decade^-1) in lower and higher over potential regions, respectively. Ni-substitution in oxide matrix significantly improved the electrocatalytic activity for oxygen evolution reaction. Based on the current density for OER, the 0.75 mol Ni-substituted oxide electrode was found to be the most active electrode among the prepared oxides and showed the highest value of apparent current density (~9 mA cm^-2 at 0.85 V) and lowest Tafel slope (59 mV decade^-1). The OER on oxide electrodes occurred via the formation of chemisorbed intermediate on the active sites of the oxide electrode and follow the second-order mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• 센서학회지
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• 제17권1호
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• 한국정밀공학회지
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• 제30권12호
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• pp.1259-1264
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• 2013

This study has focused on the application of magnetic assisted polishing for ELID ground surface of aluminum oxide ceramics. Aluminum oxide ceramics has been widely used as advanced materials for electric, optic, mechanic, chemical usage and so on. In this study, ELID grinding and magnetic assisted polishing technology was adopted for high-effective manufacturing and high quality surface of ceramic parts. The characteristic of MAP machining have been evaluated by the value of surface roughness and surface profile before and after magnetic assisted polishing. As the results of experiments, the surface roughness after magnetic assisted polishing has shown a significant improvement and the surface roughness was more improved when the feed rate of tool became slow.

• 한국재료학회지
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• 제14권6호
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).