• 대한기계학회논문집
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• 제18권1호
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• pp.193-202
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• 1994

A study of heat transfer and particle deposition has been made numerically for outside vapor deposition process. Heat conduction through the two layer cylinder which consists of the target and the deposited layer is included together with heat transfer and gas jet flow onto the cylinder from the torch. Temperature and flow fields have been obtained by an iterative method and thermophoretic particle deposition has been studied. Of particlar interests are effects of the thickness of the deposited layer, the torch speed and the rotation speed of the cylinder on particle deposition flux and efficiency. Effects of buoyancy, variable properties and tube rotation are included.

• 대한기계학회논문집
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• 제19권11호
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• pp.3063-3071
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• 1995

An experimental study has been carried out for the heat transfer and particle deposition during the Outside Vapor Deposition process. The surface temperatures of deposited layers, and the rates, efficiencies and porosities of particle deposition were measured. It is shown that the axial variation of the surface temperature can be assumed to be quasi-steady and that as the traversing speed of burner is increased, the deposition rate, efficiency and porosity increase due to the decreased surface temperature. As the flow rate of the chemicals is increased, both the thickness of deposition layers and the surface temperature increase. Deposition rate also increases, however, deposition efficiency decreases for tests done. Later passes in early deposition stage result in higher surface temperatures due to increased thickness of porous deposited layers, which cause the deposition rate, efficiency, and porosity to decrease.

• 대한기계학회논문집B
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• 제20권5호
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• pp.1671-1678
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• 1996

In external chemical vapor deposition processes including VAD and OVD the distribution of flame-synthesized silica particles is determined by heat and mass transfer limitations to particle formation. Combustion gas flow velocities are such that the particle diffusion time scale is longer than that of gas flow convection in the zone of particle formation. The consequence of these effects is that the particles formed tend to remain along straight smooth flow stream lines. Silica particles are formed due to oxidation and hydrolysis. In the hydrolysis, the particles are formed in diffuse bands and particle formation thus requires the diffusion of SiCl$\_$4/ toward CH$\_$4//O$\_$2/ combustion zone to react with H$\_$2/O diffusing away from these same zones on the torch face. The conversion kinetics of hydrolysis is fast compared to diffusion and the rate of conversion is thus diffusion-limited. In the language of combustion, the hydrolysis occurs as a Burke-Schumann process. In selected conditions, reaction zone shape and temperature distributions predicted by the Burke-Schumann analysis are introduced and compared with experimental data available. The calculated centerline temperatures inside the reaction zone agree well with the data, but the calculated values outside the reaction zone are a little higher than the data since the analysis does not consider diffusion in the axial direction and mixing of the combustion products with ambient air. The temperatures along the radial direction agree with the data near the centerline, but gradually diverge from the data as the distance is away from the centerline. This is caused by the convection in the radial direction, which is not considered in the analysis. Spatial distribution of silica particles are affected by convection and diffusion, resulting in a Gaussian form in the radial direction.

• 한국세라믹학회지
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• 제56권3호
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• Journal of Mechanical Science and Technology
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• 제18권9호
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.

• 한국정밀공학회지
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• 제19권8호
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• 공업화학
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• 제10권6호
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• pp.843-847
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• 1999

본 연구에서는 유동층-화학증기침투에 의해 이염화이메틸규소(DDS)와 수소로부터 생성된 탄화규소를 활성탄에 증착시킨 세라믹 탄소/탄화규소복합체가 제조되었다. 4~12, 12~20, 20~40 mesh의 활성탄이 사용되었다. 증착 후 반응물인 이염화이메틸규소의 농도, 활성탄의 크기, 반응압력, 반응시간에 따른 반응후 각 시료의 표면적과 증착량 및 증착양상을 관찰하였다. 실험결과 DDS의 농도가 낮고 반응압력이 작을수록 시료 기공내에 고른 증착을 갖는 것을 알 수 있었다. 또한 기공직경과 표면적들이 어떠한 시점에서 최소값을 갖는 것으로 기공내부 증착에서 입자외부 표면 증착으로 바뀜을 알 수 있었다. DDS의 농도가 낮고 반응압력이 낮을 때 작은 탄화규소입자가 활성탄 표면에 더욱 고르게 증착되었다. 이 결과들은 SEM, TGA, 기공도측정장치, BET에 의해 확인되었다.

• 한국전산유체공학회지
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• 제18권4호
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• pp.74-81
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• 2013

A numerical design analysis is conducted to search for an optimal shape of outlet in a rotating-disk CVD reactor. The goal is to suppress flow recirculation that has been found in a reactor having a sudden expansion of flow passage outside of the rotating disk. In order to streamline gas flow, the sidewall at which the flow in the Ekman layer is impinged, is tilted. The axisymmetric laminar flow and heat transfer in the reactor are simulated using the incompressible ideal gas model. For the conventional vertical sidewall, the flow recirculation forming in the corner region could be expanded into the interior to distort the upstream flow. The numerical results show that this unfavorable phenomenon inducing back flow could be dramatically suppressed by tilting the sidewall at a certain range of angle. The assessment of deviation in deposition rate based on the characteristic isotherm illustrates that the sidewall tilting may expand the domain of stable plug-like flow regime toward higher pressure. A physical interpretation is attempted to explain the mechanism to suppress flow recirculation.

• 멤브레인
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• 제21권1호
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• pp.72-83
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• 2011

고탁도 원수의 고도정수처리를 위해 관형 세라믹 정밀여과막 외부와 원통형 막 모듈 내부 사이의 공간에 광촉매를 충전한 혼성 모듈을 사용하였다. 광촉매는 PP (polypropylene) 구(bead)에 $TiO_2$ 분말을 플라즈마 화학증착(chemical vapor deposition) 공정으로 코팅한 것이다. 정수 원수 중 자연산 유기물(NOM)과 미세 무기 입자를 대체하기 위해, 휴믹산(humic acid)과 카올린(kaolin) 모사용액을 대상으로 하였다. 혼성공정에서 막오염을 최소화하기 위해 10분 주기로 10초 동안 물 역세척을 시행하였다. 휴믹산을 10 mg/L부터 2 mg/L로 변화시킴에 따라, 막오염에 의한 저항($R_f$)이 감소하고 J가 증가하여 2 mg/L에서 가장 높은 총여과부피($V_T$)를 얻었다. 탁도 및 $UV_{254}$ 흡광도의 처리효율은 각각 98.5% 및 85.7% 이상이었다. MF 공정 및 MF + $TiO_2$ 공정, MF + $TiO_2$ + UV 공정의 막여과 및 광촉매 흡착, 광산화의 처리 분율을 알아본 결과, 광촉매 흡착과 광산화에 의해 탁도는 거의 처리되지 않았으나, 광촉매 흡착 및 광산화에 의한 휴믹산 처리 분율은 각각 10.7, 8.6% 이상이었다.

• 한국재료학회지
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• 제28권1호
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• pp.6-11
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• 2018

There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.