• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1197-1201
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• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.359-364
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• 2013

Purpose: This study was to observe characteristic of metal oxidation and bonding strength according to composition of Ni-Cr alloy for porcelain fused to metal crown. The three kinds of Ni-Cr alloy with different composition ratio of parent metal were observed general properties and chemical properties of each alloy surface and measured the shear bonding strength between ceramic and each alloys. The aim of study was to suggest the material for design of parent metal's composition ratio to development of alloy for porcelain fused to metal crown. Methods: The three kinds of alloy as test specimen was Ni(59wt%)-Cr(24wt%), Ni(67wt.%)-Cr(16wt.%) alloy and Ni(71wt%)-Cr(12wt%)alloy. The oxide on surface was observed by EDX. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{59}Cr_{24}$ alloy measured 23.03wt%, $Ni_{67}Cr_{16}$ alloy measured 21.13wt% and $Ni_{71}Cr_{12}$ alloy was measured 48.55wt%. And the maximum shear bonding strength was measured 58.02Mpa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H2 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H2 specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Journal of Technologic Dentistry
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• v.35 no.2
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• pp.113-120
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• 2013

Purpose: This study was to observe surface property and bonding strength according to composition of Ni-Cr alloy for porcelain fused to metal crown. The two kinds of Ni-Cr alloy with different composition ratio of parent metal were observed general properties and chemical properties of each alloy surface and measured the shear bonding strength between ceramic and each alloys. The aim of study was to suggest the material for design of parent metal's composition ratio to development of alloy for porcelain fused to metal crown. Methods: The two kinds of alloy as test specimen was Ni(71wt.%)-Cr(12wt.%) and Ni(63wt.%)-Cr(23wt.%) alloy. The oxide on surface was observed by SEM and EDX. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{71}Cr_{12}$ alloy measured 12.74wt.%, but $Ni_{63}Cr_{23}$ alloy was measured 15.91wt.%. And the maximum shear bonding strength was measured 106.14MPa between $Ni_{71}Cr_{12}$ alloy and vintage halo (VV group). Conclusion: The surface property and oxide characteristic of $Ni_{71}Cr_{12}$ alloy was similar to $Ni_{63}Cr_{23}$ alloy. And VV group has the strongest shear bonding strength.

• Carbon letters
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• v.15 no.4
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• pp.282-289
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• 2014

Blends of poly(vinyl alcohol) (PVA), polyethyleneimine (PEI), and graphene oxide (GO) were prepared by solution casting method. Calorimetric thermal properties of the blends were investigated. The $T_gs$ of PVA/PEI blends were higher than the $T_gs$ of either of the component polymers at low concentrations of PEI. These abnormal increases of $T_gs$ may be due to the negative entropy of mixing which is associated with strong hydrogen bonding between PVA and PEI. The degree of depression of $T^0_ms$ was not reduced by the negative entropy of mixing, since strong hydrogen bonding also causes an increase in the magnitude of negative ${\chi}$ between PVA and PEI. The $T_g$ of PVA was increased significantly by adding 0.7 wt.% GO into PVA. The magnitude of negative ${\chi}$ was increased by adding GO into the blends of PVA and PEI.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• Journal of Welding and Joining
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• v.20 no.6
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• pp.106-106
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.