• 제목/요약/키워드: Organic nanowires

검색결과 52건 처리시간 0.033초

Development of Polymeric Layer for Enhancing The Adhesion of Nano-devices Fabricated by The Nanotransfer Molding Method

  • 이기석;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.634-634
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    • 2013
  • Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

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Characterization of InSbTe nanowires grown directly by MOCVD for high density PRAM application

  • Ahn, Jun-Ku;Park, Kyoung-Woo;Jung, Hyun-June;Park, Yeon-Woong;Hur, Sung-Gi;Yoon, Soon-Gil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.23-23
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    • 2009
  • Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

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Direct printing of organic single crystal nanowire arrays by using Liquid-bridge-mediated nanotransfer molding

  • Oh, Hyun-S.;Baek, Jang-Mi;Sung, Myung-M.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.473-473
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    • 2011
  • In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

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Capillarity-Driven Self-Assembly of Silver Nanowires-Coated Fibers for Flexible and Stretchable Conductor

  • Li, Yi;Chen, Jun;Han, Xiao;Li, Yinghui;Zhang, Ziqiang;Ma, Yanwen
    • Nano
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    • 제13권12호
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    • pp.1850146.1-1850146.9
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    • 2018
  • The rapid development of smart textiles requires the large-scale fabrication of conductive fibers. In this study, we develop a simple, scalable and low-cost capillary-driven self-assembly method to prepare conductive fibers with uniform morphology, high conductivity and good mechanical strength. Fiber-shaped flexible and stretchable conductors are obtained by coating highly conductive and flexible silver nanowires (Ag NWs) on the surfaces of yarn and PDMS fibers through evaporation-induced flow and capillary-driven self-assembly, which is proven by the in situ optical microscopic observation. The density of Ag NWs and linear resistance of the conductive fibers could be regulated by tuning the assembly cycles. A linear resistance of $1.4{\Omega}/cm$ could be achieved for the Ag NWs-coated nylon, which increases only 8% after 200 bending cycle, demonstrating high flexibility and mechanical stability. The flexible and stretchable conductive fibers have great potential for the application in wearable devices.

MOCVD를 이용한 금속 촉매 종류에 따른 β-Ga2O3 나노 와이어의 제작과 특성 (Catalytic synthesis and properties of β-Ga2O3 nanowires by metal organic chemical vapor deposition)

  • 이승현;이서영;정용호;이효종;안형수;양민
    • 한국결정성장학회지
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    • 제27권1호
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    • pp.1-8
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    • 2017
  • Metal organic chemical vapor deposition(MOCVD) 방법을 이용하여 금속 촉매에 따른 ${\beta}-Ga_2O_3$ 나노 와이어의 제작과 특성에 대해 연구하였다. 본 연구의 성장 조건에서 ${\beta}-Ga_2O_3$ 나노 와이어의 성장이 가능한 금속 촉매는 Au, Cu 그리고 Ni이 있었으며 각 금속 촉매로 성장한 나노 와이어는 성장률과 형상에 많은 차이가 있었다. Ni 촉매 성장의 경우에는 Vapor-Solid(VS) 과정이 ${\beta}-Ga_2O_3$ 나노 와이어 성장의 주된 메커니즘이고 Au, Cu 촉매 성장의 경우에는 Vapor-Liquid-Solid(VLS) 과정이 주된 성장 메커니즘 임을 확인할 수 있었다. 또한, 촉매의 종류에 따라서 ${\beta}-Ga_2O_3$ 나노 와이어의 광학적 특성도 다르게 나타나는 것을 확인할 수 있었다. 반면, 동일한 성장 조건에서 Ti, Ag 그리고 Sn 금속은 나노 와이어 성장을 위한 촉매로 작용하지 못하였다. 본 연구에서는 금속 촉매에 따른 나노 와이어의 성장 가능 여부와 성장한 나노 와이어의 특성 변화가 금속 촉매의 녹는 점, 금속- Ga의 공융 점과 관련이 있음을 상태도와 연관 지어 밝혀내었다.

Single-Crystal Poly(3,4-ethylenedioxythiopene) Nanowires as Electrodes for Field-Effect Transistors

  • 조보람;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.637-637
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    • 2013
  • We develop single-crystal poly(3,4-ethylenedioxythiopene nanowires using liquid-bridge-mediated nanotransfer printing via vapor phase polymerization. This direct printing method can simultaneously enable the synthesis, alignment and patterning of the nanowires from molecular ink solutions. Twoor three-dimensional complex structures of various single-crystal organic nanowires were directly fabricated over a large area using many types of molecular inks. This method is capable of generating several optoelectronic devices. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. To demonstrate its usefulness, we used LB-nTM to fabricate nanowire field-effect transistors and arrays of 6,13-bis (triisopropyl- silylethynyl) pentacene (TIPS-PEN) nanowire field-effect transistors.

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Routes to Improving Performance of Solution-Processed Organic Thin Film Transistors

  • Li, Flora M.;Hsieh, Gen-Wen;Nathan, Arokia;Beecher, Paul;Wu, Yiliang;Ong, Beng S.;Milne, William I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1051-1054
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    • 2009
  • This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.

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Aspect ratio enhancement of ZnO nanowires using silicon microcavity

  • Kar, J.P.;Das, S.N.;Choi, J.H.;Lee, Y.A.;Lee, T.Y.;Myoung, J.M.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.34.1-34.1
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    • 2009
  • A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

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Selective Growth of Nanosphere Assisted Vertical Zinc Oxide Nanowires with Hydrothermal Method

  • Lee, Jin-Su;Nam, Sang-Hun;Yu, Jung-Hun;Yun, Sang-Ho;Boo, Jin-Hyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.252.2-252.2
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    • 2013
  • ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

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Synthesis of Vertically Aligned SiNW/Carbon Core-shell Nanostructures

  • 김준희;김민수;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.488.2-488.2
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    • 2014
  • Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

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