• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.1
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• pp.193-202
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• 1994

A study of heat transfer and particle deposition has been made numerically for outside vapor deposition process. Heat conduction through the two layer cylinder which consists of the target and the deposited layer is included together with heat transfer and gas jet flow onto the cylinder from the torch. Temperature and flow fields have been obtained by an iterative method and thermophoretic particle deposition has been studied. Of particlar interests are effects of the thickness of the deposited layer, the torch speed and the rotation speed of the cylinder on particle deposition flux and efficiency. Effects of buoyancy, variable properties and tube rotation are included.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.11
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• pp.3063-3071
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• 1995

An experimental study has been carried out for the heat transfer and particle deposition during the Outside Vapor Deposition process. The surface temperatures of deposited layers, and the rates, efficiencies and porosities of particle deposition were measured. It is shown that the axial variation of the surface temperature can be assumed to be quasi-steady and that as the traversing speed of burner is increased, the deposition rate, efficiency and porosity increase due to the decreased surface temperature. As the flow rate of the chemicals is increased, both the thickness of deposition layers and the surface temperature increase. Deposition rate also increases, however, deposition efficiency decreases for tests done. Later passes in early deposition stage result in higher surface temperatures due to increased thickness of porous deposited layers, which cause the deposition rate, efficiency, and porosity to decrease.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.5
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• pp.1671-1678
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• 1996

In external chemical vapor deposition processes including VAD and OVD the distribution of flame-synthesized silica particles is determined by heat and mass transfer limitations to particle formation. Combustion gas flow velocities are such that the particle diffusion time scale is longer than that of gas flow convection in the zone of particle formation. The consequence of these effects is that the particles formed tend to remain along straight smooth flow stream lines. Silica particles are formed due to oxidation and hydrolysis. In the hydrolysis, the particles are formed in diffuse bands and particle formation thus requires the diffusion of SiCl$\_$4/ toward CH$\_$4//O$\_$2/ combustion zone to react with H$\_$2/O diffusing away from these same zones on the torch face. The conversion kinetics of hydrolysis is fast compared to diffusion and the rate of conversion is thus diffusion-limited. In the language of combustion, the hydrolysis occurs as a Burke-Schumann process. In selected conditions, reaction zone shape and temperature distributions predicted by the Burke-Schumann analysis are introduced and compared with experimental data available. The calculated centerline temperatures inside the reaction zone agree well with the data, but the calculated values outside the reaction zone are a little higher than the data since the analysis does not consider diffusion in the axial direction and mixing of the combustion products with ambient air. The temperatures along the radial direction agree with the data near the centerline, but gradually diverge from the data as the distance is away from the centerline. This is caused by the convection in the radial direction, which is not considered in the analysis. Spatial distribution of silica particles are affected by convection and diffusion, resulting in a Gaussian form in the radial direction.

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• Journal of Mechanical Science and Technology
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• v.18 no.9
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• pp.1680-1688
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• 2004

The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.

• Journal of computational fluids engineering
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• v.18 no.4
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• pp.74-81
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• 2013

A numerical design analysis is conducted to search for an optimal shape of outlet in a rotating-disk CVD reactor. The goal is to suppress flow recirculation that has been found in a reactor having a sudden expansion of flow passage outside of the rotating disk. In order to streamline gas flow, the sidewall at which the flow in the Ekman layer is impinged, is tilted. The axisymmetric laminar flow and heat transfer in the reactor are simulated using the incompressible ideal gas model. For the conventional vertical sidewall, the flow recirculation forming in the corner region could be expanded into the interior to distort the upstream flow. The numerical results show that this unfavorable phenomenon inducing back flow could be dramatically suppressed by tilting the sidewall at a certain range of angle. The assessment of deviation in deposition rate based on the characteristic isotherm illustrates that the sidewall tilting may expand the domain of stable plug-like flow regime toward higher pressure. A physical interpretation is attempted to explain the mechanism to suppress flow recirculation.

• Membrane Journal
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• v.21 no.1
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• pp.72-83
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• 2011

For advanced drinking water treatment of high turbidity water, we used the hybrid module that was composed of photocatalyst packing between outside of tubular ceramic microfiltration membrane and membrane module inside. Photocatalyst was PP (polypropylene) bead coated $TiO_2$ powder by CVD (chemical vapor deposition) process. Instead of natural organic matters (NOM) and fine inorganic particles in natural water source, modified solution was prepared with humic acid and kaolin. Water-back-flushing of 10 sec was performed per every period of 10 min to minimize membrane fouling. Resistance of membrane fouling ($R_f$) decreased and J increased as concentration of humic acid changed from 10 mg/L to 2 mg/L, and finally the highest total permeate volume ($V_T$) could be obtained at 2 mg/L. Then, treatment efficiencies of turbidity and $UV_{254}$ absorbance were above 98.5% and 85.7%, respectively. As results of treatment portions by membrane filtration, photocatalyst adsorption, and photo-oxidation in MF, MF + $TiO_2$, and MF + $TiO_2$ + UV processes, turbidity was treated little by photocatalyst adsorption, and photo-oxidation. However, treatment portions of humic acid by adsorption and photo-oxidation were above 10.7 and 8.6%, respectively.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.6-11
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• 2018

There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.