• Title/Summary/Keyword: Output resistance

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Method of Optimum Efficiency to Coefficient of Utilization for Single Phase Induction Motor (단상 유도전동기의 이용률 변동에 대한 최적효율 산정기법)

  • Kim, Yang-Ho;Kim, Young-Sun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.55 no.4
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    • pp.155-160
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    • 2006
  • In this paper, deduced suitable optimization to request output condition after taking closely characteristic data of single phase induction motor(SIM) which is the possibility becoming economic is coming to be demanded. Motor proper move connection data took advantage of result of existing data and iron loss and copper loss, mechanical loss took advantage of statistical data, and decide motor move laking advantage of saving data and secondary resistance and optimum purpose of method that is proposed through single phase induction motor and comparison performance evaluation having on the same output parameter. That decide material factor, electric power damage ratio, and coefficient of utilization for optimum function by method that search request output and optimum values of efficiency case by case and decided is proper that is saved after take magnetizing reactance relationship. This research result which it sees against a material expense with use coefficient of utilization which is included in loss expense decides the same plan variable back the place efficiency is useful and will be applied.

Low-Voltage Current-Sensing CMOS Interface Circuit for Piezo-Resistive Pressure Sensor

  • Thanachayanont, Apinunt;Sangtong, Suttisak
    • ETRI Journal
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    • v.29 no.1
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    • pp.70-78
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    • 2007
  • A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

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ANALYSIS OF THE MUTUAL SELF-BIASED SHIELDED MAGNETO-RESISTIVE HEAD WITH TRANSMISSION-LINE MODEL(II)

  • Zhang, H.W.;Kim, H.J.
    • Journal of the Korean Magnetics Society
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    • v.5 no.4
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    • pp.299-303
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    • 1995
  • In order to improve the read-out signal waveform, a shielded magnetoresistive (SMR) head has been designed and studied by applying the transmission-line model. The bias and signal field distribution, the voltage output, the harmonic output signal and resistance value of MR element are simulated as functions of bias current and recording displacement. The results show that the SMR head has good linear character with respect to the medium recording signal in high recording frequency of about 2.5 MHz. The amplitude and waveform of reroduction signal have been obviously improved. The saturation effect on the symmetry and amplitude of reproducing output have also been analyzed.

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A Class E Power Oscillator for 6.78-MHz Wireless Power Transfer System

  • Yang, Jong-Ryul
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.220-225
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    • 2018
  • A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

Steady-State Characteristics of Resonant Switched Capacitor Converters

  • Shoyama Masahito;Deriha Fumitoshi;Ninomiya Tamotsu
    • Journal of Power Electronics
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    • v.5 no.3
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    • pp.206-211
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    • 2005
  • Conventional switched capacitor converters have an inherent drawback that their efficiency decreases as the output current increases. This inherent drawback is due to a periodical forced charging and discharging operation in the internal switched capacitors accompanied by a large capacitor current. Their efficiency can not be increased by decreasing its internal resistance. As a result, conventional switched capacitor converters have been limited to uses with a very small output current. To solve this problem we presented a novel switched capacitor converter topology that uses a resonant operation instead of the forced charging and discharging operation. Its advantage over a conventional switched capacitor converter is higher efficiency even in a high output current region. In this paper, the operation analysis and steady-state characteristics are described in detail for a half buck type switched capacitor converter, and they are confirmed by experimentation.

A Cu-Ni Thin Film Pressure Sensor (Cu-Ni 박막 압력 센서)

  • 민남기;전재형;이성래;김정완
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.9-12
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    • 1997
  • The fabrication and performance of a thin film pressure sensor are described. Cu-Ni thin film strain gauges have been fabricated by RF magnetron sputtering. For all the gauges, the relative chance in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output characteristic is found to be linear over the entire Pressure range (0-30kgf/cm$^2$) and the output sensitivity is 1.6 mV/V. The maximum nonlinearity observed in output characteristics is 0.34%FS for 5V excitation and the hysteresis is less than 0.1%FS.

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A New Wire Bonding Technique for High Power Package Transistor (고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식)

  • Lim, Jong-Sik;Oh, Seong-Min;Park, Chun-Seon;Lee, Yong-Ho;Ahn, Dal
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.4
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    • pp.653-659
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    • 2008
  • This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

Extraction of Substrate Resistance Parameters for RF MOSFETs Based on Three-Port Measurement

  • Kang, In-Man;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.809-812
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    • 2005
  • In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

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Development of GaAs Gunn diodes and Characterization of Negative Differential Resistance for Millimeter-wave Oscillator (밀리미터파 발진용 GaAs Gunn 다이오드 소자의 개발과 음성미분저항)

  • Yoon, Jin Seob;Nam Gung, Il Joo
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.4 no.4
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    • pp.21-29
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    • 2008
  • The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

Characteristic Analysis of Single-phase Line-start Permanent Magnet Synchronous Motor Considering Iron Loss (철손을 고려한 단상 영구자석형 유도동기기의 특성해석)

  • Nam, Hyuk;Kang, Gyu-Hong;Hong, Jung-Pyo
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.53 no.5
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    • pp.295-304
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    • 2004
  • This paper deals with characteristic analysis method using d-q axis equivalent circuit considering iron loss in a single-phase line-start permanent magnet synchronous motor. The iron loss resistance to account for the iron loss is included in the equivalent circuit to improve the modeling accuracy. Furthermore, for the improved calculation of the iron loss, the iron loss is calculated from the magnetic flux density by 2-dimensional finite element method. The result is represented as the iron loss resistance and connected in parallel with the total induced voltage. Therefore, the currents can be expressed as the summation the output current with the current corresponding to the iron loss. Finally, the steady state characteristic analysis results are compared with the experimental results to verify this approach.