• Title/Summary/Keyword: Oxide Bonding

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Research on Physicochemical Properties of Graphene Oxide (GO) and Reduced Graphene Oxide (R-GO) (그래핀 옥사이드(Graphen Oxide, GO)와 환원 그래핀의 (Reduced graphe oxide, R-GO)의 물리화학적 특성 연구)

  • Moo-Sun Kim;Ho-Yong Lee;Sung-Woong Choi
    • Composites Research
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    • v.36 no.3
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    • pp.167-172
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    • 2023
  • The manufacturing technology of composite material is applicable with filler characteristics maintaining low cost, flexibility, and easy process to develope the various functional composite materials. To realize functional composites, various researches on the high performance of composite materials using graphene as a filler is being actively conducted. In this study, physical and chemical properties were investigated using graphene to improve high functional properties. Graphene oxide (GO) was prepared using graphane nanoplatelet (GNP), and reduced graphene oxide (R-GO) was formed by reducing GO. The physical properties of GO and R-GO were analyzed, and the reliability of the manufactured method was reviewed by comparing that of GNP results. As a result of analysis by Raman spectroscopy, in the case of R-GO, it was confirmed that the intensity of D-peak and G-peak decreased compared to GO, and an increase of 0.08 was observed through the ratio of ID/IG. For the FTIR results, GO and RGO has a repeating C-C and C=C connection structure unlike GNP. GO and R-GO show clear peaks for C-O bond, C=C bond, C=O bond, and O-H bonding. As a result of X-ray diffraction analysis, GNP showed a wide diffraction peak at 25.86° of (002) plane characteristics, whereas GO and R-GO showed peaks corresponding to (001) and (100) planes. It was also found that the interlayer distance of GO increased by about 2.6 times compared to GNP.

Study on Reactive Non-thermal Plasma Process combined with Metal Oxide Catalyst for Removal of Dilute Trichloroethylene

  • Han Sang-Bo;Oda Tetsuji;Park Jae-Youn;Park Sang-Hyun;Koh Hee-Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.3
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    • pp.292-300
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    • 2006
  • In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about $99\;\%$ at the specific energy of 40 J/L with passing through manganese dioxide. C=C ${\pi}$ bond cleavage of TCE substances gave DCAC, which has the single bond of C-C through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about $3{\sim}4\;eV$ compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into COx is required to about 400 J/L, but $CO_2$ selectivity remains about $60\;\%$.

Study on the Bonding Interface in Directly Bonded Si-Si and Si-$SiO_2$ Si Wafer Pairs (직접 접합된 Si-Si, Si-$SiO_2$/Si기판쌍의 접합 계면에 관한 연구)

  • Ju, Byeong-Gwon;Bang, Jun-Ho;Lee, Yun-Hui;Cha, Gyun-Hyeon;O, Myeong-Hwan
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.127-135
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    • 1994
  • We investigated the bonding interfaces of directly-bonded Si-Si and $Si-Sio_{2}$/Si wafer pairs. By the angle lapping-delineation, anisotropic etching, and (FIR)-TEM observation methods, we studied on the interface defects and the transient region originated from the interface stress, the various types of voids, the formation and stability of interfacial oxide. We also compared the interface image of the bonded $Si-Sio_{2}$ with that of a typically grown $Si-Sio_{2}$.

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Technique of Direct Copper to Glass Seal in an Evacuated Tube Solar Collector (진공관형 태양열 집열기의 구리-유리 직접 접합 기술)

  • Kim, Cheol-Young;Lim, Hyong-Bong;Cho, Nam-Kwon;Kwak, Hee-Youl
    • Journal of the Korean Ceramic Society
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    • v.43 no.9 s.292
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    • pp.544-551
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    • 2006
  • The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

A Study on the Silicon Etching Characteristics in ECR using ${SF_6}/{Cl_2}$ Gas Mixtures (${SF_6}/{Cl_2}$ 혼합비에 따른 실리콘 식각 특성 고찰)

  • 이상균;강승열;권광호;이진호;조경익;이형종
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.114-119
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    • 2000
  • Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

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Influence of Blast Furnace Slag Addition on the Strength of Cold Bonded Pellet (고로 급냉슬래그를 첨가한 비소성 펠릿의 강도거동)

  • 피용진;반봉찬;김태동
    • Resources Recycling
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    • v.8 no.1
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    • pp.29-36
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    • 1999
  • Utilization of iron bearing dusts has been needed agglomeration prior to use as a burden in blast furnace The cold bonded pellet process using iron bearing dusts has been developed as an alternative to the conventional heat indurated pelletizing process. Partial substitution of cements with cheaper materials would decrease the production cost of pellet. This paper discusses the strength of pellet containing blast furnace slag as a bonding material in pelletizing a cold bonded agglomerates. Depending upon the quality, half of the cement required may be replaced by slag in the pellets with a strength of around 150 kgf. Some of the physicochemical properties of the bonding materials are also investigated in the present work.

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Influence of Electron Beam Irradiation on the Electrical Properties of ZnO Thin Film Transistor (전자빔 조사가 ZnO 박막의 전기적 특성 변화에 미치는 영향)

  • Choi, Jun Hyuk;Cho, In Hwan;Kim, Chan-Joong;Jun, Byung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.1
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    • pp.54-58
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    • 2017
  • The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

Orthodontic bracket bonding to glazed full-contour zirconia

  • Kwak, Ji-Young;Jung, Hyo-Kyung;Choi, Il-Kyung;Kwon, Tae-Yub
    • Restorative Dentistry and Endodontics
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    • v.41 no.2
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    • pp.106-113
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    • 2016
  • Objectives: This study evaluated the effects of different surface conditioning methods on the bond strength of orthodontic brackets to glazed full-zirconia surfaces. Materials and Methods: Glazed zirconia (except for the control, Zirkonzahn Prettau) disc surfaces were pre-treated: PO (control), polishing; BR, bur roughening; PP, cleaning with a prophy cup and pumice; HF, hydrofluoric acid etching; AA, air abrasion with aluminum oxide; CJ, CoJet-Sand. The surfaces were examined using profilometry, scanning electron microscopy, and electron dispersive spectroscopy. A zirconia primer (Z-Prime Plus, Z) or a silane primer (Monobond-S, S) was then applied to the surfaces, yielding 7 groups (PO-Z, BR-Z, PP-S, HF-S, AA-S, AA-Z, and CJ-S). Metal bracket-bonded specimens were stored in water for 24 hr at $37^{\circ}C$, and thermocycled for 1,000 cycles. Their bond strengths were measured using the wire loop method (n = 10). Results: Except for BR, the surface pre-treatments failed to expose the zirconia substructure. A significant difference in bond strengths was found between AA-Z ($4.60{\pm}1.08MPa$) and all other groups ($13.38{\pm}2.57-15.78{\pm}2.39MPa$, p < 0.05). For AA-Z, most of the adhesive remained on the bracket. Conclusions: For bracket bonding to glazed zirconia, a simple application of silane to the cleaned surface is recommended. A zirconia primer should be used only when the zirconia substructure is definitely exposed.

Experimental Study on Performance of MgO-based Patching Materials for Rapid Repair of Concrete Pavement (콘크리트 포장의 급속 보수를 위한 산화마그네슘계열 단면복구재의 성능에 대한 실험적 연구)

  • Lee, Hyeongi;Ann, Kiyong;Sim, Jongsung
    • International Journal of Highway Engineering
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    • v.18 no.1
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    • pp.43-55
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    • 2016
  • PURPOSES : This study aims to develop a repair material that can enhance pavement performance, inducing rapid traffic opening through early strength development and fast setting time by utilizing MgO-based patching materials for repairing road pavements. METHODS : To consider the applicability of MgO-based patching materials for repairing domestic road pavements, first, strength development and setting time of the materials were evaluated, based on MgO to $KH_2PO_4$ ratio, water to binder ratio, and addition ratio of retarder (Borax), by which the optimal mixture ratio of the developed material was obtained. To validate the performance of the developed material as a repair material, the strength(compressive strength and bonding strength) and durability (freezing, thawing, and chloride ion penetration resistance) was checked through testing, and its applicability was evaluated. RESULTS : The results showed that when an MgO-based patching material was used, the condensation time was reduced by 80%, and the compressive strength was enhanced by approximately 300%, as compared to existing cement-based repair materials. In addition, it was observed that the strength (compressive strength and bonding strength) and durability (freezing and thawing, and chloride ion penetration resistance) showed an excellent performance that satisfied the regulations. CONCLUSIONS : The results imply that an emergent repair/restoration could be covered by a rapid-hardening cement to meet the traffic limitation (i.e. the traffic restriction is only several hours for repair treatment). Furthermore, MgO-based patching materials can improve bonding strength and durability compared to existing repair materials.

Structural Characteristics of Ar-N2 Plasma Treatment on Cu Surface (Ar-N2 플라즈마가 Cu 표면에 미치는 구조적 특성 분석)

  • Park, Hae-Sung;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.75-81
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    • 2018
  • The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.