• Title/Summary/Keyword: Orthorhombic phase

Search Result 177, Processing Time 0.027 seconds

Nonstoichiometric Studies of the Mixed Valency $La_{1-x}Ca_xFeO_{3-y}$ (혼합원자가 $La_{1-x}Ca_xFeO_{3-y}$의 비화학양론에 관한 연구)

  • Chul Hyun Yo;Woong Bum Pyun;Eun Seok Lee;Sung Joo Lee
    • Journal of the Korean Chemical Society
    • /
    • v.32 no.1
    • /
    • pp.9-14
    • /
    • 1988
  • Perovskite type compounds of the $La_{1-x}Ca_xFeO_{3-y}$ system were prepared from stoichiometric mixtures of La_2O_3,\;CaCO_3$, and Fe(NO-3)_3{\cdot}9H_2O$ by heating at 1100$^{\circ}C$ for 24 hours. The crystallographic structures of the solid solutions of all compositions were orthorhombic systems. X-ray diffraction and Mohr salt analysis revealed that at higher y value the phase transition due to vacancy ordering occured and that the lattice volume decreased when the x value was increased. The value of nonstoichiometric ratio y were found to be in the range of $0.0{\sim}0.5$. Electrical conductivities of this systems are measured in temperature range of -100 to 100$^{\circ}C$. Ionic contribution to total conductivity was found from activation energy in the phase containing the open pathway due to vacancy ordering.

  • PDF

Microstructure and Microwave Dielectric Properties of (1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9) Ceramics ((1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9)세라믹스의 미세구조와 마이크로파 유전 특성)

  • 김재식;최의선;이문기;류기원;이영희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.8
    • /
    • pp.840-845
    • /
    • 2004
  • The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and -36.02∼+3.46 ppm/$^{\circ}C$, respectively.

Preparation of Gas Sensors with Nanostructured SnO2 Thick Films with Different Pd Doping Concetrations by an Ink Dropping Method

  • Yoon, Hee Soo;Kim, Jun Hyung;Kim, Hyun Jong;Lee, Ho Nyun;Lee, Hee Chul
    • Journal of the Korean Ceramic Society
    • /
    • v.54 no.3
    • /
    • pp.243-248
    • /
    • 2017
  • Pd-doped $SnO_2$ thick film with a pure tetragonal phase was prepared on patterned Pt electrodes by an ink dropping method. Nanostructured $SnO_2$ powder with a diameter of 10 nm was obtained by a modified hydrazine method. Then the ink solution was fabricated by mixing water, glycerol, bicine and the Pd-doped $SnO_2$ powder. When the Pd doping concentration was increased, the grain size of the Pd-doped $SnO_2$ thick film became smaller. However, an agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The orthorhombic phase disappeared even at a low Pd doping concentration and a PdO peak was obtained for a high Pd doping concentration. The crack-free Pd-doped $SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of the patterned Pt electrodes by the optimized ink dropping method. The prepared 3 wt% Pd-doped $SnO_2$ thick films showed monoxide gas responses ($R_{air}/R_{CO}$) of 4.0 and 35.6 for 100 and 5000 ppm, respectively.

Microwave Dielectric Properties of (${Pb_{0.2}}{Ca_{0.8}}$)[$({Ca_{1/3}}{Nb_{2/3}})_{1-x}{Ti_x}$]$O_3$ Ceramics (Microwave Dielectric Properties of (${Pb_{0.2}}{Ca_{0.8}}$)[$({Ca_{1/3}}{Nb_{2/3}})_{1-x}{Ti_x}$$O_3$ 세라믹스의 마이크로파 유전특성)

  • Kim, Eung-Soo;Kim, Yong-Hyun;Kim, Jun-Chul;Bang, Kyu-Seok
    • Korean Journal of Materials Research
    • /
    • v.11 no.8
    • /
    • pp.708-712
    • /
    • 2001
  • Microwave dielectric properties of $(Pb_{0.2}Ca_{0.8})[(Ca_{1/3}Nb{2/3})_{1-x}Ti_x]O_3$ ceramics were investigated as a function of $Ti^{4+}$ content (0.05$\leq$x$\leq$0.35). A single perovskite phase was obtained from x=0.05 to x=0.15, and $TiO_2$ and $CaNb_2O^6$ were detected as a secondary phase beyond x=0.2. The structure was changed from orthorhombic at x=0.05 to cubic at x=0.35. Dielectric constant(K) was increased with increase of $Ti^{4+}$ content due to increase of rattling effect, and was inversely proportional to the cube of the average radius of B-site cation, however, Qf value was decreased, which was due to the decrease of grain size and the secondary phase. With the increase of $Ti^{4+}$ content, the temperature coefficient of resonant frequency(TCF) was controlled from -27.36 ppm/$^{\circ}C$ value to +18.4 ppm/$^{\circ}C$ value, which was caused by the influence of tolerance factor(t) and the bond valence of B-site. Typically, K of 51.67, Qf of 7268(GHz), TCF of 0 ppm/$^{\circ}C$ were obtained in the $(Pb_{0.2}Ca_{0.8})[(Ca_{1/3}Nb_{2/3})_{0.8}Ti_0.2]O_3$ sintered at 13$50^{\circ}C$ for 3h.

  • PDF

The electrical properties study with specific of phase transition of Lead Monoxide by PIB(Particle In Binder) (PIB(Particle In Binder) 방법으로 제조된 산화납의 특이상전이에 따른 전기적 특성 평가)

  • Kim, Sung-Hyun;Kim, Young-Bin;Jung, Suk-Hee;Kim, Min-Woo;Oh, Kyung-Min;Park, Ji-Gun
    • Journal of the Korean Society of Radiology
    • /
    • v.2 no.3
    • /
    • pp.19-25
    • /
    • 2008
  • Commercial analog x-ray detectors based on film cassettes have been showing problems such as with image storage and image transmission. Recently direct conversion material, photoconductor whit flat panel have been researched which generate the electron hole-pair (EHP). In this paper, we researched the electrical properties of the PbO and Lead(II) oxide PbO. film which fabricated by Particle-In-Binder(PIB) method. We compared tetragonal ${\alpha}$-PbO with orthorhombic ${\beta}$-PbO physical property. Tetragonal material was more than orthorhombic material in other paper. The solution was Poly Vinyl Butyral(PVB) in the PIB. We discussed about the sample of x-ray sensitivity, leakage current, Signal to Noise Rate and investigated SEM for the physical property of sample. We need to think more research ${\alpha}$-PbO material fabrication.

  • PDF

Electrical Properties of YMnO3 Thin Film by Sol-gel Process (졸-겔 공정에 의한 YMnO3 박막의 전기적 특성)

  • Kim, Eung-Soo;Kim, Beng-Gu;Kim, Yoo-Taek
    • Journal of the Korean Ceramic Society
    • /
    • v.39 no.5
    • /
    • pp.511-516
    • /
    • 2002
  • Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.

Preparation of a Bi$_{4}$Ti$_{3}$O$_{12}$ Thin Film and Its Electrical Properties (Bi$_{4}$Ti$_{3}$O$_{12}$ 박막의 제작과 그 특성에 관한 연구)

  • Gang, Seong-Jun;Jang, Dong-Hun;Min, Gyeong-Jin;Kim, Seong-Jin;Jeong, Yang-Hui;Yun, Yeong-Seop
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.37 no.4
    • /
    • pp.7-14
    • /
    • 2000
  • A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

  • PDF

Optical Properties of Photoferroelectic Semiconductors IV.(Optical Properties of SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni and BiSeI:Ni Single Crystals) (Photoferroelectric 반도체의 광학적 특성 연구 IV. (SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni 및 BiSeI:Ni 단결정의 광학적 특성에 관한 연구))

  • Oh, Seok-Kyun;Hyun, Seung-Cheol;Yun, Sang-Hyun;Kim, Wha-Tek;Kim, Hyung-Gon;Choe, Sung-Hyu;Yoon, Chang-Sun;Kwun, Sook-Il
    • Journal of the Korean Vacuum Society
    • /
    • v.2 no.2
    • /
    • pp.236-245
    • /
    • 1993
  • Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

  • PDF

Studies on Crystallographic and Mossbauer Spectra of the LiFe0.9Mn0.1PO4 (LiFe0.9Mn0.1PO4 물질의 결정구조 및 뫼스바우어 분광 연구)

  • Kwon, Woo-Jun;Lee, In-Kyu;Rhee, Chan-Hyuk;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
    • /
    • v.22 no.1
    • /
    • pp.15-18
    • /
    • 2012
  • The olivine structured $LiFe_{0.9}Mn_{0.1}PO_4$ material was prepared by solid state method, and was analyzed by x-ray diffractometer (XRD), superconducting quantum interference devices (SQUID) and Mossbauer spectroscopy. The crystal structure of $LiFe_{0.9}Mn_{0.1}PO_4$ was determined to be orthorhombic (space group: Pnma) by Rietveld refinement method. The value of N$\acute{e}$el temperature ($T_N$) for $LiFe_{0.9}Mn_{0.1}PO_4$ was determined 50 K. The temperature dependence of the magnetization curves showed magnetic phase transition from paramagnetic to antiferromagnetic at $T_N$ by SQUID measurement. M$\ddot{o}$ssbauer spectra of $LiFe_{0.9}Mn_{0.1}PO_4$ showed 2 absorption lines at temperatures above $T_N$ and showed asymmetric 8 absorption lines at temperatures below $T_N$. These spectra occurred due to the magnetic dipole and electric quardrupole interaction caused by strong crystalline field at asymmetric $FeO_6$ octahedral sites.

Comparison of Abnormal Grain Growth Behavior of Lead-Free (Na,K)NbO3-M(Cu,Nb)O3, (M = Ca, Sr, Ba) Piezoelectric Ceramics (비납계 (Na,K)NbO3-M(Cu,Nb)O3, (M = Ca, Sr, Ba) 압전 세라믹의 비정상 결정 성장 거동 비교)

  • Jung, Seungwoon;Lim, Ji-Ho;Jung, Han-Bo;Ji, Sung-Yub;Choi, Seunggon;Jeong, Dae-Yong
    • Korean Journal of Materials Research
    • /
    • v.30 no.7
    • /
    • pp.343-349
    • /
    • 2020
  • NKN [(Na,K)NbO3] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O3]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO3-Ba(Cu,Nb)O3 and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO3-M(Cu,Nb)O3 (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).