• 천문학회보
• /
• 제41권1호
• /
• pp.68.2-68.2
• /
• 2016

We present the variability and time lag measurements of PG 0934+013 based on the photometric and spectroscopic monitoring campaign over two years. We obtained 46 epochs of data from the spectroscopic campaign, which was carried out using the South African Large Telescope with 1 week cadence over two sets of 4 month-long observing period, while we obtained 80 epochs of B band data from the campaign. Due to the six month gap between two campaigns, we separately measured the time lag of the $H{\beta}$ emission line by comparing the emission line light curve with the B band continuum light curve using the cross-correlation function techniques. We determined the time lags and black hole mass.

• 천문학회보
• /
• 제46권1호
• /
• pp.54.4-55
• /
• 2021

The Seoul National University AGN Monitoring Project (SAMP) is a welldesigned long-term AGN reverberation mapping project. SAMP focuses on the luminous AGNs out to z~0.5 with relative long time lags between AGN continuum and broad emission lines and aims to probe the high-end of the AGN broad line region (BLR) size-luminosity (R-L) relation. The pilot observations started in October 2015 for 100 AGNs to confirm the variability and the H and [O III] emission line strengths. Based on the initial variability test, 48 quasars has been continued spectroscopic monitoring since Feb. 2016 with Lick 3m and MDM 2.4m telescopes with a cadence of ~20 days. Supporting photometric monitoring in B and V band was conducted at multiple facilities including the MDM 1.3m, LOAO, and DOAO telescopes with a cadence of ~10 days. By the time of Feb. 2021, we have obtained five years spectroscopic and photometric data. More than 30 AGNs shows significant variability in five-year baseline and 16 of them show well detected lags between B-band and H. Here, we report some examples of SAMP light curves and lag detections using the first five-year data as well as the location of our 16 targets in the AGN BLR R-L relation. These measurements are consistent with the existing R-L relation and located at the high-end. With the coming data, SAMP are hopefully to report more AGNs with well detected lags. Our results demonstrate the general feasibility and potential of long-term reverberation project with medium cadence for luminous AGNs.

• 한국전기전자재료학회논문지
• /
• 제29권12호
• /
• pp.841-846
• /
• 2016

ZnO nanorods were grown on $SiO_2$ coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ~10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at $90^{\circ}C$. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

• Advances in nano research
• /
• 제3권1호
• /
• pp.13-27
• /
• 2015

Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.

• 비파괴검사학회지
• /
• 제31권2호
• /
• pp.165-173
• /
• 2011

음향방출기법은 대형 구조물의 구조건전성감시(SHM)를 위한 매우 효율적인 방법이지만, 롤러코스터 지지구조물처럼 승용물의 운행으로 인한 매우 큰 잡음이 일상적으로 존재하는 경우에는 균열 진전 신호만을 분류하여 실시간 감시를 수행하기가 쉽지 않다. 이와 같은 문제의 해결을 위해 본 연구에서는 실시간으로 음원의 분류가 가능한 파형 파라미터 필터링 기법을 제안하였다. 파형 파라미터 필터링 기법은 음향방출 신호의 파형 파라미터를 이용하여 음향방출 히트를 사전에 필터링함으로써 실시간으로 감시하고자 하는 대상 음원만을 분류해내는데 매우 유리한 점이 있다. 다양한 음원에 대해 음향방출 파형 파라미터를 측정 및 분석하여 제안한 기법의 타당성을 살펴보았다. 또한 파형 파라미터 필터가 내장된 음향 방출 시스템을 구축하고 이를 실제 롤러코스터 지지구조물에 적용하여 실시간 균열진전 감시를 위한 가능성을 타진하였다.

• 한국재료학회지
• /
• 제8권6호
• /
• pp.526-531
• /
• 1998

HVPE(hydride vapor phase epitaxy)법으로 (111) $MgAl_2O_4$기판 위에 $10~240\mu{m}$두께의 GaN를 성장하고, GaN의 두께에 따 광학적 성질을 조사하였다. $MgAl_2O_4$기판 위에 성장된 GaN의 PL 특성은 결정성장온도에서 기판으로부터 Mg이 out-diffusion하여 auto-doping 됨으로써 불순물이 첨가된 GaN의 PL 특성을 나타내었다. 10K의 온도데서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 불순물과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 포논 복제에 의한 발광으로 구성되었으며, 깊은 준위로부터의 발광은 나타나지 않았다. 중성 도너에 속박된 여기자 발광 에너지와 라만 $E_2$모드 주파수는 GaN의 두께가 증가함에 따라 지수 함수적으로 감소하였으며, GaN 내의 잔류 응력에 대하여 라만 E2 모드 주파수는$\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa)의 관계로 변화하였다.

• 한국통신학회논문지
• /
• 제38B권10호
• /
• pp.851-860
• /
• 2013

전 세계적으로 디지털 TV 방송 서비스로의 전환에 대해 미래의 주파수 부족을 해결하기 위한 방안으로 우수한 전파 특성을 가진 TV 화이트 스페이스(White Space)에 대한 관심이 미국과 유럽을 중심으로 높아지고 있다. 본 논문에서는 이러한 실내 환경에서 TV 화이트 스페이스 대역을 이용하는 TVBD(TV Band Device)의 송신기가 DTV(Digital TV) 수신기에 미치는 간섭에 대한 실측 실험을 수행하였으며, 이와 병행하여 SEAMCAT툴을 이용한 몬테카를로 모의실험을 통해 통계적 간섭확률을 산출함으로써 실측 실험 결과와 비교분석을 수행하였다. 본 실측실험 및 모의실험 과정에서 주어진 DTV 수신환경과 각각의 송신 파라미터들은 FCC에서 규정한 TVBD 송신 규격에 준하여 설정하였다. 이를 기반으로 실내 환경에서 DTV 수신기와 TVBD 송신기 간의 거리에 따른 최적 공존을 위한 TVBD 송신 전력을 산출하였으며, 결론적으로 두 시스템이 상호 양립 가능한 기술기준을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.658-658
• /
• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.184-184
• /
• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Bulletin of the Korean Chemical Society
• /
• 제25권5호
• /
• pp.652-656
• /
• 2004

A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.