• Title/Summary/Keyword: Oxidation Mechanism

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Spalling of the Oxide Scales Foemed on Stainless Steels During Cooling

  • Saeki, Isao;Ogama, Tetsuro;Furuichi, Ryusaburo;Kikkawa, Shinichi
    • Corrosion Science and Technology
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    • v.2 no.5
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    • pp.225-232
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    • 2003
  • High temperature oxidation of SUS430 and SUS304 stainless steels in 16.7 kPa $O_2$ - 20.3 kPa $H_2O$ - balanced N2 atmosphere at 1273 K was studied focused on the scale spalling during cooling after an isothermal oxidation. Spalling of the oxide scale during cooling occurred only for SUS304 stainless steel. The oxide scale was composed of two layers and they detached at the interface between them. The reason for the spalling could not be explained only by thermal stresses applied to the specimen during heating and cooling. A new mechanism for scale spalling was proposed based on combination of thermal stresses and thermal shock caused by a fast Martensite transformation of substrate metal.

Particle Impact Damage behaviors in silicon Carbide Under Gas Turbine Environments-Effect of Oxide Layer Due to Long-Term Oxidation- (세라믹 가스터빈 환경을 고려한 탄화규소의 입자충격 손상거동-장기간 산화에 따른 산화물층의 영향-)

  • 신형섭
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.4
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    • pp.1033-1040
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    • 1995
  • To simulate strength reliability and durability of ceramic parts under gas turbine application environments, particle impact damage behaviors in silicon carbide oxidized at 1673 K and 1523 K for 200 hours in atmosphere were investigated. The long-term oxidation produced a slight increase in the static fracture strength. Particle impact caused a spalling of oxide layer. The patterns of spalling and damage induced were dependent upon the property and impact velocity of the particle. Especially, the difference in spalling behaviors induced could be explained by introducing the formation mechanism of lateral crack and elastic-plastic deformation behavior at impact sit. At the low impact velocity regions, the oxidized SiC showed a little increase in the residual strength due to the cushion effect of oxide layer, as compared with the as-received SiC without oxide layer.

Manganese Removal in Water Treatment Processes (상수처리에서 망간 제거)

  • Kim, Jinkeun;Jeong, Sanggi;Kim, Jeongsook;Park, Sejin
    • Journal of Korean Society of Water and Wastewater
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    • v.19 no.5
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    • pp.595-604
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    • 2005
  • To determine the characteristics of manganese removal in Korea, 31 multi-regional water treatment plants (WTPs) were examined. The concentration of manganese in raw water was higher than the standards for drinking water at 2 WTPs. Manganese should be properly removed during water treatment processes to reduce the occurrence of black water in the distribution system because $Mn^{+2}$ can cause black deposits when it is oxidized. Manganese can effectively removed by oxidation, followed by sedimentation and filtration as well as absorption by greensand. Manganese absorption by greensand was the major mechanism for the removal of manganese, and it is effectively removed using this process. Regeneration of greensand using an oxidation agent was necessary for continuous and adequate removal of manganese.

Shock Tube and Modeling Study of the Formation and the Reduction of Nitrogen Oxides; Ammonia Oxidation (질소산화물의 생성과 제어반응에 관한 충격관 실험 및 모델 연구 ; 암모니아 연소)

  • Shin, Kuan-Soo;Cho, Hye-Yun;Shim, Seung-Bo;Jee, Sung-Bae
    • Journal of the Korean Society of Combustion
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    • v.4 no.1
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    • pp.59-65
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    • 1999
  • Ignition of $NH_3-O_2-Ar$ mixtures have been studied behind reflected shock waves over the temperature range of 1600-2300 K and the pressures in the range of 1.1-1.6 atm. The pressure profile and the radiation emitted behind the shock waves have been monitored to give empirical correlations between ignition delay times and the mixture concentrations with the experimental conditions. On the basis of this data, several kinetic mechanisms proposed for ammonia oxidation at high temperatures have been tested. The ignition delay times obtained from the mechanism proposed by Miller and Smook were in good agreement with our experimental results.

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Purification and Characterization of Bacillus subtilis Protoporphyrinogen Oxidase and Pre-equilibrium Behavior During Oxidation of Protoporphyrinogen IX

  • Jeong, Eun-Ju;Han, Ok-Soo
    • BMB Reports
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    • v.34 no.1
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    • pp.39-42
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    • 2001
  • Previous studies indicate that B. subtilis protoporphyrinogen oxidase is poorly inhibited by diphenyl ether herbicides. To better understand the basis of this insensitivity, the enzyme was overexpressed as a soluble protein in E. coli, purified and characterized. The mechanism of oxidation of B. subtilis protoporphyrinogen IX was studied and the enzyme kinetic parameters were determined for protoporpyrinogen IX; $K_m$, and $k_{cat}$ were $6.3\;{\mu}M$ and $0.028\;h-^1$, respectively. The enzyme required flavin adenine dinucleotide as a cofactor and its activity was enhanced by 1 mM n-octylglucopyranoside. The nonenzymatic oxidation rate was dependent on the concentration of protoporphyrinogen IX, suggesting that the reaction involves a pre-equilibrium step followed by a rate-limiting step.

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Analogue Substrate Cometabolism by Chemical Oxidation of Recalcitrant PAHs (난분해 PAHs의 화학적산화에 의한 유사기질동시대사)

  • 류선정;박갑성
    • Journal of Korea Soil Environment Society
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    • v.3 no.3
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    • pp.87-92
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    • 1998
  • The effect of chemically oxidized intermediates of Polynuclear Aromatic Hydrocarbon (PAH) compounds on the degradation of the parent PAHs was characterized and evaluated for the context of cooxidation. Anthracene and pyrene exhibited extensive degradation (mean percent removal of 57.5%) after 28 days of incubation by introducing the Fenton oxidation intermediate of the PAH compounds, while unoxidized anthracene and pyrene exhibited 12.5% removal The chemical oxidation products can serve as a structually similar analogue substrates for a consortia of soil microorganisms and as a metabolic intermediates in the biodegradation sequence of the parent PAH compounds. These results may be interpreted in the context of cooxidation mechanism whereby high recalcitrant PAH compounds are biodegraded in the soil and suggest a potential tool for bioremediation of PAHs contaminated soils and protection of groundwater.

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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Mechanical Properties & Ablation Mechanism of SiC Coated Carbon/Carbon Composite by Pack-cementation Method

  • Kim, J.I.;Oh, I.S.;Joo, H.J.
    • Carbon letters
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    • v.2 no.1
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    • pp.27-36
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    • 2001
  • The pack-cementation process is the method which is formed SiC coating layer to improve weak oxidation properties of CFRCs (carbon fiber-reinforced carbons). This method develops the anti-oxidation coating layer having no dimensional changes and good wetting properties. In this study to improve the oxidative resistance of the prepared 4D CFRCs, the surface of CFRCs is coated by SiC using pack cementation method. The mechanical properties of SiC-coated 4D CFRCs are measured by the 3-point bending test, and their ablation properties are investigated by the arc torch plasma test. From the results, it is found that both mechanical and ablation properties of SiC-coated 4D CFRCs are much better than bare CFRCs.

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Nucleation Process of Indium on a Copper Electrode

  • Chung, Yonghwa;Lee, Chi-Woo
    • Journal of Electrochemical Science and Technology
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    • v.4 no.3
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    • pp.93-101
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    • 2013
  • The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.

A Study on the Nucleation, Growth and Shrinkage of Oxidation Induced Stacking Faults (OSF) -Part2: Role of $SiO_2$ Layer on the Shrinkage of Oxidation Induced Stacking Faults (OSF) in P-type CZ Silicon (산화 적층 결합의 생성, 성장 및 소멸에 관한 연구-제2부 : P형 CZ 실리콘에서 산화 적층 결함의 소멸에 미치는 $SiO_2$층의 역학)

  • 김용태;민석기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.7
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    • pp.767-773
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    • 1988
  • We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.

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