• BMB Reports
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• v.31 no.4
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• pp.328-332
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• 1998

The 8-hydroxyisocoumarin, named Centipedin, which has a significant antibiotic activity, was separated and solubilized with organic solvents, such as diethyl ether from centipede Scolopendra subspinipes multilans L. Koch. The Centipedin was purified by silicic acid column and high S cation exchange chromatography followed by reverse-phase HPLC. It was confirmed that Centipedin has a potent antibiotic effectiveness against Gram-negative Klebsiella pneumoniae ATCC 8308. The results showed that Centipedin blocks both DNA replication and RNA transcription during the growth of this pathogen in vivo. The biosynthesis of antibiotic 8-hydroxyisocoumarin was studied in vivo by feeding $[^{14}C]-labelled$ compound as a precursor to live centipede, in which $[^{14}C]acetate$ was the most efficiently incorporated into the Centipedin within 30 h after injection. Also, in vitro study on the biosynthesis of Centipedin showed that efficient incorporation of $[^{14}C]acetate$ occurred at pH range 5.0-7.0 for 10 h incubation and decreased significantly after then. It is suggested that 8-hydroxyisocoumarin is one of the defense compounds acting on bacterial infection in Scolopendra subspinipes.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2000.05a
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• pp.108-111
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• 2000

FeS/FeS$_2$ minerals have been known to be potentially useful reductant to the removal of common organic contaminants in groundwater and soil. This research is aimed at improving our understanding of factors affecting the pathways and rates of reductive transformation of Hexachloroethane by catalytical iron minerals in natural system. Hexachloroethane is reduced by FeS/FeS$_2$ minerals under anaerobic condition to tetrachloroethylene and trichloroethylene with pentachloroethyl radical as the intermediate products. The kinetics of reductive transformations of the Hexachloroethane have been investigated in aqueous solution containing FeS, FeS$_2$. The proposed reduction mechanism for the adsorbed nitrobenzene involves the electron donor-acceptor complex as a precursor to electron transfer. The adsorbed Hexachloroethane undergo a series of electron transfer, proton transfer and dehydration to achieve complete reduction. It can be concluded that the reductive transformation reaction takes place at surface of iron-bearing minerals and is dependent on surface area and pH. Nitrobenzene reduction kinetics is affected by reductant type, surface area, pH, the surface site density, and the surface charge. FeS/FeS$_2$-mediated reductive dechlorination may be an important transformation pathway in natural systems.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.192-198
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• 2006

The nanostructured cerium oxide powders were synthesized by spray thermal decomposition process for the use as the raw materials of resistive oxygen sensor. The synthesis routes consisted of 1) spray drying of water based organic solution made from cerium nitrate hydrate ($Ce(NO_3){_3}6H_2O$) and 2) heat treatment of spray dried precursor powders at $400^{\circ}C$ in air atmosphere to remove the volatile components and identically to oxidize the cerium component. The produced powders have shown the loose structure agglomerated with extremely fine cerium oxide particles with about 15 nm and very high specific surface area ($110m^2/g$). The oxygen sensitivity, n ($Log{\propto}Log (P_{O2}/P^o)^{-n}$ and the response time, $t_{90}$ measured at $600^{\circ}C$ in the sample sintered at $1000^{\circ}C$, were about 0.25 and 3 seconds, respectively, which had much higher performances than those known in micron or $100{\sim}200nm$ sized sensors.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.233-233
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• 2006

[ $Y_{2}O_{2}S:Eu$ ], a red phosphor, coated with silica nanoparticles or nanocomposites composed of silica nanoparticles and polymeric materials such as PMMA and PVP was prepared via sol-gel process. Samples were prepared from four different methods coded P1, P2, P3, and P4. P1 includes a conventional sol-gel process and a dip-coating method while P2 has the same procedure with P1 except that nanocomposites containing both silica nanoparticles and polymer prepared by sol-gel process were used as coating materials. In P3 method, phosphors were dispersed in a solution containing silica precursor, i.e., TEOS and then polymerization was performed to coat onto the phosphors surface while P4 followed the same procedure with P3 except that a solution containing both TEOS and organic monomer were used in preparing coating materials. Among various coating methods examined in this study, uniform coating of phosphor could be achieved by using method P4, i.e., phosphor surface coating in a solution containing hydrophobic monomer and TEOS. Furthermore, $Y_{2}O_{2}S:Eu$ red phosphor coated with nanocomposite composed of PMMA matrix and silica nanoparticles exhibited enhanced PL intensity and long-term stability.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.309-312
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• 2003

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.27-33
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• 2000

The selective chemical vapor deposition techniques for Cu metallization were studied. For enhancing the selectivity, furnace annealing and N$_{2}$ plasma were treated on patterned TiN/BPSG prior to the copper deposition. As a result, Cu did not deposited lead to suppressing the nucleation on BPSG singificantly. With the increasement the plasma treatment temperature, copper nucleation on BPSG was suppressed mote effectively, From TOF-SIMS(Time-of-Flight Secondary ion Mass Spectrometry), it is considered that annealing and N$_{2}$ plasma treatment remove hydroxyl(0-H) group so that eliminating the nucleation site for copper precursor enhance the selectivity.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.31-35
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• 2014

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.957-962
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• 2003

The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.