• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2002년도 금형가공 심포지엄
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• pp.187-194
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• 2002

This paper describes the experimental results on direct selective laser sintering of WC-Co mixture for rapid tooling. The experiments were carried out within an air, argon and nitrogen atmosphere. Coupons of single layer were sintered at various laser powers, scanning speeds and scan spacings. As the energy density (energy per unit scanned area) is increased, the thickness of coupons is increased. The main problem took place during sintering within an air atmosphere was severe oxidation of WC-Co mixture. As the laser power is increased and/or scanning speed is decreased, more severe oxidation occurred. Within an argon and nitrogen atmosphere the oxidation is reduced significantly. Experiments on multi-layer sintering were also carried out.

• 한국자동차공학회논문집
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• 제11권2호
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• pp.134-139
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• 2003

This study was carried out to investigate the aging and conversion characteristics of oxidation catalysts for a natural gas vehicle with lean-bum system. The conversion of $CH_4$ was observed over the various composition ratio of PMs(Precious metals) and washcoating methods. On the fresh catalysts, Pd affected on the activity of $CH_4$ at low temperature more than other PMs in Pd-only and Rh/Pd/Pt catalysts. The activity at low temperature increased as a mount of Pd increases. On the aged catalysts, the $CH_4$ conversion efficiency of Pd-only catalyst with mono-layer washcoat decreased more than that of the other catalysts of $CH_4$ conversion. It was observed that the thermal durability of Rh/Pd/Pt catalysts with double-layer washcoat was better than the single washcoat catalyst.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.63-64
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• 2000

The low-temperature Si oxidation kinetics by inductively coupled oxygen plasma has been studied. Linear rate constants had negative values when the oxide growth rate was described by linear-parabolic growth law. The analysis of transverse-optical mode frequencies and etch rates indicated that the density of surface oxide was lower than that of bulk oxide. The oxidation kinetics could be explained qualitatively by assuming a surface layer with larger diffusion coefficient and a bulk layer with smaller diffusion coefficient.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.360-362
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• 1988

The new oxidation method was presented to grow the oxide layer by thermal reaction of $NH_{3}$ and $O_{2}$. The growth rate increased according as increase of partial pressure of $NH_{3}$. Optical transparent of the grown film was 12% compared with 17% of thermal oxidation when the wave number was $1,100cm^{-1}$. The oxide layer with good quaility was obtained.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• 한국재료학회지
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• 제14권4호
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• pp.281-286
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• 2004

The oxide scales formed on Ni-18W(at.%) coating that was electrodeposited on steel were investigated using XRD, SEM and TEM. The oxide scales consisted mainly of an outer NiO layer, and an inner thick ($NiWO_4$+NiO) mixed layer. The unoxidized coating below the oxide scale was rich in Ni and depleted in W, owing to the consumption of Wand the resultant Ni enrichment. The oxidation resistance of Ni-18W coating was poorer than that of the TiN coating, due to the formation of nonprotective NiWO$_4$. During oxidation, Ni and the substrate element of Fe diffused outward, while oxygen inward, according to the concentration gradients.

• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• 한국결정성장학회지
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• 제16권2호
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• pp.66-70
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• 2006

실리콘웨이퍼 표면에 기계적인 손상을 가한 후 산화 열처리 공정을 실시하면 온도와 기계적인 손상의 크기에 따라 여러 가지 결정 결함이 발생된다. 기계적인 손상이 크고 열처리 온도가 증가함에 따라 dislocation loop 등의 대형 결함들이 발생되고 열처리 온도가 낮거나 손상의 크기가 작을수록 OISF(Oxidation Induced Stacking Faults)등의 소형 결함들이 많이 발생된다. Minority carrier lifetime을 측정하여본 결과 결함의 크기가 작을수록 minority carrier lifetime이 높은 것으로 밝혀졌다. 더욱이 dislocation loop 등의 결정 결함보다는 결함 발생 이전 단계인 strained layer등이 금속불순물에 대한 gettering의 효과가 더욱 높음을 알 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.