• 한국표면공학회지
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• 제36권4호
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• pp.329-333
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• 2003

The high-temperature oxidation behavior of Ti39Al-10V alloy that consisted primarily of $\beta$-Ti, ${\gamma}$-TiAl, and $\alpha_2$ $-Ti_3$Al phases was studied. The relatively thick and porous oxide scales formed consisted primarily of an outermost, thin TiO$_2$ layer, and an outer, thin $Al_2$$O_3$-rich layer, and an inner, very thick (TiO$_2$, $Al_2$$O_3$) mixed layer. Vanadium was present uniformly throughout the oxide scale. The formation and subsequent evaporation of V-oxides such as VO, $VO_2$, and $V_2$O$_{5}$ deteriorated oxidation resistance and scale adherence of the TiAl alloy significantly.y.

• 한국표면공학회지
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• 제33권4호
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• pp.281-288
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• 2000

To understand the effect of Fe on the oxidation behavior of TiAl alloys, TiAl-(2, 4, 6at% )Fe were oxidized at 800 and 90$0^{\circ}C$ in air. The oxidation resistance of TiAl-Fe alloys increased with increasing an iron content. The scales formed consisted of an outer $TiO_2$ layer, an intermediate $A1_2$$O_3$ layer, and an inner mixed ($TiO_2$+$A1_2$$O_3$) layer, being similar to other common TiAl alloys. But, the scales formed on TiAl-Fe alloys were generally thin compared to those formed on pure TiAl, and contained dissolved iron. Below the oxide scale, an oxygen affected zone was formed. This beneficial effects of Fe on increasing the oxidation resistance and scale adherence of TiAl alloys were attributed to the refinement of oxide grains, increased scale adherence and the enhanced alumina-forming tendency.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 전자공학회논문지A
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• 제31A권10호
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• pp.108-113
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• 1994

The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.111-111
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• 2000

In order to form a uniform oxidation layer and spinel crystalline phase that has been help strong bonding in Kovar(Fe-29Ni-17Co)-to-glass sealing, the humidified nitrogen and nirtogen/hydrogen mixture was used as an oxidation atmosphere. Kovar oxidation was diffusion-controlled reaction and the activation energy was 25~32 kcal/mol at $600~900^{\circ}C.$ After oxidation at $600^{\circ}C, $ the oxidation layer was under 1 $\mu\textrm{m}$ thickness and crystalline phase was spinel which was found to be suitable for the Kovar-to-glass sealing. The Kovar-to-glass seal was carried out at $1010^{\circ}C$ and humidified nitrogen/hydrogen mixture atmosphere. Sealing properties were tested by Leak tester and SEM.

• 대한전자공학회논문지
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• 제27권10호
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• pp.106-112
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• 1990

다공질 실리콘을 열산화할 때 산화의 온도 의존성과 IR흡수 스펙트럼을 조사하여 다공질 실리콘외 산화특성을 조사하였다. PSL(porous silicon layer)을 $700^{\circ}C$에서 1시간, $1100^{\circ}C$에서 1시간으로 2단계 습식산화시켜 bulk 실리콘의 열산화막과 같은 성질의 수십 ${\mu}m$두께의 OPSL(oxidized porous silicon layer)을 짧은 시간에 형성시킬 수 있으며, 식각율과 항복전계는 산화온도와 산화 분위기에 크게 의존하는 것으로 나타났다. 이때 PSL의 산화율은 약 390nm/s이고, 항복전계는 1.0MV/cm~2.0MV/cm의 분포를 갖는다. 웨이퍼 휨을 측정하여 고온 열산화시 발생하는 산화막의 stress를 조사하였다. $1000^{\circ}C$ 이상의 고온에서 건식산화할 경우 발생하는 stress는 ${10^2}dyne/{cm^2}~{10^10}dyne/{cm^2}$로 측정되었다.

• 한국세라믹학회지
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• 제37권9호
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• pp.887-893
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• 2000

중온형 고체산화물 연료전지용 금속접속자로서의 적용가능성을 알아보기 위하여 내산화막을 코팅한 Ferritic 스틸의 산화특성을 연구하였다. Ferritic 스틸은 고온산화로 형성된 산화크롬, 산화철막에 의해 시간에 따라 저항이 크게 증가함을 보였다. 반면, LMO 코팅한 Ferritic 스틸은 Ducrolloy와 같이 고온저항이 주기적인 증감을 보이면서 증가하지만 내산화막의 형성에 의해 80시간 이후에는 저항증가가 없어 정기 산화안정성을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.147-148
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• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• 한국분말재료학회지
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• 제19권3호
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• pp.196-203
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• 2012

$TiO_2$ was successfully formed on a Ti specimen by MAO (Micro-Arc-Oxidation) method treated in $Na_3PO_4$ electrolyte. This study deals with the influence of voltage and working time on the change of surface microstructure and phase composition. Voltage affected the forming rate of the oxidized layer and surface microstructure where, a low voltage led to a high surface roughness, more holes and a thin oxidized layer. On the other hand, a high voltage led to more dense surface structure, wider surface holes, a thick layer and fewer holes. Higher voltage increases photocatalytic activity because of better crystallization of the oxidized layer and good phase composition with anatase and rutile $TiO_2$, which is able to effectively separate excited electrons and holes at the surface.