• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.104-104
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• 2009

In this study, both structural, dielectric and piezoelectric properties of the NKN-0.96BNT-0.04BT ceramics were investigated. All samples of the NKN-0.96BNT-0.04BT ceramics were fabricated by conventional mixed oxide method with Pt electrodes. We report the improved dielectric and piezoelectric properties in the perovskite structure composed of the NKN, BNT and the BT ceramics. We investigated the effects of NKN, BT on the structural and electrical properties of the NKN-0.93BNT-0.07BT ceramics. The dielectric properties and piezoelectric properties of the NKN-0.93BNT-0.07BT ceramics were superior to those of single composition NKN, NKN-BNT and those values for the NKN-0.93BNT-0.07BT ceramics were 861 and 1.12%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Nuclear Engineering and Technology
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• 제6권1호
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• pp.14-22
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• 1974

아노다이징 전압이 탄탈양극산화피막의 주파수 특성에 미치는 영향을 다음 임피단스 식을 이용하여 분석하였다. (equation omitted) 여기서 $R_{f}$, $C_{f}$는 각각 양극산화피막의 등가직렬저항, 등가직련용량, 유전 손실이다. 파라데타 P, $\tau$$_{ο}$, $\tau$$_{\omega}$, Co는 다음과 같이 정의된다. P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d 여기서 d는 양극산화피막의 두께, $\omega$는 화산층의 두께, $\rho$$_{ο}$는 금속과산화물의 계면에서의 산화물의 비저항, $\rho$$_{omega}$는 앙극산화피막의 진성영역에서의 비저항, A는 양극산화 피막의 면적이며, $textsc{k}$=0.0885$\times$$10^{-12}$ $\times$유전상수(in farad/cm). 등가직렬용량의 주파수에 따른 변화와 유전손실은 아노다이징전압이 증가함에 따라 감소하였다. 이 현상은 산화피막의 화산충의 두께가 아노다이징전압이 증가함에 따라 약간 증하는반면 선화피막 전체두께는 아노다이징전압에 비례하여 증가한다는 사실 때문이다. 실험측정치가 tan$\delta$$_{f}$=0.682$\Delta$ $C_{f}$ 관계식으로부터 부로 이탈하는것을 위의 임피단스식에 바탕을 두고 검토하였다. 여기서 $\Delta$ $C_{f}$는 0.1과 1KHZ 사이에서의 용량변화이다.이다.다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.747-749
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• 1992

In this study, $0.45Pb(Fe_{1/2}Nb_{1/2})O_3-(0.55-x)Pb(Fe_{2/3}W_{1/3})O_3-xPb(Mg_{1/3}Nb_{2/3})O_3(x=0.20, 0.25, 0.30)$ (x=0.20, 0.25, 0.30) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 950-990[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with the composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. To improve the dielectric loss, specimens doped with $MnO_2$, (0$\sim$2.0 [mol%] ) were fabricated and their dielectric properties were studied. With increasing the amount of $MnO_2$, dielectric constant was decreased and transition temperature was increased. Dielectric constant and dielectric loss of the 0.45PFN-0.30PFW-0.25PMN+$MnO_2$(1.0[mol.%]specimen(970[$^{\circ}C$]) had a good properties of 11,227, 1.3[%].

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.181-182
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• 2000

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.35-43
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• 1999

Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.