• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.122-122
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• 2003

In recent years, there has been increasing interest in quasi one-dimensional nanostructural systems, because of their numerous potential applications in various areas, such as materials sciences, electronics, optics, magnetism and energy storage. Specifically, zinc oxide (ZnO) is recognized as one of the most promising oxide semiconductor materials, because of its good optical, electrical, and piezoelectrical properties. The ZnO nanorods were synthesized using vapor-solid (VS) mechanism on soda lime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of a Zn powder at 500. As-fabricated ZnO nanorods had an average diameter and length of 40nm and 3$\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The Photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380nm and a green emission at around 500nm.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.422-425
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• 1999

Ultrafine NiO/YSZ (Yttria-Stabilized Zirconic) composite powders were prepared by using a glycine nitrate process (GNP) for anode material of solid oxide fuel cells. The specific surface areas of synthesized NiO/YSZ composite powders were examined with controlling pH of a precursor solution and the content of glycine. The binding of glycine with metal ions occurring in the precursor solution was analyzed by using FTIR. The characteristics of synthesized composite powders were examined with X-ray diffractometer, a BET method with $N_2$ absorption, scanning and transmission electron microscopies. Strongly acid precursor solution increased the specific surface area of the synthesized composite powders. This is suggested to be caused by the increased binding of metal ions and glycine under a strong acid solution of pH=0.5 that lets glycine consist of mainly the amine group of NH$_3$$^{+}$ After sintering and reducing treatment of NiO/YSZ composite powders synthesized by GNP, the Ni/YSZ pellet showed ideal microstructure very fine Ni Particles of 3-5${\mu}{\textrm}{m}$ were distributed uniformly and fine pores around Ni metal particles were formed, thus, leading to an increase of the triple phase boundary among gas, Ni and YSZ.Z.

• Journal of Powder Materials
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• v.24 no.4
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• pp.292-297
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• 2017

A metallic oxide layer of a heat-resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation and has a positive effect on the increase in electrical resistivity. In this study, green compacts of Fecralloy powder mixed with amorphous and crystalline silica are oxidized at $950^{\circ}C$ for up to 210 h in order to evaluate the effect of metal oxide on the oxidation and electrical resistivity. The weight change ratio increases as per a parabolic law, and the increase is larger than that observed for Fecralloy owing to the formation of Fe-Si, Fe-Cr composite oxide, and $Al_2O_3$ upon the addition of Si oxide. Si oxides promote the formation of $Al_2O_3$ and Cr oxide at the grain boundary, and obstruct neck formation and the growth of Fecralloy particles to ensure stable electrical resistivity.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.169-173
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• 2003

Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium or ammonium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and $142F/g-RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2mV/sec $g-RuO_2$ in potential range of $2.0\~4.2V(Li|Li^+))$.

• Transactions of the Korean hydrogen and new energy society
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• v.3 no.2
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• pp.25-33
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• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

• Journal of the Korean Chemical Society
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• v.37 no.7
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• pp.635-641
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• 1993

Electrochemical cell, $Pt|air(PO_2=5.3{\times}10^{-3}atm)|Zr_{0.85}Ca_{0.15}O_{1.85}|air(PO_2= 0.21atm)|Pt$, has been designed to characterize the solid electrolyte and the temperature dependence of the electromotive force (EMF) has been measured in a temperature range of 600∼1000${\circ}$C. Solid electrolyte shows pure ionic conduction of the oxygen anion. The Fe-FexO, Co-CoO, Ni-NiO, and Cu2O-CuO electrodes have been prepared by mixing the 1 : 1 mole ratio of each metal and metal oxide and then by heating at 800${\circ}$C for 6 hours. Electrochemical cells, Pt│M(s), $MO(s)|Zr_{0.85}Ca_{0.15}O_{1.85}|air(PO_2=0.21atm)|Pt$, have been designed and the temperature dependence of the EMF has also been measured in the same temperature range. The changes of the thermodynamic state functions for the formation of the metal oxides are calculated from the electromotive forces and their temperature dependences. The material properties of the oxide systems are also discussed with the function changes.

• The Bulletin of The Korean Astronomical Society
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• v.30 no.1
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• pp.27.2-27.2
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.